Transcript
HAH1BV S/18
Introduction
Principle of HAH1BV Family
The HAH1BV family is for the electronic measurement of DC, AC or pulsed currents in high power automotive applications with galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit). The HAH1BV family gives you the choice of having different current measuring ranges in the same housing (from ± 200 A up to ± 900 A).
The open loop transducers uses Hall effect integrated circuit. The magnetic lux density B, contributing to the rise of the Hall voltage, is generated by the primary current IP to be measured. The current to be measured IP is supplied by a current source i.e. battery or generator (Fig. 1). Within the linear region of the hysteresis cycle, B is proportional to: B (IP) = constant (a) x IP
Features
The Hall voltage is thus expressed by:
Open Loop transducer using the Hall effect Unipolar + 5 V DC power supply Primary current measuring range up to ± 400 A Maximum RMS primary current limited by the busbar, the magnetic core or the ASIC temperature T° < + 150°C Operating temperature range: - 40°C < T° < + 125°C Output voltage: full ratiometric (in sensitivity and offset) Compact design.
VH= (RH/d) x I x constant (a) x IP Except for IP, all terms of this equation are constant. Therefore: VH = constant (b) x IP The measurement signal VH ampliied to supply the user output voltage or current.
Advantages Excellent accuracy Very good linearity
+Vc
Very low thermal offset drift Very low thermal sensitivity drift
IP Vout
Wide frequency bandwidth -Vc
No insertion losses.
0V
Automotive applications Battery monitoring Starter Generators Inverters HEV application EV application.
Primary current I P
Isolated output voltage
Fig. 1: Principle of the open loop transducer
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HAH1BV S/18 Dimensions HAH1BV family (in mm)
Bill of materials
System architecture (example)
Plastic case
PBT GF 30
Magnetic core
Iron silicon alloy
Pins
Brass gold plated
Mass
39 g
Remarks V VOUT > C when IP lows in the direction of the arrow. 2
RL > 10 kW optional resistor for signal line diagnostic VOUT
Diagnosis
Open circuit
VIN = VC
Short GND
VIN = OV
CL < 100 nF EMC protection RC Low pass ilter EMC protection (optional)
System architecture
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AUTOMOTIVE CURRENT TRANSDUCER HAH1BV S/18 Absolute maximum ratings Symbol
Unit
Speciication Min
Typ
Conditions
Max
Electrical Data Max primary current peak
IPmax
A
VC
V
1)
Supply continuous over voltage Supply over voltage
8.5
Reverse voltage
14 -14
Output over voltage (continuous)
VOUT
V
IOUT
mA
Output short-circuit duration
Tc
min
Rms voltage for AC isolation test
Vd
kV
Isolation resistance
RIS
MW
Electrostatic discharge voltage
VESD
kV
TS
°C
8.5
Output over voltage
14
Continuous output current
Ambient storage temperature
1 min 1 min @ TA = 25°C
-10
1 min @ TA = 25°C
10 2 2
50 Hz, 1 min
2
JESD22-A114-B
500 V - ISO 16750-2
500 -40
125
Operating characteristics Speciication
Symbol
Unit
IP
A
-400
400
Calibration current
ICAL
A
-400
400
Supply voltage
VC
V
4.5
Output voltage
VOUT
V
VOUT = (VC/5) X (2.5 + G X IP)
G
mV/A
5
mA
7
Min
Typ
Conditions
Max
Electrical Data Primary current
Sensitivity 2) Current consumption Power up inrush current
IC
mA
RL
ΚW
ROUT
W
Capacitive loading
CL
nF
1
Ambient operating temperature
TA
°C
-40
%
-1
Load resistance Output internal resistance
Output drift versus power supply
5.00
@ TA = 25°C
5.5 @ VC @ VC = 5 V 10
@ VC = 5 V, - 40°C < TA < 125°C
15
@ VC < 3.5 V
10 10 100 125 0.3
1
Performance Data Sensitivity error
εG
%
Electrical offset current
IOE
A
± 1.0
@ TA = 25°C, ‘@ VC = 5 V
Magnetic offset current
IOM
A
± 0.8
@ TA = 25°C, ‘@ VC = 5V after ± IP
Globale offset current
IO
A
TCVOE AV
mV/°C
-0.06
± 0.02
0.06
@ - 40°C < TA < 125°C
TCG AV
%/°C
-0.04
± 0.02
0.04
@ - 40°C < TA < 125°C
-1.0
Average temperature coeficient of VOE Average temperature coeficient of G
2)
1.0
± 1.8 -3.5
3.5
@ TA = 25°C, ‘@ VC = 5 V
@ TA = 25°C
Linearity error
εL
%
tr
ms
Frequency bandwidth
BW
Hz
Output clamping min voltage
Vsz
V
0.24
0.25
0.26
@ VC = 5 V
Vsz
V
4.74
4.75
4.76
@ VC = 5 V
Vno pp
mV
-
Output voltage noise peak peak
1)
± 0.5
Response time to 90 % of IPN step
Output clamping max voltage
Notes:
-1.0
1.0 5 80
of full range
@ di/dt = 50 A/µs @ -3 dB
10
Resolution
mV
2.5
Power up time
ms
25
Setting time after overload
ms
@ VC = 5 V 100 25
Busbar temperature must be below 150°C. The output voltage VOUT is fully ratiometric. The offset and sensitivity are dependent upon the supply voltage VC relative to the following formula:
VC 1 5 IP = VOUT − × × 2 G VC
with G in ( V / A )
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AUTOMOTIVE CURRENT TRANSDUCER HAH1BV S/18 HAH1BV S/18 Gain Error (%)
HAH1BV S/18 Electrical offset Error (A) 3
5 4
2
3 2
1
1 0
0 -1
-1
-2 -3
-2
-4 -5 -40
-20
20
0
40
60
80
-3 -40
120
100
-20
HAH1BV S/18 Frequency Bandwith
20
40
60
80
100
120
HAH1BV S/18 Phase
0
0
-1
-10 -20
-2
-30
Phase (°)
-3
Gain (dB)
0
Temperature (°C)
Temperature (°C)
-4 -5
-40 -50 -60
-6
-70
-7
-80 -90
-8 10
100
10
1000
100
1000
Frequency (Hz)
Frequency (Hz)
Typical Response Time (ms) di/dt = 100A/us 120
100
Ip (A)
80
60
40
20
0 -5
0
5
10
15
20
25
30
Time (ms)
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AUTOMOTIVE CURRENT TRANSDUCER HAH1BV S/18 PERFORMANCES PARAMETERS DEFINITIONS Sensitivity: Output noise voltage: The output voltage noise is the result of the noise loor of the The Transducer’s sensitivity G is the slope of the straight line Vout = f (IP), it must establish the relation: Hall elements and the linear IC ampliier gain. Vout (IP) = VC/5 (G x IP + 2.5) (*) Magnetic offset: (*) For all symetrics transducers. The magnetic offset is the consequence of an over-current on Offset with temperature: the primary side. It’s deined after an excursion of IP max. The error of the offset in the operating temperature is the variation Linearity: of the offset in the temperature considered with the initial offset The maximum positive or negative discrepancy with a reference at 25°C. straight line VOUT = f (IP). The offset variation IOT is a maximum variation the offset in the Unit: linearity (%) expressed with full scale of IP max. temperature range: Linearity is measured on cycle + IP, O, - IP, O, + IP without IOT = IOE max - IOE min magnetic offset (average values used) The Offset drift TCIOEAV is the IOT value divided by the temperature range. VOUT
Non linearity example
Reference straight line Max linearity error IP
Linearity variation in IN %
Sensitivity with temperature: The error of the sensitivity in the operating temperature is the relative variation of sensitivity with the temperature considered with the initial offset at 25°C. The sensitivity variation GT is the maximum variation (in ppm or %) of the sensitivity in the temperature range: GT = (Sensitivity max - Sensitivity min) / Sensitivity at 25°C. The sensitivity drift TCGAV is the GT value divided by the temperature range.
Offset voltage @ IP = 0 A: Is the output voltage when the primary current is null. The ideal value of VO is VC/2 at VC = 5 V. So, the difference of VO -VC/2 is called the total offset voltage error. This offset error can be Response time (delay time) tr: The time between the primary current signal and the output attributed to the electrical offset (due to the resolution of the ASIC quiescent voltage trimming), the magnetic offset, the thermal drift signal reach at 90 % of its inal value and the thermal hysteresis. I [A]
Environmental test speciications
IT
90 % IS
IP
Name
Standard
Damp heat, steady state
JESD22-A101
Isolation resistance
tr
ISO 16750-2 § 4.10
Conditions 85°C - 85°C / 1000h 500 V/1min
Temperature humidity cycle test
ISO 16750-4
-10 + 85°C 10 days
Isolation test
IEC 60664-1
2 kV/50 Hz/1min
Mechanical tests Vibration test (random)
t [µs]
Typical: Theorical value or usual accuracy recorded during the production.
IEC 60068-2-64 ISO 16750-3 & 4.1.6.1.6
20 … 2000 Hz Random rms (11g rms) 8h/axis
Terminal strength test
According to LEM
Thermal shocks
IEC 60068-214 Na
-40 + 125°C 300 cycles
Free fall
ISO 16750-3 § 4.3
1m concrete ground
Radiated electronagnetic immunity
Directive 2004/104/CE ISO 11452-2
30 V/m 20-2000 MHz
Bulk current injection immunity
Directive 2004/104/CE ISO 11452-4
1-400 MHz
EMC Test
Radiated radio frequency electromagnetic ield immunity
IEC 61000-4-3
80000 MHz-10V/m
Electrostatic discharge immunity test
IEC 61000-4-2
Air discharge=2 kV
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www.lem.com
