Transcript
!" Reflective sensor
EEEEEEEEEEEEEEEECFCA93298C The OIER3 reflective sensor consists in an infrared emitting diode and a double NPN silicon phototransistor. The components together are mounted side by side in a plastic black SMD housing. The black package avoids light reflections, noise and behaves as a barrier between led and photoreceivers. The phototransistors respond to radiation emitted from the diode only if a reflective object surface is within the field of view of the detector.
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EEEEEEEEEEEEEEEEEEEEEEEEC339A298C
2C
1 Unfocused for sensing diffused surface
Scanning
1 SMT package
Automated transaction systems
1 High uniformity
Metering systems
1 Very stable measurements
Motion control systems
1 High gain phototransistor
Non invasive medical equipment
1 No contact surface sensing
Low distance metering
1 Low profile 1 Low cost 1 Milling on the backside for side PCB mounting
EEEEEEEEEEEEEEEEEEEEEEEC9CA298C No. 1 2 3 4
Name C E A K
Function Phototransistor Collector Phototransistor Emitter LED Anode LED Cathode
Top view
Bottom view
EEEEEEEEEEEEEEEC9C8B298C OIER3
Rev. B; 11.2009
12234556667832897A8B5C
Reflective Sensor with Infrared LED
D
OIER3 ABSOLUTE MAXIMUM RATINGS Symbol
Min
Max
TA
Operating Temperature Range
Parameter
-25
85
Unit °C
Ts
Storage temperature
-40
85
°C
270
°C
Tsol
Lead temperature (solder) s
IF
Continuous forward current
50
mA
Vr
Reverse voltage
4
V
Emitter
Receiver VCE0
Collector-emitter voltage
30
V
Pd
Power dissipation
100
mW
Ic
Collector DC current
30
mA
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
ELECTRICAL/OPTICAL CHARACTERISTICS TA = 25°C unless otherwise noted. Symbol
Parameter
Conditions
Min
Typ
Max
Unit
1.7
V
Emitter VF
Forward voltage
IF=10µA
1.1
IF=20mA
1.5
V
1p
Peak wavelength
IF=20mA
875
nm
21
Spectral bandwidth at 50%
IF=20mA
45
nm
ICE0
Collector dark current
Receiver V(BR)CE0 Tr Tf Hfe
VCE=10V
Collector-emitter breakdown voltage
10
100
50
Rise time
Rl=1k3 VCE=5V Ic=1mA
Fall time
Rl=1k3 VCE=5V Ic=1mA
Phototransistor’s gain
nA V µs
10
µs
11 500
750
0.5
1
1000
Coupled Ic VCesat D
Collector current (reflective surface @ D=1mm) Collector-emitter saturation voltage
VCE=5V IF=20mA IF=20mA VCE=5V D=1mm
Optimal distance to reflective surface†
Unit: mm Tolerance: ± 0.2 mm
† See Figure 1
#C
0.3 1.1
MECHANICAL CHARACTERISTICS
12234556667832897A8B5C
mA V Mm
OIER3 TYPICAL PERFORMANCE CURVES Figure 1 – Normalized collector current VS Distance to reflective surface [mm] §
Figure 3 – Normalized collector current [Ic/Ic5mA]VS Forward led current [mA]§ 7
1,00
D=1.1mm Vcc=5V
Vcc=5V If=5mA 0,90
Norm aliz ed collector current [5m A]
6
Norm aliz ed collector current
0,80 0,70 0,60 0,50 0,40 0,30 0,20
5
4
3
2
1
0,10
Iled [mA] distance [m m]
0,00 0
2
4
6
8
10
0
Figure 2 – Normalized collector current typical drift VS temperature [°C] 1,3
3
5
7
9
11
13
15
17
19
Figure 4 – Forward led current [mA] VS Forward led voltage [V] § 120.00
Iled=11mA Iled=20mA Iled=21mA Iled=20mA Iled=30mA Iled=36mA
I [mA]
Forward voltage VS Forward current T=25°C
100.00
Normalized collector current
1,2
1
12
1,1
80.00
1,0
60.00
40.00
0,9
20.00 0,8
Temperature [°C]
0,7 -40
-20
0
20
40
60
80
0.00 1.1000
V [V] 1.2000
1.3000
1.4000
1.5000
1.6000
1.7000
100
§ Ta=25°C unless otherwise noted 12234556667832897A8B5C
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OIER3 TYPICAL APPLICATION INTERFACE
R1 =
Vcc − VF IF
R2 =
Vcc − Vcesat I sat
R1 =
Vcc − VF IF
R2 =
Vcc − Vce I R2
Figure 5 – Digital interface
IIN input current required for AD conversion Vo output analog voltage (the voltage gain is given by R2 and IF)
Figure 6 –Linear signal conversion to digital
R1 =
Vcc − VF IF
R2 =
Vcc − Vce I R2
Vo = Aol * (VR 2 − Vr ) Vr voltage threshold Vo voltage digital output
Figure 7 – Threshold comparator
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12234556667832897A8B5C