Transcript
polyfet rf devices
F1014
General Description
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
20 Watts Single Ended Package Style AP
TM
"Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 80 Watts
Junction to Case Thermal Resistance
Maximum Junction Temperature
2.1 o C/W
200 o C
Storage Temperature
DC Drain Current
-65 o C to 150o C
4 A
RF CHARACTERISTICS ( SYMBOL
PARAMETER
Gps
Common Source Power Gai
η
Drain Efficiency
VSWR
MIN
TYP
Drain to Source Voltage
Gate to Source Voltage
70 V
30V
70 V
20WATTS OUTPUT ) MAX
12 60
Load Mismatch Toleranc
Drain to Gate Voltage
20:1
UNITS
TEST CONDITIONS
dB
Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz
%
Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz
Relative
Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL
PARAMETER
MIN
TYP
MAX
65
UNITS V
TEST CONDITIONS
Bvdss
Drain Breakdown Voltag
Idss
Zero Bias Drain Curren
2
Igss
Gate Leakage Curren
Vgs
Gate Bias for Drain Curren
gM
Forward Transconductanc
1.6
Mho
Vds = 10V, Vgs = 5V
Rdson
Saturation Resistanc
0.7
Ohm
Vgs = 20V, Ids = 8 A
Idsat
Saturation Curren
11
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
66
pF
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
8
pF
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
40
pF
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
1
0.1 A,
Vgs = 0V
mA
Vds = 28.0 V,
Vgs = 0V
1
uA
Vds = 0 V,
Vgs = 30V
7
V
Ids = 0.2 A,
Vgs = Vds
POLYFET RF DEVICES
Ids =
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:
[email protected] URL:www.polyfet.com
F1014 POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
F1014 POUT vs PIN Idq=0.4A F=400Mhz Vds=28v
F1B 2 DICE CAPACITANCE
40
14
1000
13.5
35
13
GAIN
30
12.5 25
100
12
20
Coss
Ciss
11.5 11
POUT
15
10.5 10 Efficiency = 48% 5
Crss
10
10 9.5
0
9 0
0.5
1
1.5
2
2.5
3
3.5
4 1
Pin in Watts
0 POUT
5
10
GAIN
15
20
25
30
VDS IN VOLTS
IV CURVE
ID AND GM VS VGS
F1B 2 DICE IV CURVE
F1B 2 DIE GM & ID vs VGS
12
100
10
8
Id
10 6
4 1 2
Gm
0 0
2
4
6
8
10
12
14
16
18
20 0.1
Vds in Volts
0 Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
S11 AND S22 SMITH CHART
Vg = 10V
2
Vg = 12V
4
6
8
10
12
14
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:
[email protected] URL:www.polyfet.com
