Transcript
polyfet rf devices
F1209
General Description
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
20 Watts Push - Pull Package Style AD
TM
"Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 80 Watts
Junction to Case Thermal Resistance
Maximum Junction Temperature
2.1 o C/W
200 o C
Storage Temperature
DC Drain Current
-65 o C to 150o C
4 A
RF CHARACTERISTICS ( SYMBOL
PARAMETER
Gps
Common Source Power Gai
η
Drain Efficiency
VSWR
MIN
TYP
Drain to Source Voltage
Gate to Source Voltage
50 V
30V
50 V
20WATTS OUTPUT ) MAX
10 60
Load Mismatch Toleranc
Drain to Gate Voltage
20:1
UNITS
TEST CONDITIONS
dB
Idq = 0.8 A, Vds = 12.5 V, F = 200 MHz
%
Idq = 0.8 A, Vds = 12.5 V, F = 200 MHz
Relative
Idq = 0.8 A, Vds = 12.5 V, F = 200 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL
PARAMETER
MIN
TYP
MAX
40
UNITS
TEST CONDITIONS
Bvdss
Drain Breakdown Voltag
Idss
Zero Bias Drain Curren
Igss
Gate Leakage Curren
Vgs
Gate Bias for Drain Curren
gM
Forward Transconductanc
0.8
Mho
Vds = 10V, Vgs = 5V
Rdson
Saturation Resistanc
0.7
Ohm
Vgs = 20V, Ids = 8 A
Idsat
Saturation Curren
7.5
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
40
pF
Vds = 12.5 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
6
pF
Vds = 12.5 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
30
pF
Vds = 12.5 V, Vgs = 0V, F = 1 MHz
1
V
Ids = 0.05 A,
Vgs = 0V
1
mA
Vds = 12.5 V,
Vgs = 0V
1
uA
Vds = 0 V,
Vgs = 30V
7
V
Ids = 0.1 A,
Vgs = Vds
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:
[email protected] URL:www.polyfet.com
F1209 POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE F1C 1DIE CAPACITANCE 100
Ciss
Coss
10
Crss
1 0
5
10
15
20
25
30
VDS IN VOLTS
IV CURVE
ID AND GM VS VGS
F1C 1DIE IV CURVE
F1C 1DIE GM & ID vs VGS
8
10
Id
7 6 5 4 1
3
Gm
2 1 0 0
2
4
6
8
10
12
14
16
18
20 0.1
Vds in Volts
0 Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
S11 AND S22 SMITH CHART
Vg = 10V
2
Vg = 12V
4
6
8
10
12
14
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:
[email protected] URL:www.polyfet.com
