Datasheet For Ka5ho365rydtu By Fairchild Semiconductors

Transcript

www.fairchildsemi.com K A5 x 0 3 x x -SERI ES K A5 H 0 3 6 5 R, K A5 M 0 3 6 5 R, K A5 L0 3 6 5 R K A5 H 0 3 8 0 R, K A5 M 0 3 8 0 R, K A5 L0 3 8 0 R Fa irchild Pow e r Sw it ch(FPS) Features Description • • • • • • • • • The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consists of a high voltage power SenseFET and a current mode PWM IC. Included PWM controller integrates the fixed frequency oscillator, the under voltage lock-out, the leading edge blanking, the optimized gate turn-on/turn-off driver, the thermal shutdown protection, the over voltage protection, and the temperature compensated precision current sources for the loop compensation and the fault protection circuitry. Compared to a discrete MOSFET and a PWM controller or an RCCsolution, a Fairchild Power Switch(FPS) can reduce the total component count, design size and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for the cost effective design in either a flyback converter or a forward converter Precision Fixed Operating Frequency (100/67/50kHz) Low Start-up Current(Typ. 100uA) Pulse by Pulse Current Limiting Over Current Protection Over Voltage Protection (Min. 25V) Internal Thermal Shutdown Function Under Voltage Lockout Internal High Voltage Sense FET Auto-Restart Mode Applications • • • SMPS for VCR, SVR, STB, DVD & DVCD SMPS for Printer, Facsimile & Scanner Adaptor for Camcorder TO-220F-4L 1 1. GND 2. Drain 3. VCC 4. FB Internal Block Diagram #3 VCC 32V 5V Vref Internal bias #2 DRAIN SFET Good logic OSC 9V 5A S 1mA R − #4 FB 2.5R 1R 0.1V − S Thermal S/D + 27V L.E.B + + 7.5V − Q R Q #1 GND Power on reset OVER VOLTAGE S/D Rev.1.0.7 ©2003 Fairchild Semiconductor Corporation KA5X03XX-SERIES Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Characteristic Symbol Value Unit VDGR 650 V VGS ±30 V KA5H0365R, KA5M0365R, KA5L0365R Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage (1) IDM 12.0 ADC Continuous Drain Current (TC=25°C) ID 3.0 ADC Continuous Drain Current (TC=100°C) ID 2.4 ADC EAS 358 mJ VCC,MAX 30 V VFB -0.3 to VSD V PD 75 W Derating 0.6 W/°C Operating Junction Temperature. TJ +150 °C Operating Ambient Temperature. TA -40 to +85 °C TSTG -55 to +150 °C VDGR 800 V VGS ±30 V IDM 12.0 ADC Continuous Drain Current (TC=25°C) ID 3.0 ADC Continuous Drain Current (TC=100°C) ID 2.1 ADC Drain Current Pulsed Single Pulsed Avalanche Energy (2) Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation Storage Temperature Range. KA5H0380R, KA5M0380R, KA5L0380R Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage Drain Current Pulsed (1) Single Pulsed Avalanche Energy Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation (2) EAS 95 mJ VCC,MAX 30 V VFB -0.3 to VSD V PD 75 W Derating 0.6 W/°C Operating Junction Temperature. TJ +150 °C Operating Ambient Temperature. TA -40 to +85 °C TSTG -55 to +150 °C Storage Temperature Range. Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L = 51mH, starting Tj = 25°C 3. L = 13H, starting Tj = 25°C 2 KA5X03XX-SERIES Electrical Characteristics (SenseFET Part) (Ta = 25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50A 650 - - V VDS=Max. Rating, VGS=0V - - 50 A Zero Gate Voltage Drain Current IDSS VDS=0.8Max. Rating, VGS=0V, TC=125°C - - 200 A RDS(ON) VGS=10V, ID=0.5A - 3.6 4.5 Ω gfs VDS=50V, ID=0.5A 2.0 - - S - 720 - KA5H0365R, KA5M0365R, KA5L0365R Static Drain-Source on Resistance (Note) Forward Transconductance (Note) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn On Delay Time td(on) Rise Time - 40 - - 40 - - 150 - - 100 - - 150 - - 42 - - - 34 - 7.3 - - 13.3 - 800 - - V VDS=Max. Rating, VGS=0V - - 250 A VDS=0.8Max. Rating, VGS=0V, TC=125°C - - 1000 A RDS(ON) VGS=10V, ID=0.5A - 4.0 5.0 Ω gfs VDS=50V, ID=0.5A 1.5 2.5 - S - 779 - tr Turn Off Delay Time td(off) Fall Time VGS=0V, VDS=25V, f=1MHz tf Total Gate Charge (Gate-Source+Gate-Drain) Qg Gate-Source Charge Qgs Gate-Drain (Miller) Charge Qgd VDD=0.5BVDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time is essentially independent of operating temperature) pF nS nC KA5H0380R, KA5M0380R, KA5L0380R Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Static Drain-Source on Resistance (Note) Forward Transconductance (Note) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn On Delay Time td(on) Rise Time Turn Off Delay Time Fall Time VGS=0V, ID=50A tr td(off) tf Total Gate Charge (Gate-Source+Gate-Drain) Qg Gate-Source Charge Qgs Gate-Drain (Miller) Charge Qgd VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time is essentially independent of operating temperature) - 75.6 - - 24.9 - - 40 - - 95 - - 150 - - 60 - - - 34 - 7.2 - - 12.1 - pF nS nC Note: 1. Pulse test: Pulse width ≤ 300S, duty ≤ 2% 1 2. S = ---R 3 KA5X03XX-SERIES Electrical Characteristics (Control Part) (Continued) (Ta = 25°C unless otherwise specified) Characteristic Symbol Test condition Min. Typ. Max. Unit UVLO SECTION Start Threshold Voltage VSTART VFB=GND 14 15 16 V Stop Threshold Voltage VSTOP VFB=GND 8.4 9 9.6 V Initial Accuracy FOSC KA5H0365R KA5H0380R 90 100 110 kHz Initial Accuracy FOSC KA5M0365R KA5M0380R 61 67 73 kHz Initial Accuracy FOSC KA5L0365R KA5L0380R 45 50 55 kHz - ±5 ±10 % OSCILLATOR SECTION Frequency Change With Temperature (2) Maximum Duty Cycle Maximum Duty Cycle - -25°C≤Ta≤+85°C Dmax KA5H0365R KA5H0380R 62 67 72 % Dmax KA5M0365R KA5M0380R KA5L0365R KA5L0380R 72 77 82 % Ta=25°C, 0V6.5V 6.9 7.5 8.1 V 4 5 6 A 4.80 5.00 5.20 V - 0.3 0.6 mV/°C 1.89 2.15 2.41 A 25 27 29 V 140 160 - °C VCC=14V - 100 170 A VCC<28 - 7 12 mA FEEDBACK SECTION Feedback Source Current IFB Shutdown Feedback Voltage VSD Shutdown Delay Current Idelay Ta=25°C, 5V≤Vfb≤VSD REFERENCE SECTION Output Voltage (1) Temperature Stability Vref (1)(2) Vref/ΔT Ta=25°C -25°C≤Ta≤+85°C CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit IOVER Max. inductor current VOVP VCC>24V PROTECTION SECTION Over Voltage Protection Thermal Shutdown Temperature (Tj) (1) TSD - TOTAL STANDBY CURRENT SECTION Start-up Current Operating Supply Current (Control Part Only) ISTART IOP Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS(water test) process 4 KA5X03XX-SERIES Typical Performance Characteristics(SenseFET part) (KA5H0365R, KA5M0365R, KA5L0365R) 10 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V Bottom:4.5V ID, Drain Current [A] ID, Drain Current [A] Top : 1 @Notes: 1. 300  s Pulse Test 2. TC = 25 o C 0.1 1 -25o C 25 oC 0.1 10 150 o C 1 2 4 @Notes: 1. VDS = 30V 2. 300  s Pulse Test 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 2. Transfer Characteristics Figure 1. Output Characteristics 7 Vgs=10V 5 4 Vgs=20V 3 2 @ Note : Tj=25 1 0 IDR, Reverse Drain Current [A] R DS(on) , [Ω ] Drain-Source On-Resistance 6 1 1 2 3 4 5 0.4 0.6 ID,Drain Current [A] Figure 3. On-Resistance vs. Drain Current 25 o C @Notes : 1. VGS = 0 V 2. 300  s Pulse Test 0.01 0 150 o C 0.1 0.8 1.0 1.2 VSD, Source-Drain Voltage [V] Figure 4. Source-Drain Diode Forward Voltage 700 Capacitance [pF] 500 Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 400 300 200 Coss 10 VDS =130V VGS,Gate-Source Voltage[V] 600 VDS =320V 8 VDS =520V 6 4 2 100 @ Note : ID=3.0A Crss 0 100 101 VDS, Drain-Source Voltage [V] Figure 5. Capacitance vs. Drain-Source Voltage 0 0 5 10 15 20 25 QG,Total Gate Charge [nC] Figure 6. Gate Charge vs. Gate-Source Voltage 5 KA5X03XX-SERIES Typical Performance Characteristics (Continued) (KA5H0365R, KA5M0365R, KA5L0365R) 1.2 2.5 @ Notes : 1. VGS = 0V 0.9 RDS(on), (Normalized) 1.0 Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 2.0 1.1 2. ID = 250 A 0.8 -50 0 50 100 1.5 1.0 0.0 150 @ Notes: 1. VGS = 10V 2. ID = 1.5 A 0.5 -50 0 TJ, Junction Temperature [oC] 50 100 150 T J , Junction Temperature [oC] Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature 102 3.0 10  s 101 100  s 1 ms 10 ms DC 100 @ Notes : 1. TC = 25 o C 10-1 2.5 ID, Drain Current [A] ID , Drain Current [A] Operation in This Area is Limited by R DS(on) 1.5 1.0 0.5 2. TJ = 150 o C 3. Single Pulse 10-2 0 10 2.0 0.0 101 102 103 25 50 75 100 Figure 10. Max. Drain Current vs. Case Temperature Figure 9. Max. Safe Operating Area 100 0.2 @ Notes : 1. Zθ JC (t)=1.25 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJM -TC =PDM *Zθ JC (t) 0.1 10-1 0.05 θ Z JC(t) , Thermal Response D=0.5 0.02 0.01 10-2 -5 10 single pulse 10-4 10-3 10-2 10-1 t1 , Square Wave Pulse Duration Figure 11. Thermal Response 6 125 TC, Case Temperature [oC] VDS , Drain-Source Voltage [V] 100 [sec] 101 150 KA5X03XX-SERIES Typical Performance Characteristics (Continued) (KA5H0380R, KA5M0380R, KA5L0380R) 10 1 VG S T op : 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V B ottom :4.5V I D , D r a i n C u r r e n t [A ] I D , D r a i n C u r r e n t [A ] 10 1 10 0 10 0 150 o C @ N otes : 1. 300  s P uls e T es t 2. T C = 25 o C 10 -1 10 0 25 o C 1 0 -1 10 1 2 @ N otes : 1 . V D S = 30 V 2 . 300  s P uls e T es t - 25 o C 4 V D S , D r a i n - S o u r c e V o l ta g e [V ] 6 8 10 V G S , G a te - S o u r c e V o l ta g e [V ] Figure 1. Output Characteristics Figure 2. Thansfer Characteristics F i g 3 . O n - R e s i s ta n c e v s . D r a i n C u r r e n t 8 7 10 I D R , R e ve r s e D r a i n C u r r e n t [A ] R D S ( on) , [Ω ] D r a in - S o u r c e O n - R e s is ta n c e V gs = 10V 6 5 V gs = 2 0 V 4 3 2 1 0 1 25 o C 1 50 o C @ N ote s : 1. V G S = 0V 2. 3 00  s P uls e T es t @ N o te : T j= 2 5 0 1 2 3 0 .1 4 0 .4 0 .6 I D ,D r a i n C u r r e n t Figure 3. On-Resistance vs. Drain Current 0 .8 1 .0 V S D , S o u r c e - D r a i n V o l ta g e [V ] Figure 4. Source-Drain Diode Forward Voltage 1 000 800 C a p a c ita n c e [p F ] 700 C is s 600 500 400 300 200 C oss 100 C rs s 0 100 10 V D S = 160V V G S ,G a te - S o u r c e V o l ta g e [V ] C i s s = C g s + C g d (C d s = s h o rt e d ) C oss = C ds + C gd C rs s = C g d 900 V D S = 400V 8 V D S = 640V 6 4 2 @ N o te : I D = 3 .0 A 10 1 V D S , D r a i n - S o u r c e V o l ta g e [V ] Figure 5. Capacitance vs. Drain-Source Voltage 0 0 5 10 15 20 25 30 Q G ,T o ta l G a te C h a r g e [n C ] Figure 6. Gate Charge vs. Gate-Source Voltage 7 KA5X03XX-SERIES Typical Performance Characteristics (Continued) (KA5H0380R, KA5M0380R, KA5L0380R) 2.5 2.0 RDS(on), (Normalized) 1.1 1.0 @ Notes : 1. V GS = 0V 0.9 2. ID = 250  A 0.8 -50 0 50 100 Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.5 1.0 2. ID = 1.5 A 0.0 150 @ Notes: 1. V GS = 10V 0.5 -50 Figure 7. Breakdown Voltage vs. Temperature 100 [A] 3.0 10 10  s 1 ms 10 ms DC 100 @ Notes : 1. TC = 25 o C 10- 1 2.5 ID, Drain Current [A] 100  s 2. TJ = 150 o C 3. Single Pulse 101 2.0 1.5 1.0 0.5 102 0.0 103 V DS , Drain-Source Voltage 40 60 80 100 120 TC, Cas e Tem perature [oC] [V] Figure 10. Max. Drain Current vs. Case Temperature Figure 9. Max. Safe Operating Area D=0.5 @ Notes : 1. Zθ J C (t)=1.25 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Zθ JC (t) 0.2 0.1 10-1 0.05 0.02 0.01 Z θJC (t) , Thermal Response 100 10-2 -5 10 single pulse 10-4 10-3 10- 2 10- 1 t1 , Square Wave Pulse Duration Figure 11. Thermal Response 8 150 3.5 Operation in This Area is Limited by R D S ( o n ) 1 ID , Drain Current 50 Figure 8. On-Resistance vs. Temperature 102 10- 2 0 T J , Junction T em perature [oC] T J , Junction T em perature [oC] 100 [sec] 101 140 KA5X03XX-SERIES Typical Performance Characteristics (Control Part) (Continued) (These characteristic graphs are normalized at Ta = 25°C) 1.20 1.15 1.10 1.05 Ifb 1.00 0.95 0.90 0.85 0.80 1.20 1.15 1.10 1.05 Fosc 1.00 0.95 0.90 0.85 0.80 -40 -25 0 25 50 75 100 125 150 Temperature [ -40 -25 25 50 75 100 125 150 Temperature [ ] ] Figure 1. Operating Frequency Figure 2. Feedback Source Current 1.50 1.40 1.30 1.20 Iover 1.10 1.00 0.90 0.80 0.70 1.20 1.15 1.10 1.05 Iop 1.00 0.95 0.90 0.85 0.80 -40 -25 0 25 50 75 100 125 150 -40 -25 Figure 3. Operating Supply Current 0 25 50 75 100 125 150 Temperature [ ] Temperature [ ] Figure 4. Peak Current Limit 1.20 1.15 1.10 1.05 Vstart 1.00 0.95 0.90 0.85 0.80 1.30 1.20 1.10 Istart 0 1.00 0.90 0.80 0.70 0.60 -40 -25 0 25 50 75 100 125 150 Temperature [ ] Figure 5. Start up Current -40 -25 0 25 50 75 100 125 150 Temperature [ ] Figure 6. Start Threshold Voltage 9 KA5X03XX-SERIES Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta = 25°C) 1.20 1.15 1.10 1.05 Dmax 1.00 0.95 0.90 0.85 0.80 1.20 1.15 1.10 1.05 Vstop 1.00 0.95 0.90 0.85 0.80 -40 -25 0 25 50 -40 -25 75 100 125 150 0 1.20 1.15 1.10 1.05 Vz 1.00 0.95 0.90 0.85 0.80 75 100 125 150 Figure 8. Maximum Duty Cycle 1.20 1.15 1.10 1.05 Vsd 1.00 0.95 0.90 0.85 0.80 -40 -25 0 25 50 75 100 125 150 -40 -25 Figure 9. VCC Zener Voltage 0 25 50 75 100 125 150 Temperature [ ] Temperature [ ] Figure 10. Shutdown Feedback Voltage 1.20 1.15 1.10 1.05 Vovp 1.00 0.95 0.90 0.85 0.80 1.20 1.15 1.10 1.05 Idelay 1.00 0.95 0.90 0.85 0.80 -40 -25 0 25 50 75 100 125 150 Temperature [ ] Figure 11. Shutdown Delay Current 10 50 Temperature [ ] Temperature [ ] Figure 7. Stop Threshold Voltage 25 -40 -25 0 25 50 75 100 125 150 Temperature [ ] Figure 12. Over Voltage Protection KA5X03XX-SERIES Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta = 25°C) 3.00 2.50 2.00 Rds(on) 1.50 1.00 0.50 0.00 -40 -25 0 25 50 75 100 125 150 Temperature [ ] Figure13. Static Drain-Source on Resistance 11 KA5X03XX-SERIES Package Dimensions TO-220F-4L 12 KA5X03XX-SERIES Package Dimensions (Continued) TO-220F-4L(Forming) 13 KA5X03XX-SERIES Ordering Information Product Number KA5H0365RTU KA5H0365RYDTU KA5M0365RTU KA5M0365RYDTU KA5L0365RTU KA5L0365RYDTU Product Number KA5H0380RTU KA5H0380RYDTU KA5M0380RTU KA5M0380RYDTU KA5L0380RTU KA5L0380RYDTU Package TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) Package TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) Marking Code BVDSS FOSC RDS(on) 5H0365R 650V 100kHz 3.6Ω 5M0365R 650V 67kHz 3.6Ω 5L0365R 650V 50kHz 3.6Ω Marking Code BVDSS FOSC RDS(on) 5H0380R 800V 100kHz 4.6Ω 5M0380R 800V 67kHz 4.6Ω 5L0380R 800V 50kHz 4.6Ω TU :Non Forming Type YDTU : Forming type DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 6/3/08 0.0m 001 Stock#DSxxxxxxxx © 2003 Fairchild Semiconductor Corporation TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component in any component of a life support, device, or 1. Life support devices or systems are devices or systems which, (a) system whose failure to perform can be reasonably expected to are intended for surgical implant into the body or (b) support or cause the failure of the life support device or system, or to affect its sustain life, and (c) whose failure to perform when properly used in safety or effectiveness. accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I57 © Fairchild Semiconductor Corporation www.fairchildsemi.com