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Datasheet For Pdv-p8102 By Advanced Photonix

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CdS Photoconductive Photocells PDV-P8102 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] ±.010 [0.25] .169 [4.29] +.015 [0.38] -.010 [0.25] .079 [2.00] EPOXY ON LEADS 3 mm MAX 2X Ø.016 [0.40] .134 [3.40] PLASTIC COATED ±.010 [0.25] Ø.200 [5.08] 2X 1.023 [26.0] CERAMIC PACKAGE FEATURES DESCRIPTION • Visible light response • Sintered construction • Low cost APPLICATIONS The PDV-P8102 are (CdS), Photoconductive • Camera exposure photocells designed to sense light from 400 to 700 • Shutter controls nm. These light dependent resistors are available in • Night light Controls a wide range of resistance values. They’re packaged in a two leaded plastic-coated ceramic header. CELL RESISTANCE VS. ILLUMINANCE 1000 SYMBOL PARAMETER MIN MAX Vpk Applied Voltage 150 Pd Δpo/Δt Continuous Power Dissipation 100 TO Operating and Storage Temperature TS Soldering Temperature* -30 +75 +260 UNITS V mW/°C °C Resistance in Kohms ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED 100 °C 10 1 1 10 * 0.200 inch from base for 3 seconds with heat sink. 100 Illuminance in lux ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL RD RI S lrange lpeak tr Tf CHARACTERISTIC TEST CONDITIONS After 10 sec. @ 10 Lux @ 2856 °K 10 Lux @ 2856 °K LOG(R100)-LOG(R10)** Sensitivity LOG(E100)-LOG(E10)*** Spectral Application Range Flooded Spectral Application Range Flooded Rise Time 10 Lux @ 2856 °K Fall Time After 10 Lux @ 2856 °K Dark Resistance Illuminated Resistance MIN TYP 0.3 9 MAX 20 W/Lux 0.7 400 700 520 60 25 UNITS MW KW nm nm ms ms **R100, R10: cell resistances at 100 Lux and 10 Lux at 2856 °K respectively . ***E100, E10: luminances at 100 Lux and 10 Lux 2856 °K respectively. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. REV 3/30/06