Transcript
PD - 91433C
IRHNA9160 JANSR2N7425U 100V, P-CHANNEL
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
REF: MIL-PRF-19500/655 ®
™
RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA9160 100K Rads (Si) IRHNA93160 300K Rads (Si)
RDS(on) 0.068Ω 0.068Ω
ID -38A -38A
QPL Part Number JANSR2N7425U JANSF2N7425U
International Rectifier’s RADHard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
SMD-2
Features: n n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG
Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range PCKG Mounting Surface Temp. Weight
Units -38 -24 -152 300 2.4 ±20 500 -38 30 -17
A W W/°C
V mJ A mJ V/ns
-55 to 150 o
C
300 (for 5s) 3.3(typical)
g
For footnotes refer to the last page
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1 02/20/03
IRHNA9160, JANSR2N7425U
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) BVDSS ∆BVDSS/∆TJ
Parameter
Min
Drain-to-Source Breakdown Voltage
-100
Typ Max Units —
—
V
VGS = 0V, ID =-1.0mA
—
-0.11
—
V/°C
Reference to 25°C, ID = -1.0mA
VGS(th) g fs IDSS
Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
— — — — — — — — — —
— — — — — — — — — 4.0
-100 100 290 72 90 35 170 190 190 —
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
— — —
6000 1500 400
— — —
— — -2.0 15 — —
— 0.068 — 0.071 Ω — -4.0 V — — S( ) — -25 µA — -250
VGS = -12V, ID = -24A➃ VGS = -12V, ID = -38A➃ VDS = VGS, ID = -1.0mA VDS >-15V, IDS = -24A ➃ VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS =-12V, ID = -38A VDS = -50V
Ω
RDS(on)
Test Conditions
nA nC
VDD = -50V, ID = -38A, VGS =-12V, RG = 2.35Ω
ns
nH
Measured from the center of drain pad to center of source pad
pF
VGS = 0V, VDS = -25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics Parameter
Min Typ Max Units
IS ISM
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀
— —
— —
-38 -152
A
VSD t rr QRR
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
— — —
— — —
-3.3 300 2.1
V nS µC
t on
Forward Turn-On Time
Test Conditions
Tj = 25°C, IS = -38A, VGS = 0V ➃ Tj = 25°C, IF = -38A, di/dt ≤ -100A/µs VDD ≤ -50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance Parameter RthJC RthJ-PCB
Junction-to-Case Junction-to-PC board
Min Typ Max — —
— 1.6
0.42 —
Units °C/W
Test Conditions soldered to a 1”square copper-clad board
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHNA9160, JANSR2N7425U
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD
100K Rads(Si)1
Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (SMD-2) Diode Forward Voltage ➃
Min
Max
-100 -2.0 — — — —
300 K Rads (Si)2
Units
Test Conditions
Min
Max
— -4.0 -100 100 -25 0.069
-100 -2.0 — — — —
— -5.0 -100 100 -25 0.069
V
µA Ω
VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS=-80V, VGS =0V VGS = -12V, ID =-24A
—
0.068
—
0.068
Ω
VGS = -12V, ID =-24A
—
-3.3
—
- 3.3
V
VGS = 0V, IS = -38A
nA
1. Part number IRHNA9160 (JANSR2N7425U) 2. Part numbers IRHNA93160 (JANSF2N7425U)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area Ion Br I Cu
LET MeV/(mg/cm2)) 36.8 59.8 28
Energy (MeV) 305 343 285
VDS (V)
Range (µm) @VGS=0V @VGS=5V 39 -100 -100 32.6 -60 — 43 -100 -100
@VGS=10V -70 — -100
@VGS=15V -50 — -70
@V GS=20V -40 — -60
-120 -100 VDS
-80
Cu Br I
-60 -40 -20 0 0
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page
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IRHNA9160, JANSR2N7425U
1000
Pre-Irradiation
1000
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
100
-5.0V 20µs PULSE WIDTH T = 25 C
10 1
100
-5.0V
10
1
100
2.5
TJ = 150 ° C
V DS = -50V 20µs PULSE WIDTH
8
9
10
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
11
R DS(on) , Drain-to-Source On Resistance (Normalized)
-I D , Drain-to-Source Current (A)
TJ = 25 ° C
7
10
100
Fig 2. Typical Output Characteristics
1000
6
°
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
J
10
-VDS , Drain-to-Source Voltage (V)
100
20µs PULSE WIDTH T = 150 C
°
J
5
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
TOP
ID = -38A
2.0
1.5
1.0
0.5
0.0 -60 -40 -20
VGS = -10V 0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance Vs.Temperature
Pre-Irradiation
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
8000
C iss
6000
4000
C oss
2000
20
-VGS , Gate-to-Source Voltage (V)
10000
ID = -38 A
16
VDS =-80V VDS =-50V VDS =-20V
12
8
4
Crss
FOR TEST CIRCUIT SEE FIGURE 13
0
0 1
10
0
100
50
100
150
200
250
300
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED BY R DS(on)
100
TJ = 150 ° C
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
C, Capacitance (pF)
IRHNA9160, JANSR2N7425U
TJ = 25 ° C 10
1
0.1 0.0
V GS = 0 V 1.0
2.0
3.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
4.0
100
100us
1ms 10
10ms
1
TC = 25 °C TJ = 150 ° C Single Pulse
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
1000
IRHNA9160, JANSR2N7425U
Pre-Irradiation
40
VGS
-I D , Drain Current (A)
RD
VDS
D.U.T.
RG
30
+
V DD
VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit 10 td(on)
tr
t d(off)
tf
VGS 10%
0 25
50
75
100
125
150
TC , Case Temperature ( ° C) 90% VDS
Fig 9. Maximum Drain Current Vs. CaseTemperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50 0.1
0.01
0.001 0.00001
0.20 0.10
0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
P DM
t1
t2
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHNA9160, JANSR2N7425U
L
VDS
D .U .T
RG
V0GS -2 V tp
VD D A
IA S
D R IV E R 0 .0 1 Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
EAS , Single Pulse Avalanche Energy (mJ)
1200
ID
TOP
1000
BOTTOM
-17A - 24A -38A
800
600
400
200
0 25
50
75
100
125
150
Starting T J , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T.
50KΩ
QG
-12V 12V
.2µF .3µF
-12V QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRHNA9160, JANSR2N7425U
Pre-Irradiation
Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = -25V, starting TJ = 25°C, L= 0.7mH Peak IL = -38A, VGS = -12V ➂ ISD ≤ -38A, di/dt ≤ -385A/µs, VDD ≤ -100V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/03
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