Transcript
polyfet rf devices LP721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 20.0 Watts Single Ended Package Style AP
"Polyfet"TM process
HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.
ROHS COMPLIANT o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 80 Watts
Junction to Case Thermal Resistance
Maximum Junction Temperature
o 1.80 C/W
o 200 C
DC Drain Current
Storage Temperature o o -65 C to 150 C
RF CHARACTERISTICS ( SYMBOL PARAMETER
MIN
Gps
Common Source Power Gain
η
Drain Efficiency
VSWR
TYP
8.0 A
Drain to Source Voltage
Gate to Source Voltage
36 V
36 V
20 V
20.0 WATTS OUTPUT ) MAX
10 55
Load Mismatch Tolerance
Drain to Gate Voltage
10:1
UNITS TEST CONDITIONS dB
Idq = 0.20 A, Vds =
12.5 V, F = 500 MHz
%
Idq = 0.20 A, Vds =
12.5 V, F = 500 MHz
Relative Idq = 0.20 A, Vds = 12.5 V, F =
500 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER
MIN
TYP
MAX
UNITS TEST CONDITIONS V
Ids =
0.20 mA, Vgs = 0V
Bvdss
Drain Breakdown Voltage
Idss
Zero Bias Drain Current
2.0
mA
Vds = 12.5 V, Vgs = 0V
Igss
Gate Leakage Current
1
uA
Vds = 0V Vgs = 30V
Vgs
Gate Bias for Drain Current
5
V
gM
Forward Transconductance
Rdson
Saturation Resistance
Idsat
Saturation Current
Ciss
Common Source Input Capacitance
Crss
Common Source Feedback Capacitance
Coss
Common Source Output Capacitance
36
2
Ids = 0.20 A, Vgs = Vds
1.7
Mho
Vds = 10V, Vgs = 5V
0.40
Ohm
Vgs = 20V, Ids = 8.00 A
13.00
Amp
Vgs = 20V, Vds = 10V
50.0
pF
Vds = 12.5 Vgs = 0V, F = 1 MHz
2.0
pF
Vds = 12.5 Vgs = 0V, F = 1 MHz
40.0
pF
Vds = 12.5 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:
[email protected] URL:www.polyfet.com
LP721 POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE L1C 1DIE CAPACITANCE
LP721 POUT VS PIN Freq=500MHz, VDS=12.5V, Idq=.2A 30
16.00
25
1000
14.00 Pout
20
12.00
15
100
Ciss
10.00
Coss
Gain 10
10
8.00
Crss
Efficiency = 55% 5
6.00
0
4.00
1
0
1
2
3
4 5 PIN IN WATTS
6
7
0
5
10
8
15
20
25
30
VDS IN VOLTS
IV CURVE
ID & GM VS VGS
L1C 1 DIE IV
L1C 1 DIE ID, GM vs VG
100
16 14
ID IN AMPS
12
ID
10 8
10 6 4 2
G
0 0
2
4
vg=2v
6
Vg=4v
8
10 12 VDS IN VOLTS Vg=6v
vg=8v
14
16
vg=10v
18
vg=12v
20
1 0
2
Zin Zout
4
6 8 Vgs in Volts
10
12
14
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
POLYFET RF DEVICES
.XXX +/-.005 inches
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:
[email protected] URL:www.polyfet.com
