Transcript
Part num ber schem e
H package
H T 17 N 16 KNX
Gate Leads 20 AWG twisted pair Lenth 270 ~ 280 mm (10.5 ~ 11") Gate White | Cathode Red
1
20
2
3
4
5
6
1) Package designation 2) Thyristor designation (i.e. SCR) 3) Series number 4) Designates standard recovery time 5) Voltage Multiplier (example: 16 x 100 = 1600) 6) Proprietary suffix
Transparent view of gate pin terminal 1.47mm(0.058") DIA. Aux., Cathode terminal 6.2mm (0.245") L 4.9mm (0.195") W 0.8mm (0.030") H
Pa r t # H T1 7 N . . se r ie s I T( AVE) 1 6 5 0 V D RM V RRM 1 2 0 0 V ~ 1 8 0 0 V
Ph a se Con t r ol Th yr ist or
P WER Semiconductors Inc.
+5
74.7mm (2.94") DIA, Max.
Positioning pin hole 3.5 mm (0.140") DIA. 1.8mm (0.070") Deep one on each side
Features: X X X X X X
44.5mm (1.75") Max. 47mm (1.85") DIA both sides
26.1mm ~ 27.7mm (1.03" to 1.09")
Weight 525 g (18.5 oz).
All diffused silicone. Center amplifying gate. Standard recovery time for phase control applications. Disk press package (nick named, Hockey Puck) Metal and ceramic package construction. Double side cooling.
66mm (2.60") DIA. Max.
V olt a ge Pa ra m e t e r
Sym bol
Ra t ing
U nit s
Maximum Repetitive Off-State Voltage Notes: 1, 3, 4, 5, 6, 7 Maximum Repetitive Reverse Voltage Notes: 1, 3, 4, 5, 6 Maximum non repetitive Surge of Reverse Voltage Notes: 2, 3, 4, 5, 6 Critical rate of rising off-state Voltage, Linear to 80% of VDRM Note: 2
VDRM VRRM VRSM dv/dt
1200 ~ 1800 1200 ~ 1800 VRRM + 100 400
Volts Volts Volts V/ s
Note 1: TJ 25oC. Note 2: TJ 125oC. Note 5: VDRM and VRRM have IDRM, IRRM of up to 50mA.
Note 3: Measured at the peak of the sine wave, Note 6: VDR and VRR have typical IDR, IRR of 2~7mA.
Specifying voltage: 1200V, HT17N12
1800V, HT17N18 Above 1800V inquire for availability.
1400V, HT17N14 1600V, HT17N16
Note 4: Below 0oC derate VDRM and VRRM 10%. Note 7: For DC applications derate VDRM 45%.
Ga t e Pa ra m e t e r
Sym bol
Gate Trigger Voltage Note 3
VGT
Maximum Gate Trigger Current Notes 1,3 Minimum anode cathode Current to Latch on-state Notes 1, 5 Maximum permissible Gate Voltage not to Trigger Notes 1,3 Maximum permissible Gate Current not to Trigger Notes 1, 3 Maximum peak non repetitive Gate Voltage Notes 2, 3 Maximum Negative Gate Voltage Notes 2, 4 Maximum non repetitive Gate Current Notes 2, 3 Maximum Repetitive Gate Current Notes 2, 3 Average Gate Power (recommended) Note 2, 3 Note 1: TJ 25OC.
Ra t ing Temp. -20O C 25O C 125O C
Note 2: TJ 125OC.
Note 3: Rectangular pulse, tp [ 8.3 ms.
IGT IL VGDM IGDM VGM -VGM IGM IGRM PG(AVE)
Note 4: Rectangular -V DC pulse, tp [ 8.3 ms.
Volts
3
mA mA mV mA Volts Volts Amperes Amperes Watts
Note 5: Test conditions: I DC RL = 12 .
M a x im u m n on r e pe t it ive G ATE P OW ER ( P GM )
4
100
TJ -20C TJ 25C TJ 125C
RECOMMENDED POWER TO THE GATE 0.9 ~ 3 WATTS
3
TRIGGERING ZONE
2
1 TJ 125C TJ -20C AND 25C
VGD IGD 100
200
300
400
500
600
700
800
Instantaneous Gate Curent (mA)
900
1000
Instantaneous Gate Voltage ( V )
EXCESS POWER TO THE GATE
Instantaneous Gate Voltage ( V )
U nit s Max.
300 800 250 10 8.4 5 3.7 1 0.9 ~ 3
Ga t e Ch a r a t e r ist ics
0
Typ. 2.3 ~ 2.8 1.9 ~ 2.4 1.4 ~ 1.6
RECTANGULAR PULSE, TJ 125 C 1) ~ 8 ms 1) tp = 4 15 Watts 2) tp = 2 ms 30 Watts 3) tp = 1 ms 60 Watts 4) tp = 0.1 ~ 0.5 ms 100 Watts
10
3 1
1
4
2
10
100
Instantaneous Gate Current ( A )
This graph depicts a typical device, each device has unique characteristics
Tel: 760-931-9177
Fax: 760-438-0437
e-mail:
[email protected]
Page 1 of 2
P WER Semiconductors Inc.
H T1 7 N . . se r ie s
Cu r r e n t Pa ra m e t e r Maximum, Average, On state, Current Notes: 3, 4 Maximum, RMS, On state, Current Notes: 3, 4 Maximum non repetitive, Surge. On state, Current ,with no reverse voltage reapplied. Notes: 2, 4 Maximum non repetitive, Surge, On state, Current, with maximum reverse voltage reapplied. Notes: 2, 4 Critical rate of rising On-state Current, non repetitive Note: 6, 7 Holding Current Notes: 1, 5 IDR = Repetitive, Off-State, leakage Current (typical) Note: 1 IRR = Repetitive, Reverse, leakage Current. (typical) Note: 1 IDRM = Maximum (threshold), Repetitive, Off-State, Current. Note: 1 IRRM = Maximum (threshold), Repetitive, Reverse, Current. Note: 1 Fuse’s absolute maximum I 2 t with no reverse voltage reapplied
Note: 2, 4
Fuse’s absolute maximum I 2 t with up to 80% of VRRM reapplied Note: 2, 4
Reverse Recovery Charge (CS = Stored Charge)
Instantaneous On-State Voltage ( V )
Note 1: TJ 25OC. Note 2: TJ 125OC. Note 5: Test conditions: I DC RL = 12 .
Sym bol
Ra t ing
U nit s
IT(AVE) IT(RMS)
1650 2550
Amperes Amperes
ITSM 0%VRRM
28.5
kA
ITSM 100%VRRM
24
kA
di/dt IH
400 400
A/ s mA
IDR & IRR
2~7
mA
IDRM & IRRM
50
mA
I2 t, 0% VRR I2 t, [ 80% VRRM QRR
3400 2163
kA kA Cs
Consult factory Note 4: 180O conduction, 60Hz sine wave. Note 7: In addition to 0.2 F and 20 snubber circuit
Note 3: TCase 55OC, double side air cooled. Note 6: Switching from VDRM [ 1000V
O N - STATE V OLTAGE
2.5
( VT )
D ROP
TJ 125OC PULSE TEST
2.0 1.5 1.0
VTM
0.5
1000
100
10000
Instantaneous On-State Current ( A )
These graphs depict a typical device, each device has unique characteristics
M AXI M UM O N - STATE P OW ER D I SSI PATI ON
M AXI M UM O N - STATE P OW ER D I SSI PATI ON
3000
3000
Sinusoidal waveform, 60 Hz. Double side cooled Curves, Degrees On-state
2500 120 O O 60 O 90
2000 30 O
1500 1000
25%
2000 6%
1000
0 0
2000
500 1000 1500 AVERAGE ON-STATE CURRENT ( A )
M AXI M UM
PERM I SSI BLE
0
2000
500 1000 1500 AVERAGE ON-STATE CURRENT ( A )
CASE T EM PERATURE
M AXI M UM
PERM I SSI BLE
CASE T EM PERATURE
130 Sinusoidal waveform, 6030Hz. Double side cooled Curves, Degrees On-state
120 110 100
Degrees of On-state
90 80
30 60
70
O
90 O
60
120 O
180 O
50 500
1000 1500 AVERAGE ON-STATE CURRENT ( A )
2000
CASE TEMPERATURE ( C )
O
TC MEASURED AT AUX., CAHTODE CONNECTION
CASE TEMPERATURE ( C )
TC MEASURED AT AUX., CAHTODE CONNECTION
12.5%
1500
130
40 0
50% 33.3%
500
500
0
Rectangular waveform, 60 Hz. Double side cooled Curves, Degrees On-state
180 O
POWER DISSIPATION ( W )
POWER DISSIPATION ( W )
2500
120 110 100 90 80 70
Rectangular waveform, 60 Hz. Double side cooled Curves, Percent of On-state 100 t =% T Duty Cycle Formula
60 50
12%
25%
33% 50%
t
40 0
T
500
1000 1500 AVERAGE ON-STATE CURRENT ( A )
Th e r m a l & M e ch a n ica l Pa ra m e t e r Operating Temperature Range Maximum Thermal resistance, Junction to Case Notes:1, 3, 5 Maximum Thermal resistance, Case to Heat Sink Notes: 1, 2, 3, 4, 5
Sym bol
Ra t ing
TJ Rth-J-C Rth-C-hs
-40O ~ 125O 0.025 0.01 2500 ~ 2700 5500 ~ 6000
Mounting Pressure Note 1: Recommended mounting pressure applied Note 4: Case Temperature measured at aux., cathode
Tel: 760-931-9177
Note 2: Mounting surfaces flat and greased Note 5: 180O on-state
Fax: 760-438-0437
U nit s O
Celsius O C/W O C/W kg lb.
Note 3: Double side cooled
e-mail:
[email protected]
Page 2 of 2
2000
