Transcript
polyfet rf devices LC421 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 25.0 Watts Single Ended Package Style AC
"Polyfet"TM process
HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.
ROHS COMPLIANT o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 120 Watts
Junction to Case Thermal Resistance
Maximum Junction Temperature
o 1.30 C/W
o 200 C
DC Drain Current
Storage Temperature o o -65 C to 150 C
RF CHARACTERISTICS ( SYMBOL PARAMETER
MIN
Gps
Common Source Power Gain
η
Drain Efficiency
VSWR
TYP
7.0 A
Drain to Source Voltage
Gate to Source Voltage
36 V
36 V
20 V
25.0 WATTS OUTPUT ) MAX
8 65
Load Mismatch Tolerance
Drain to Gate Voltage
10:1
UNITS TEST CONDITIONS dB
Idq = 0.20 A, Vds =
12.5 V, F = 500 MHz
%
Idq = 0.20 A, Vds =
12.5 V, F = 500 MHz
Relative Idq = 0.20 A, Vds = 12.5 V, F =
500 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER
MIN
TYP
MAX
UNITS TEST CONDITIONS V
Ids = 25.00 mA, Vgs = 0V
Bvdss
Drain Breakdown Voltage
Idss
Zero Bias Drain Current
1.0
mA
Vds = 12.5 V, Vgs = 0V
Igss
Gate Leakage Current
1
uA
Vds = 0V Vgs = 30V
Vgs
Gate Bias for Drain Current
5
V
gM
Forward Transconductance
Rdson
Saturation Resistance
Idsat
Saturation Current
Ciss
Common Source Input Capacitance
Crss
Common Source Feedback Capacitance
Coss
Common Source Output Capacitance
36
2
Ids = 0.30 A, Vgs = Vds
2.7
Mho
Vds = 10V, Vgs = 5V
0.28
Ohm
Vgs = 20V, Ids = 8.00 A
17.00
Amp
Vgs = 20V, Vds = 10V
80.0
pF
Vds = 12.5 Vgs = 0V, F = 1 MHz
5.0
pF
Vds = 12.5 Vgs = 0V, F = 1 MHz
60.0
pF
Vds = 12.5 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:
[email protected] URL:www.polyfet.com
LC421 POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
LC421 Pin vs Pout Freq=500MHz, VDS=12.5V, Idq=.6A 13.00
30
L4 1 DIE CAPACITANCE
1000
12.00
25
Coss Pout
11.00
20
100
10.00
Ciss
15 9.00
Gain
10
10 8.00 Efficiency = 75% 5
7.00
0
Crss 1
6.00 0
1
2
3 4 Pin in Watts
5
6
0
7
2.5
5
7.5
10
12.5
15
17.5
20
22.5
25
27.5
30
VDS IN VOLTS
IV CURVE
ID & GM VS VGS
L4B 1 DIE IV
L4B 1 DIE ID & GM Vs VG
100.00
Id in amps; Gm in mhos
18 16
ID IN AMPS
14 12 10 8 6 4
Id 10.00
1.00
gM
2
0.10
0 0
2
vg=2v
4 Vg=4v
6
8
10 12 14 VDS IN VOLTS vg=8v Vg=6v
16 0
18
20
0
2
vg=12v
Zin Zout
4
6
8 10 12 Vgs in Volts
14
16
18
20
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
POLYFET RF DEVICES
.XXX +/-.005 inches
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:
[email protected] URL:www.polyfet.com
