Datasheet For Irf830p-hf-3tb By Advanced Power Electronics Corp. Usa

Transcript

Advanced Power Electronics Corp. IRF830P-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Low On-resistance Fast Switching Performance G RoHS-compliant, Halogen-free BV DSS 500V RDS(ON) 1.5Ω ID 4.5A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The IRF830P-3 is in the TO-220 through-hole package which is widely used in commercial and industrial applications where a small PCB footprint or an attached heatsink is required. This device is well suited for low voltage applications such as DC/DC converters and DC motor drives. G D S TO-220 (P) Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID at TC=25°C Continuous Drain Current ID at TC=100°C Continuous Drain Current 3 1 IDM Pulsed Drain Current PD at TC=25°C Total Power Dissipation Linear Derating Factor 2 Rating Units 500 V +20 V 4.5 A 2.8 A 18 A 74 W 0.59 W/°C 101 mJ 4.5 A EAS Single Pulse Avalanche Energy IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 °C TJ Operating Junction Temperature Range -55 to 150 °C Thermal Data Parameter Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 1.7 °C/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 °C/W Ordering Information IRF830P-3TB ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com RoHS-compliant TO-220, shipped in tubes 200704202-3 1/5 Advanced Power Electronics Corp. IRF830P-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 500 - - V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2.7A - - 1.5 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=2.7A - 2.4 - S VDS=500V, VGS=0V - - 25 uA Drain-Source Leakage Current (Tj=125 C) VDS=400V, VGS=0V - - 250 uA Gate-Source Leakage VGS=±20V - - ±100 nA ID=3.1A - 28 45 nC o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=400V - 4 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 16 - nC 3 td(on) Turn-on Delay Time VDD=250V - 10 - ns tr Rise Time ID=3.1A - 15 - ns td(off) Turn-off Delay Time RG=12Ω, VGS=10V - 41 - ns tf Fall Time RD=80.6Ω - 20 - ns Ciss Input Capacitance VGS=0V - 710 1140 pF Coss Output Capacitance VDS=25V - 170 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF Rg Gate Resistance f=1.0MHz - 2 3.0 Ω Min. Typ. Tj=25°C, IS=4.5A, VGS=0V - - 1.5 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 3 Test Conditions Max. Units trr Reverse Recovery Time IS=3.1A,VGS=0V, - 370 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 3.9 - uC Notes: 1.Pulse width limited by maximum junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 2/5 Advanced Power Electronics Corp. IRF830P-HF-3 Typical Electrical Characteristics 8 5 4 10V 7 .0V 6 .0V 3 5 .0 V o T C =25 C ID , Drain Current (A) 6 ID , Drain Current (A) T C =150 o C 10V 7.0V 6.0V 4 2 V G = 4. 5 V 5.0V 2 1 V G =4.5V 0 0 0 4 8 12 16 0 20 V DS , Drain-to-Source Voltage (V) 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3 1.2 1.1 Normalized RDS(ON) Normalized BVDSS (V) I D =2.7A V G =10V 1 2 1 0.9 0 0.8 -50 0 50 100 -50 150 T j , Junction Temperature ( o C) 0 50 100 150 T j , Junction Temperature ( o C ) Fig 3. Normalised BVDSS vs. Junction Temperature Fig 4. Normalized On-Resistance vs. Junction Temperature 10 1.4 1.2 o Normalized VGS(th) (V) 8 o T j = 150 C T j = 25 C IS (A) 6 4 1 0.8 0.6 2 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage vs. Junction Temperature 3/5 Advanced Power Electronics Corp. IRF830P-HF-3 Typical Electrical Characteristics (cont.) f=1.0MHz 10000 12 I D =3.1A V DS =100V V DS =250V V DS =400V 8 1000 C iss C (pF) VGS , Gate to Source Voltage (V) 10 6 C oss 4 100 C rss 2 0 10 0 10 20 30 40 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 10 ID (A) 100us 1ms 1 o T c =25 C Single Pulse 10ms 100m 1s DC 0.1 1 10 100 1000 Normalized Thermal Response (Rthjc) 100 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area T 0.01 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveforms ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com Charge Q Fig 12. Gate Charge Waveform 4/5 Advanced Power Electronics Corp. IRF830P-HF-3 Package Dimensions: TO-220 E A E1 SYMBOLS φ Millimeters MIN L1 L5 c1 D1 D L4 4.40 4.60 4.80 b D c E 0.76 0.88 1.00 8.60 8.80 9.00 0.36 0.43 0.50 9.80 10.10 10.40 L4 14.70 15.00 15.30 L5 6.20 6.40 6.60 5.10 REF. c1 1.25 1.35 1.45 b1 1.17 1.32 1.47 L 13.25 13.75 14.25 e L MAX A D1 b1 NOM 2.54 REF. L1 2.60 2.75 2.89 φ E1 3.71 3.84 3.96 7.4 REF, 1. All dimensions are in millimeters. 2. Dimensions do not include mold protrusions. b c e Marking Information: Product: IRF830P-HF-3 IRF830 YWWSSS ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com Date/lot code (YWWSSS) Y: Last digit of the year WW: Work week SSS: Lot code sequence 5/5