Transcript
NTD3808N Power MOSFET 16 V, 76 A, Single N-Channel, DPAK/IPAK Features
•ăTrench Technology •ăLow RDS(on) to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices
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V(BR)DSS
RDS(ON) MAX
ID MAX
5.8 mW @ 10 V 16 V
Applications
76 A 8.5 mW @ 4.5 V
•ăDC-DC Converters •ăLow Side Switching
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Value
Unit
VDSS
16
V
VGS
±16
V
ID
17
A
Continuous Drain Current RqJA (Note 1)
TA = 25°C
Power Dissipation RqJA (Note 1)
TA = 25°C
PD
2.6
W
Continuous Drain Current RqJA (Note 2)
TA = 25°C
ID
12
A
Steady State
13
TA = 85°C
1 2
9.1 1.3
W
Continuous Drain Current RqJC (Note 1)
TC = 25°C
ID
76
A
Power Dissipation RqJC (Note 1)
TC = 25°C
PD
52
W
TA = 25°C
IDM
152
A
TA = 25°C
IDmaxPkg
35
A
TJ, TSTG
-55 to +175
°C
tp=10ms
Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode)
59
IS
51
A
Drain to Source dV/dt
dV/dt
6
V/ns
Single Pulse Drain-to-Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 14 Apk, L = 0.3 mH, RG = 25 W)
EAS
29.4
mJ
TL
260
°C
Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
1
3
PD
TC = 85°C
4
4 4
TA = 25°C
Pulsed Drain Current
S N-CHANNEL MOSFET
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
CASE 369AA DPAK (Bent Lead) STYLE 2
2 3
1
2 3 CASE 369AC CASE 369D 3 IPAK IPAK (Straight Lead) (Straight Lead DPAK)
MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain
4 Drain
4 Drain YWW 38 08NG
Power Dissipation RqJA (Note 2)
TA = 85°C
G
YWW 38 08NG
Gate-to-Source Voltage
Symbol
YWW 38 08NG
Parameter Drain-to-Source Voltage
2 1 2 3 1 Drain 3 Gate Source Gate Drain Source 1 2 3 Gate Drain Source Y WW 3808N G
= Year = Work Week = Device Code = Pb-Free Package
ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.
Semiconductor Components Industries, LLC, 2007
December, 2007 - Rev. 0
1
Publication Order Number: NTD3808N/D
NTD3808N THERMAL RESISTANCE MAXIMUM RATINGS Symbol
Value
Unit
Junction-to-Case (Drain)
RqJC
2.9
°C/W
Junction-to-TAB (Drain)
RqJC-TAB
3.5
Junction-to-Ambient – Steady State (Note 1)
RqJA
57
Junction-to-Ambient – Steady State (Note 2)
RqJA
120
Parameter
1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol
Test Condition
Min
Drain-to-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
16
Drain-to-Source Breakdown Voltage Temperature Coefficient
V(BR)DSS/ TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
IDSS
V 16.9
VGS = 0 V, VDS = 16 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±16 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.5
V
ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient
VGS(TH)/TJ
Drain-to-Source On Resistance
RDS(on)
Forward Transconductance
gFS
1.5 5.8
mV/°C
VGS = 10 V
ID = 15 A
4.8
5.8
VGS = 4.5 V
ID = 15 A
6.7
8.5
VDS = 1.5 V, ID = 15 A
42
mW S
CHARGES AND CAPACITANCES Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
315
Total Gate Charge
QG(TOT)
14.1
Threshold Gate Charge
QG(TH)
Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge
QGS
1660 VGS = 0 V, f = 1.0 MHz, VDS = 12 V
pF
21
1.5 VGS = 4.5 V, VDS = 12 V, ID = 15 A
QGD QG(TOT)
560
4.8
nC
6.1 VGS = 10 V, VDS = 12 V, ID = 15 A
27.8
nC
SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
td(ON) tr td(OFF)
14 VGS = 4.5 V, VDS = 12 V, ID = 15 A, RG = 3.0 W
52 17
tf
9
td(ON)
10
tr td(OFF)
VGS = 10 V, VDS = 12 V, ID = 15 A, RG = 3.0 W
tf
21 29 16
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. 5. Assume standoff of 110 mm
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ns
ns
NTD3808N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter
Symbol
Test Condition
Min
Typ
Max
TJ = 25°C
0.84
1.0
TJ = 125°C
0.71
Unit
DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage
Reverse Recovery Time Charge Time
VSD
tRR ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, IS = 15 A
V
21 VGS = 0 V, dIS/dt = 100 A/ms, IS = 15 A
9.9
ns
11.1
QRR
8.8
nC
Source Inductance
LS
2.49
nH
Drain Inductance, DPAK
LD
0.0164
Drain Inductance, IPAK (Note 5)
LD
PACKAGE PARASITIC VALUES
TA = 25°C
1.88
Gate Inductance
LG
3.46
Gate Resistance
RG
1.0
W
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. 5. Assume standoff of 110 mm
ORDERING INFORMATION Package
Shipping†
NTD3808NT4G
DPAK (Pb-Free)
2500 / Tape & Reel
NTD3808N-1G
IPAK (Pb-Free)
75 Units / Rail
NTD3808N-35G
IPAK Trimmed Lead (3.5 " 0.15 mm) (Pb-Free)
75 Units / Rail
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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NTD3808N TYPICAL PERFORMANCE CURVES 100
100 4.0 V
6.0 V
3.8 V
70
3.6 V
60 50 40
3.4 V
30
3.2 V
20
3.0 V
10
70 60 50 40 TJ = 125°C
30 20
TJ = 25°C
TJ = -55°C
0 1
2
3
4
5
0
2
3
4
5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.048 0.043
ID = 15 A TJ = 25°C
0.038 0.033 0.028 0.023 0.018 0.013 0.008 3
1
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
4
5
6
7
8
9
10
0.010 TJ = 25°C VGS = 4.5 V
0.008
0.006 VGS = 10 V 0.004
0.002
0 10
20
30
40
50
60
70
80
90 100
VGS, GATE-TO-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On-Resistance vs. Gate-to-Source Voltage
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
1.6
10000 VGS = 0 V
ID = 15 A 1.4 VGS = 10 V IDSS, LEAKAGE (nA)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
80
10
2.8 V
0 0
0.003
VDS ≥ 10 V
90
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
80
4.5 V
TJ = 25°C
ID, DRAIN CURRENT (A)
4.2 V
90 10 V
1.2
1
1000
TJ = 175°C
TJ = 125°C
100
0.8
0.6 -50
10 -25
0
25
50
75
100
125
150
175
5
7.5
10
12.5
15
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Drain Voltage
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NTD3808N TYPICAL PERFORMANCE CURVES 2500 VGS, GATE-TO-SOURCE VOLTAGE (V)
10 VGS = 0 V TJ = 25°C
C, CAPACITANCE (pF)
2000 Ciss
1500
1000 Coss
500
Crss
Qgt 8
6
4 Qgs
Id = 15 A TJ = 25°C
2
0
0 0
2
4 6 8 10 12 DRAIN-TO-SOURCE VOLTAGE (V)
14
16
0
Figure 7. Capacitance Variation
td(off) tf
100
t, TIME (ns)
IS, SOURCE CURRENT (A)
VDD = 12 V ID = 15 A VGS = 10 V
tr td(on) 10
1 1
10 RG, GATE RESISTANCE (W)
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
1 ms 10 ms dc
RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V)
100
EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ)
0.1 0.1
0.5
0.6
0.7
0.8
0.9
1
Figure 10. Diode Forward Voltage vs. Current
100 ms
1
28
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
10 ms
VGS = 20 V SINGLE PULSE TC = 25°C
24
TJ = 25°C
0.4
100
1000
10
8 12 16 20 QG, TOTAL GATE CHARGE (nC)
VGS = 0 V
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
100
4
Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge
1000
ID, DRAIN CURRENT (A)
Qgd
30 ID = 14 A 25 20 15 10 5 0 25
50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature
Figure 11. Maximum Rated Forward Biased Safe Operating Area
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175
NTD3808N PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE) CASE 369AA-01 ISSUE A
-TC
B V
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
SEATING PLANE
E
R 4
Z
A
S
1
2
DIM A B C D E F H J L R S U V Z
H
3
U
F
J L D
STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN
2 PL
0.13 (0.005)
M
INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.025 0.035 0.018 0.024 0.030 0.045 0.386 0.410 0.018 0.023 0.090 BSC 0.180 0.215 0.024 0.040 0.020 --0.035 0.050 0.155 ---
T
SOLDERING FOOTPRINT* 6.20 0.244
2.58 0.101
5.80 0.228
3.0 0.118
1.6 0.063
6.172 0.243
SCALE 3:1
mm Ǔ ǒinches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.89 0.46 0.61 0.77 1.14 9.80 10.40 0.46 0.58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 --0.89 1.27 3.93 ---
NTD3808N PACKAGE DIMENSIONS
3 IPAK, STRAIGHT LEAD CASE 369AC-01 ISSUE O
B V
NOTES: 1.. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.. CONTROLLING DIMENSION: INCH. 3. SEATING PLANE IS ON TOP OF DAMBAR POSITION. 4. DIMENSION A DOES NOT INCLUDE DAMBAR POSITION OR MOLD GATE.
C E
R
DIM A B C D E F G H J K R V W
A SEATING PLANE
K
W F
J G
H D
3 PL
0.13 (0.005) W
INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.043 0.090 BSC 0.034 0.040 0.018 0.023 0.134 0.142 0.180 0.215 0.035 0.050 0.000 0.010
MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.09 2.29 BSC 0.87 1.01 0.46 0.58 3.40 3.60 4.57 5.46 0.89 1.27 0.000 0.25
IPAK (STRAIGHT LEAD DPAK) CASE 369D-01 ISSUE B C
B V
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
E
R 4
Z A
S
1
2
3
-TSEATING PLANE
K
J
F
H D G
DIM A B C D E F G H J K R S V Z
INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 ---
MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 ---
3 PL
0.13 (0.005)
M
STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN
T
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NTD3808N/D
