Transcript
PD - 91305C
IRFZ46NS IRFZ46NL Advanced Process Technology l Surface Mount (IRFZ46NS) l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
HEXFET® Power MOSFET
l
D
VDSS = 55V RDS(on) = 0.0165Ω
G
ID = 53A
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
S
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ46NL) is available for lowprofile applications.
D 2 Pak
TO-262
Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max. 53
Units
37 180 3.8 107 0.71 ± 20 28 11 5.0 -55 to + 175
A W W W/°C V A mJ V/ns °C
300 (1.6mm from case )
Thermal Resistance Parameter RθJC RθJA
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Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
Max.
Units
1.4 40
°C/W
1 04/08/04
IRFZ46NS/IRFZ46NL Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance
Qg Qgs Qgd td(on) tr td(off) tf
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Min. 55 2.0 19
LS
Internal Source Inductance
Ciss Coss Crss EAS
Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Typ. 0.057 14 76 52 57
Max. Units Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID =1mA
.0165 Ω VGS =10V, ID = 28A 4.0 V VDS = VGS, ID = 250µA S VDS = 25V, ID = 28A
25 VDS = 55V, VGS = 0V µA 250 VDS = 44V, VGS = 0V, T J = 150°C 100 VGS = 20V nA -100 VGS = -20V 72 ID = 28A 11 nC VDS = 44V 26 VGS = 10V, See Fig. 6 and 13
VDD = 28V ID = 28A ns RG = 12Ω RD = 0.98Ω, See Fig. 10
Between lead, nH 7.5 and center of die contact 1696 VGS = 0V 407 pF VDS = 25V 110 = 1.0MHz, See Fig. 5
583 152 IAS = 28A, L = 389mH
Source-Drain Ratings and Characteristics IS I SM
V SD t rr Q rr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 53 showing the A G integral reverse 180 p-n junction diode. S 1.3 V TJ = 25°C, IS = 28A, VGS = 0V 67 101 ns TJ = 25°C, IF = 28A 208 312 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 389µH RG = 25Ω, IAS = 28A. (See Figure 12)
ISD ≤ 28A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Uses IRFZ46N data and test conditions. This is a typical value at device destruction and represents operation outside rated limits.
This is a calculated value limited to TJ = 175°C. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 39A.
** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
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IRFZ46NS/IRFZ46NL 1000
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
I , Drain-to-Source Current (A) D
I , Drain-to-Source Current (A) D
100
10
4.5V
20µs PULSE WIDTH TCJ = 25°C T 25°C
1 0.1
1
10
A
100
100
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
TJ = 25°C TJ = 175°C
10
V DS = 25V 20µs PULSE WIDTH 6
7
8
9
10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
A
100
Fig 2. Typical Output Characteristics
2.5
5
1
VDS , Drain-to-Source Voltage (V)
1000
1
20µs PULSE WIDTH TTCJ = 175°C
1 0.1
Fig 1. Typical Output Characteristics
100
4.5V
10
VDS , Drain-to-Source Voltage (V)
4
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
TOP
TOP
A
I D = 46A
2.0
1.5
1.0
0.5
VGS = 10V
0.0 -60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance Vs. Temperature
3
IRFZ46NS/IRFZ46NL 2800
V GS , Gate-to-Source Voltage (V)
2400
C, Capacitance (pF)
20
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
V DS = 44V V DS = 28V
16
Ciss
2000
I D = 28A
12
1600
Coss 1200
800
Crss 400
0 10
4
FOR TEST CIRCUIT SEE FIGURE 13
0
A 1
8
0
100
VDS , Drain-to-Source Voltage (V)
20
30
40
50
A
60
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED BY R DS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
10
100
TJ = 175°C TJ = 25°C 10
VGS = 0V
1 0.4
0.8
1.2
1.6
2.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
4
A
2.4
10µs
100
100µs
10
1ms
10ms
TC = 25°C TJ = 175°C Single Pulse
1 1
A 10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFZ46NS/IRFZ46NL RD
VDS 60
VGS
D.U.T.
RG
Limited By Package
50
+
ID, Drain Current (A)
V-DD 10V
40
Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
30
Fig 10a. Switching Time Test Circuit 20 VDS 90%
10
0 25
50
75
100
125
150
175
T C , Case Temperature (°C)
10% VGS td(on)
Fig 9. Maximum Drain Current Vs. Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1 D = 0.50 0.20 0.10 0.1
PDM
0.05 0.02 0.01
0.01 0.00001
t1 SINGLE PULSE (THERMAL RESPONSE)
t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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L VDS D.U.T. RG
+ V - DD IAS
10 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD
E AS , Single Pulse Avalanche Energy (mJ)
IRFZ46NS/IRFZ46NL 500
TOP BOTTOM
400
ID 11A 20A 28A
300
200
100
0
VDD = 25V 25
50
A 75
100
125
150
175
Starting TJ , Junction Temperature (°C)
VDS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T.
50KΩ
QG
12V
.2µF .3µF
10 V QGS
+ V - DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
D.U.T.
QGD
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFZ46NS/IRFZ46NL Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
+
D.U.T
+
-
-
+
• • • •
RG
dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
Driver Gate Drive P.W.
Period
D=
+ -
V DD
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current
Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
Re-Applied Voltage
Body Diode
VDD
Forward Drop
Inductor Curent Ripple ≤ 5%
* VGS
ISD
= 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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IRFZ46NS/IRFZ46NL D2Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055) MAX.
-A-
1.32 (.052) 1.22 (.048)
2
1.78 (.070) 1.27 (.050)
1
10.16 (.400) REF.
-B-
4.69 (.185) 4.20 (.165)
6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580)
3
2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091)
5.28 (.208) 4.78 (.188) 1.40 (.055) 1.14 (.045)
3X
3X 5.08 (.200)
0.55 (.022) 0.46 (.018)
0.93 (.037) 0.69 (.027) 0.25 (.010)
M
8.89 (.350) REF.
1.39 (.055) 1.14 (.045)
B A M
MINIMUM RECOMMENDED FOOTPRINT 11.43 (.450)
NOTES: 1 2 3 4
DIMENSIONS AFTER SOLDER DIP. DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. CONTROLLING DIMENSION : INCH. HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE
8.89 (.350) 17.78 (.700)
3.81 (.150) 2.08 (.082) 2X
2.54 (.100) 2X
Part Marking Information D2Pak
INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE
8
A
PART NUMBER F530S 9246 9B 1M
DATE CODE (YYWW) YY = YEAR WW = WEEK www.irf.com
( ' 2 & ( 7$ '
/ $ 1 ,2 7$ 1 5 ( 7 ,1
/ / 5 , 1 $ ,6 6 , + 7 ( /3 0 $ ; (
( ' 2 & 7 2 /
5 ( ,) ,7 & ( 5
: : 1 2 ' ( / % 0 ( 6 6 $
2 * 2 /
5 $ ( <
/< % 0 ( 6 6 $
. ( ( :
& ( ,/1
( ' 2 & 7 /2
& ( 1 ,/ < / % 0 ( 6 6 $ ( + 7 ,1
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TO-262 Part Marking Information
3- EMITTER
2- COLLECTOR
IGBT
Dimensions are shown in millimeters (inches)
TO-262 Package Outline
1- GATE
9
IRFZ46NS/IRFZ46NL
5 ( % 0 8 1 7 5 $ 3
IRFZ46NS/IRFZ46NL Tape & Reel Information D2Pak TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.60 (.063) 1.50 (.059)
11.60 (.457) 11.40 (.449)
1.65 (.065)
0.368 (.0145) 0.342 (.0135)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL 10.90 (.429) 10.70 (.421)
1.75 (.069) 1.25 (.049)
4.72 (.136) 4.52 (.178)
16.10 (.634) 15.90 (.626)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941) 4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 4/04
10
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
