Transcript
HiPerFASTTM IGBT
IXGH IXGK IXGT IXGJ
50N60B 50N60B 50N60B 50N60B
VCES IC25
= 600 = 75 = 2.3
VCE(sat) tfi(typ) = 120
V A V ns
TO-247 AD (IXGH)
Symbol
Test Conditions
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
75
A
IC90
TC = 90°C
50
A
ICM
TC = 25°C, 1 ms
200
A
SSOA (RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load
ICM = 100 @ 0.8 VCES
A
PC
TC = 25°C
300
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
Mounting torque
TO-247AD TO-264
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight
Symbol
C (TAB)
E
TO-268 (D3) ( IXGT)
G
C (TAB) E
TJ
Md
C
Maximum Ratings
6 10 4
IC
= 250µA, VGE = 0 V
600
VGE(th)
IC
= 250 µA, VCE = VGE
2.5
ICES
VCE = 0.8 • VCES VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
= IC90, VGE = 15 V
© 2002 IXYS All rights reserved
g g g
Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVCES
TJ = 25°C TJ = 125°C
G C E (TAB)
TO-264 AA (IXGK)
G C
°C
300 TO-247 TO-264 TO-268
Test Conditions
1.13/10 Nm/lb.in. 0.9/6 Nm/lb.in.
TO-268 Leaded (IXGJ)
V 5.0
V
200 1
µA mA
±100
nA
2.3
V
G = Gate E = Emitter
E
C (TAB) D = Drain TAB = Collector
Features • International standard packages • High frequency IGBT • Latest generation HDMOSTM process • High current handling capability • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies Advantages • Easy to mount with 1 screw (insulated mounting screw hole) • Switching speed for high frequency applications • High power density 95585F(12/02)
IXGH 50N60B IXGK 50N60B IXGJ 50N60B IXGT 50N60B Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. m a x .
gfs
IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
25
4100 VCE = 25 V, VGE = 0 V, f = 1 MHz
QG
pF
95
pF
160
nC
30
nC
55
nC
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
QGC td(on)
Inductive load, TJ = 25°°C
50
ns
tri
IC = IC90, VGE = 15 V VCE = 0.8 • VCES, RG = Roff = 2.7 Ω
50
ns
td(off) tfi Eoff td(on) tri
Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG
td(off) tfi Eoff
Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG
Dim.
Millimeter Min. Max.
Inches Min. Max.
A A1 A2
4.7 2.2 2.2
5.3 2.54 2.6
.185 .087 .059
.209 .102 .098
b b1 b2
1.0 1.65 2.87
1.4 2.13 3.12
.040 .065 .113
.055 .084 .123
C D E
.4 20.80 15.75
.8 21.46 16.26
.016 .819 .610
.031 .845 .640
120
250
ns
3.0
4.5
mJ
e L L1
5.20 19.81
5.72 20.32 4.50
0.205 .780
0.225 .800 .177
∅P Q
3.55 5.89
3.65 6.40
.140 0.232
.144 0.252
R S
4.32 6.15
5.49 BSC
.170 242
.216 BSC
50
ns
50
ns
3
mJ
200
ns
250
ns
4.2
mJ
RthJC RthCK
ns
Terminals: 1 - Gate 2 -Collector 3 -Emitter Tab-Collector
250
Inductive load, TJ = 125°°C VCE = 0.8 • VCES, RG = Roff = 2.7 Ω
3
150
IC = IC90, VGE = 15 V
Eon
2
pF
310
Cres
QGE
S 1
Cies Coes
42
TO-247 AD (IXGH) Outline
TO-264 AA (IXGK) Outline
0.42 K/W TO-247 & TO-268 leaded packages TO-264 package
TO-268 (IXGT) Outline
0.25 0.15
K/W K/W
TO-268 (IXGJ) Leaded Outline
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
Terminals: 1 - Gate 2Collector
Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83
Min.
Inches Max.
.190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,850,072
4,881,106 4,931,844
5,017,508 5,034,796
5,049,961 5,063,307
5,187,117 5,237,481
5,486,715 5,381,025
6,306,728B1
IXGH 50N60B IXGK 50N60B IXGJ 50N60B IXGT 50N60B Figure 1. Saturation Voltage Characteristics
Figure 2. Extended Output Characteristics
100
200
VGE = 15V 13V 11V 9V
IC - Amperes
80
TJ = 25°C
7V
60 40
11V
VGE = 15V 13V
160
IC - Amperes
TJ = 25°C
9V
120 7V
80
20
40 5V
5V
0
0
0
1
2
3
4
5
0
2
4
VCE - Volts
8
VCE - Volts
Figure 4. Temperature Dependence of VCE(sat)
100
1.6 TJ = 125°C V = 15V GE 13V 11V
VGE = 15V
VCE (sat) - Normalized
9V
7V
60 40
5V
20 0 0
1
2
3
4
1.2 IC = 50A
1.0 IC = 25A
0.8 0.6 0.4 25
5
IC = 100A
1.4
50
75
VCE - Volts
100
125
150
TJ - Degrees C
Figure 5. Admittance Curves
Figure 6. Capacitance Curves 10000
100
f = 1Mhz
VCE = 10V Ciss
Capacitance - pF
80 IC - Amperes
10
Figure 3. Saturation Voltage Characteristics
80
IC - Amperes
6
60 40 TJ = 25°C
TJ = 125°C
1000
Coss
100
Crss
20 10
0 0
2
4
6
VGE - Volts
© 2002 IXYS All rights reserved
8
10
0
5
10
15
20
25
VCE-Volts
30
35
40
IXGH 50N60B IXGK 50N60B IXGJ 50N60B IXGT 50N60B Figure 7. Dependence of EON and EOFF on IC 6
12 E(ON)
5
6
10 8
E(OFF)
3
6
2
4
1
E(ON)
4
8 E(ON)
3
6
20
40
60
80
4
E(OFF)
2 E(ON)
0
E(OFF)
IC = 50A
2 1
2
0
10
E(OFF)
IC = 100A
IC =25A
0
0 100
E(OFF) - millijoules
4
E(OFF) - milliJoules
RG = 4.7Ω
12
TJ = 125°C
5
E(ON) - millijoules
TJ = 125°C
E(ON) - millijoules
Figure 8. Dependence of EON and EOFF on RG
0
0
10
20
30
40
50
60
RG - Ohms
IC - Amperes
Figure 9. Gate Charge
Figure 10. Turn-off Safe Operating Area 600
16 IC = 25A VCE = 250V
100
IC - Amperes
VGE - Volts
12
8
TJ = 125°C
10
RG = 6.2 Ω dV/dt < 5V/ns
1
4
0.1
0 0
40
80
120
160
0
200
100
200
300
400
500
600
VCE - Volts
Qg - nanocoulombs
Figure 11. IGBT Transient Thermal Resistance
ZthJC (K/W)
1
0.1
D=0.5 D=0.2
0.01
D=0.1 D=0.05 D=0.02
D = Duty Cycle
D=0.01 Single pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,850,072
4,881,106 4,931,844
5,017,508 5,034,796
5,049,961 5,063,307
5,187,117 5,237,481
5,486,715 5,381,025
6,306,728B1