Transcript
MBR4035PT-MBR4060PT
MBR4035PT - MBR4060PT Features • • • • • •
Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection.
PIN 1 + CASE PIN 2
PIN 3
1
2
3
TO-3P/TO-247AD
Schottky Rectifiers Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Value
Parameter
Symbol
Units
4035PT
4045PT
4050PT
4060PT
35
45
50
60
VRRM
Maximum Repetitive Reverse Voltage
IF(AV)
Average Rectified Forward Current .375 " lead length @ TA = 125°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range
-65 to +175
°C
Operating Junction Temperature
-65 to +150
°C
Value
Units
IFSM Tstg TJ
V
40
A
400
A
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics Symbol
Parameter
PD
Power Dissipation
3.0
W
RθJL
Thermal Resistance, Junction to Lead
1.2
°C/W
Electrical Characteristics
TA = 25°C unless otherwise noted
Device
Parameter
Symbol
4035PT VF
IR IRRM
Forward Voltage IF = 20 A, TC = 25°C IF = 20 A, TC = 125°C IF = 40 A, TC = 25°C IF = 40 A, TC = 125°C Reverse Current @ rated VR TA = 25°C TA = 125°C Peak Repetitive Reverse Surge Current 2.0 us Pulse Width, f = 1.0 KHz
2001 Fairchild Semiconductor Corporation
4045PT
Units
4050PT
4060PT
0.72 0.62 -
0.70 0.60 0.80 0.75 1.0 100 2.0
V V V V mA mA
1.0
A
MBR4035PT - MBR4060PT, Rev. C
(continued)
60 50 40 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.00mm) LOAD LENGTHS
30 20 10 0
0
25
50 75 100 125 Ambient Temperature [ºC]
150
175
Peak Forward Surge Current, IFSM [A]
Average Rectified Forward Current, IF [A]
Typical Characteristics
Figure 1. Forward Current Derating Curve
100
1
2
5 10 20 50 Number of Cycles at 60Hz
100
MBR4035PT-MBR4045PT
10
10
Reverse Current, IR [mA]
Forward Current, IF [A]
200
50 TA = 25º C
T A = 150 º C
MBR4035PT-MBR4045PT
1 MBR4050PT-MBR4060PT
0.1 µS Pulse Width = 300µ 2% Duty Cycle
0
0.2
0.4 0.6 0.8 Forward Voltage, VF [V]
1
2000
MBR4035PT-MBR4045PT
1000 500
MBR4050PT-MBR4060PT
200 100 0.1
1 10 Reverse Voltage, VR [V]
Figure 5. Total Capacitance
2001 Fairchild Semiconductor Corporation
100
TA = 75º C
0.1 MBR4035PT-MBR4045PT
0.01
TA = 25º C MBR4050PT-MBR4060PT
0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%]
Figure 4. Reverse Current vs Reverse Voltage
Transient Thermal Impedance [ºC/W]
5000
T A = 125 º C MBR4050PT-MBR4060PT
1
0.001
1.2
Figure 3. Forward Voltage Characteristics
Total Capacitance, CT [pF]
300
Figure 2. Non-Repetitive Surge Current
50
0.01
400
100
10
1
0.1 0.01
0.1
1 10 Pulse Duration [s]
100
Figure 6. Thermal Impedance Characteristics
MBR4035PT - MBR4060PT, Rev. C
MBR4035PT-MBR4060PT
Schottky Rectifier
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Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4
