Transcript
polyfet rf devices
F1004
General Description
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
80 Watts Single Ended Package Style AT
TM
"Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation
Junction to Case Thermal Resistance
150 Watts
1.2 o C/W
Maximum Junction Temperature 200 o C
Storage Temperature
DC Drain Current
-65 o C to 150o C
8 A
RF CHARACTERISTICS ( SYMBOL
PARAMETER
Gps
Common Source Power Gai
η
Drain Efficiency
VSWR
MIN
TYP
Drain to Source Voltage
Gate to Source Voltage
70 V
30V
70 V
80WATTS OUTPUT ) MAX
13 60
Load Mismatch Toleranc
Drain to Gate Voltage
20:1
UNITS
TEST CONDITIONS
dB
Idq = 0.8 A, Vds = 28.0 V, F = 175 MHz
%
Idq = 0.8 A, Vds = 28.0 V, F = 175 MHz
Relative
Idq = 0.8 A, Vds = 28.0 V, F = 175 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL
PARAMETER
MIN
TYP
MAX
Bvdss
Drain Breakdown Voltag
65
Idss
Zero Bias Drain Curren
4
Igss
Gate Leakage Curren
Vgs
Gate Bias for Drain Curren
gM
Forward Transconductanc
Rdson
Saturation Resistanc
Idsat
Saturation Curren
Ciss
Common Source Input Capacitanc
Crss Coss
UNITS V
1
TEST CONDITIONS Ids =
0.2 A,
Vgs = 0V
mA
Vds = 28.0 V,
Vgs = 0V
1
uA
Vds = 0 V,
Vgs = 30V
7
V
Ids = 0.4 A,
Vgs = Vds
3.2
Mho
Vds = 10V, Vgs = 5V
0.35
Ohm
Vgs = 20V, Ids = 16 A
22
Amp
Vgs = 20V, Vds = 10V
132
pF
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Common Source Feedback Capacitanc
16
pF
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Common Source Output Capacitanc
80
pF
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:
[email protected] URL:www.polyfet.com
F1004 POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
F1004 POUT vs PIN Idq=0.8A F=100 Mhz Vds= 28v
F1B 4DIE CAPACITANCE
120
22
100
20
80
1000
18 Efficiency = 60%
60
Coss
16
Ciss
100 40
14
20
12
0
10 0
1
2
3
4
5
6
7
8
Crss
9 10
PIN IN WATTS
0 POUT
5
10
GAIN
15
20
25
30
VDS IN VOLTS
IV CURVE
ID AND GM VS VGS
F1B 4DIE IV CURVE
F1B 4 DIE GM & ID vs VGS
30
100
25
Id 20 10 15
10 1 5
Gm 0 0
2
4
6
8
10
12
14
16
18
20 0.1
Vds in Volts
0 Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
S11 AND S22 SMITH CHART
Vg = 10V
2
Vg = 12V
4
6
8
10
12
14
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:
[email protected] URL:www.polyfet.com
