Transcript
High-Gain IGBTs w/ Diode
VCES = 600V IC110 = 46A VCE(sat) ≤ 2.3V
IXGQ50N60C4D1 IXGH50N60C4D1
High-Speed PT Trench IGBTs TO-3P (IXGQ)
G C E
Symbol
Test Conditions
Maximum Ratings
VCES VCGR
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
600 600
V V
VGES VGEM
Continuous Transient
±20 ±30
V V
IC25 IC110 IF110 ICM
TC TC TC TC
90 46 18 220
A A A A
SSOA (RBSOA)
VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load
ICM = 72 VCE ≤ VCES
A
PC
TC = 25°C
= 25°C = 110°C = 110°C = 25°C, 1ms
TJ TJM Tstg TL TSOLD
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque
Weight
TO-3P TO-247
Tab
300
W
-55 ... +150 150 -55 ... +150
°C °C °C
300 260
°C °C
1.13/10
Nm/lb.in.
5.5 6.0
g g
TO-247 (IXGH)
G
C
Tab
E
G = Gate E = Emitter
C = Collector Tab = Collector
Features Optimized for Low Switching Losses Anti-Parallel Ultra Fast Diode Square RBSOA
Advantages Easy to Mount Space Savings
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified
Characteristic Values Min. Typ. Max.
BVCES
IC
= 250μA, VGE = 0V
600
VGE(th)
IC
= 250μA, VCE = VGE
4.0
ICES
VCE = VCES, VGE = 0V
6.5
VCE = 0V, VGE = ±20V
VCE(sat)
IC
= 36A, VGE = 15V, Note 1 TJ = 125°C
© 2011 IXYS CORPORATION, All Rights Reserved
V
50 μA 2.5 mA
TJ = 125°C IGES
Applications V
1.9 1.6
±100
nA
2.3
V V
Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Lamp Ballasts
DS100297D(10/11)
IXGQ50N60C4D1 IXGH50N60C4D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified)
gfs
Characteristic Values Min. Typ. Max.
IC = 36A, VCE = 10V, Note 1
20
Cies Coes Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg Qge Qgc
IC = IC110, VGE = 15V, VCE = 0.5 • VCES
td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff
Inductive Load, TJ = 25°C IC = 36A, VGE = 15V
VCE = 400V, RG = 10Ω Note 2
Inductive Load, TJ = 125°C IC = 36A, VGE = 15V
VCE = 400V, RG = 10Ω Note 2
RthJC RthCS
TO-3P Outline
30
S
1900 100 60
pF pF pF
113
nC
13
nC
44
nC
40 66 0.95 270 63 0.84
ns ns mJ ns ns mJ
1.55
30 45 1.10 210 96 0.90
ns ns mJ ns ns mJ
0.25
0.42 °C/W °C/W
1 = Gate 3 = Emitter
2,4
= Collector
TO-247 Outline
Reverse Diode (FRED) ∅P 1
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IRM trr
IF = 15A, VGE = 0V, Note 1 TJ = 150°C
1.6
TJ = 100°C IF = 15A, VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C VR = 100V IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V
100 25
RthJC
Notes:
2
3
Characteristic Values Min. Typ. Max. 2.7
V V
2.6
A ns ns
1.6 °C/W
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
e
Terminals: 1 - Gate 3 - Emitter
Dim.
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
2 - Collector
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106
4,931,844 5,017,508 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537
7,157,338B2
IXGQ50N60C4D1 IXGH50N60C4D1 Fig. 2. Extended Output Characteristics @ T J = 25ºC
Fig. 1. Output Characteristics @ T J = 25ºC 100 VGE = 15V 13V 11V 10V
90 80
VGE = 15V
300
14V 13V
250
9V
IC - Amperes
IC - Amperes
70 60 8V
50 40
12V
200
11V 150
10V 9V
100
30
8V
7V
20
50 10
7V
6V
0
6V
0 0
0.5
1
1.5
2
2.5
3
0
5
10
20
25
30
Fig. 4. Dependence of VCE(sat) on Junction Temperature
Fig. 3. Output Characteristics @ T J = 125ºC 100
1.3 VGE = 15V 13V 12V 11V 10V
80 70
1.2
VCE(sat) - Normalized
90
IC - Amperes
15
VCE - Volts
VCE - Volts
9V
60 50
8V 40 30
I
C
= 72A
I
C
= 36A
I
C
= 18A
1.1 1.0 0.9 0.8
7V
20
0.7
VGE = 15V
10 6V 0.6
0 0
0.5
1
1.5
2
2.5
-25
3
0
25
VCE - Volts
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance 160
4.5 TJ = 25ºC
140
4.0 120
IC - Amperes
VCE - Volts
3.5
3.0 I
C
= 72A
TJ = - 40ºC 25ºC
100 80
125ºC 60
2.5 36A 2.0
40
18A
20
1.5
0 6
7
8
9
10
11
12
VGE - Volts
© 2011 IXYS CORPORATION, All Rights Reserved
13
14
15
4.5
5
5.5
6
6.5
7
7.5
VGE - Volts
8
8.5
9
9.5
10
IXGQ50N60C4D1 IXGH50N60C4D1 Fig. 8. Gate Charge
Fig. 7. Transconductance 45
16
40 35
I C = 36A I G = 10mA
12
30
25ºC
VGE - Volts
g f s - Siemens
VCE = 300V
14
TJ = - 40ºC
25 125ºC 20
10 8 6
15 4
10
2
5 0
0 0
20
40
60
80
100
120
140
0
20
40
Fig. 9. Capacitance
80
100
120
Fig. 10. Reverse-Bias Safe Operating Area 80
10,000
f = 1 MHz
70 60 Cies
1,000
IC - Amperes
Capacitance - PicoFarads
60
QG - NanoCoulombs
IC - Amperes
Coes
50 40 30
100 20 Cres 10 10 0
5
10
15
20
25
30
35
40
0 100
TJ = 125ºC RG = 10Ω dv / dt < 10V / ns
150
200
250
VCE - Volts
300
350
400
450
500
550
600
650
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z (th)JC - ºC / W
1
0.1
0.01
0.001 0.00001
0.0001
0.001
0.01
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.1
1
IXGQ50N60C4D1 IXGH50N60C4D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 4.5
3.5
4.5 Eon -
Eoff
4
---
4
Eoff
3
TJ = 125ºC , VGE = 15V 3.5
3.5
3.5
VCE = 400V
Eon
---3
RG = 10Ω , VGE = 15V VCE = 400V
I C = 72A 2.5
2.5
2
2
1.5
1.5
Eoff - MilliJoules
3
2.5 TJ = 125ºC, 25ºC
2
2
1.5
1.5
1 I
1
C
= 36A
0.5
0.5
0 20
25
30
0.5
0
0 15
1
1
0.5
10
0 15
35
25
35
RG - Ohms
----
125
1.5
1.5
1
t f i - Nanoseconds
2
Eon - MilliJoules
2
500 450
VCE = 400V
120
400
115
350 I
C
= 72A
110
300 I
105
C = 36A
250
1 I C = 36A
0.5
0.5
0 25
35
45
55
65
75
85
95
105
115
0 125
100
200
95
150
90
100 10
15
20
150
td(off) - - - -
320
tfi
120
RG = 10Ω , VGE = 15V
70
200
50
160
30
120 35
45
55
IC - Amperes
© 2011 IXYS CORPORATION, All Rights Reserved
65
75
t f i - Nanoseconds
240 TJ = 25ºC, 125ºC
280
100
260
90
240 I C = 36A
80
I C = 72A
220
70
200
60
180
50 25
35
45
55
65
75
85
TJ - Degrees Centigrade
95
105
115
160 125
t d(off) - Nanoseconds
90
t d(off) - Nanoseconds
280
300
VCE = 400V
110
110
td(on) - - - -
RG = 10Ω , VGE = 15V
320
VCE = 400V
25
35
130
360
15
30
Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tfi
25
RG - Ohms
TJ - Degrees Centigrade
130
t d(off) - Nanoseconds
2.5 I C = 72A
td(off) - - - -
TJ = 125ºC, VGE = 15V
VCE = 400V
Eoff - MilliJoules
75
550
tfi
130
3
RG = 10Ω , VGE = 15V
2.5
t f i - Nanoseconds
65
135
3.5 Eon
55
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance
3.5 Eoff
45
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature
3
Eon - MilliJoules
3
Eon - MilliJoules
Eoff - MilliJoules
2.5
IXGQ50N60C4D1 IXGH50N60C4D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 160
td(on) - - - -
tri
80
td(on) - - - -
tri
120
80
TJ = 125ºC, VGE = 15V
70
RG = 10Ω , VGE = 15V VCE = 400V
100
60 I
C = 72A
80
50
60
40
100
60
80
50 TJ = 25ºC
60
40
40
30
t d(on) - Nanoseconds
70
t d(on) - Nanoseconds
VCE = 400V 120
t r i - Nanoseconds
140
t r i - Nanoseconds
140
90
TJ = 125ºC I 40
C
= 36A
20 10
15
20
25
30
30
20
20
0
20
10 15
35
25
35
45
55
65
75
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 160
56
140
RG = 10Ω , VGE = 15V VCE = 400V
120 100
I
C
52 48 44
= 72A
80
40
60
36
40
t d(on) - Nanoseconds
t r i - Nanoseconds
td(on) - - - -
tri
32
I C = 36A
20
28
0 25
35
45
55
65
75
85
95
105
115
24 125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_50N60C4(L5)03-23-11
IXGQ50N60C4D1 IXGH50N60C4D1 Fig. 22. Reverse Recovery Charge vs. - diF/dt
Fig. 21. Forward Voltage vs. Forward Current 40
Fig. 23. Peak Reverse Current vs. - diF/dt 40
1800
TJ = 100ºC
TJ = 100ºC
1600
35
20
TJ = 150ºC 100ºC
15
25ºC
30
I F = 30A
1200
IRM - Amperes
QR - NanoCoulombs
25
VR = 300V
35
1400
30
IF - Amperes
VR = 300V
1000 800 I
600
F
= 30A, 15A, 7.5A
25 15A
20 7.5A
15
10
10
400
5
5
200
0 0
0.5
1
1.5
2
0
0 100
2.5
0
1000
200
400
600
800
-diF/dt - A/µs
-diF/dt - A/µs
Fig. 24. Dynamic Parameter vs. Junction Temperature
Fig. 25. Reverse Recovery Time vs. - diF/dt
Fig. 26. Peak Forward Voltage & Forward Recovery Time vs. diF/dt
2
20
120
1.8 1.6
2
TJ = 100ºC
T J = 100ºC
VR = 300V
I F = 15A
110 15
1.5 VFR
1 I RM
0.8
100
VFR - Volts
1.2
I F = 30A
10
1
90
0.6 Qr
5
15A
80
0.4
0.5 tfr
7.5A
0.2
0
70
0 20
40
60
80
100
120
140
160
0
200
TJ - Degrees Centigrade
400
600
800
1000
Fig. 27. Maximum Transient Thermal Impedance (for Diode)
Z(th)JC - ºC / W
1
0.1
0.01
0.0001
0.001
0.01
Pulse Width - Second
© 2011 IXYS CORPORATION, All Rights Reserved
0.1
200
400
600
diF/dt - A/µs
-diF/dt - A/µs
10
0.001 0.00001
0
1
800
0 1000
t f r - Microseconds
t r r - Nanoseconds
1.4
KF
1000
VF - Volts
