Transcript
Single Phase Rectifier Bridges
PSB 125
IdAVM VRRM
= 124A = 800-1800 V
Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800
VRRM V 800 1200 1400 1600 1800
Type PSB 125/08 PSB 125/12 PSB 125/14 PSB 125/16 PSB 125/18
~ ~
Symbol
Test Conditions
IdAVM IFSM
TC = 85°C, module TVJ = 45°C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine
124 1800 1950
A A A
TVJ = TVJM VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
1600 1800
A A
TVJ = 45°C VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
16200 16000
A2 s A2 s
TVJ = TVJM VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
12800 13600
A2 s A2 s
-40 ... + 150 150 -40 ... + 150
°C °C °C
2500 3000
V∼ V∼
5 5 235
Nm Nm g
∫ i2 dt
TVJ TVJM Tstg VISOL Md Weight
50/60 HZ, RMS IISOL ≤ 1 mA
Maximum Ratings
t = 1 min t=1s
Mounting torque Terminal connection torque typ.
(M5) (M5)
Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 148688 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394“)
Symbol
Test Conditions
Characteristic Value
IR
VR = VRRM VR = VRRM
≤ ≤
0.3 8.0
mA mA
VF VTO rT RthJC
IF = 150 A TVJ = 25°C For power-loss calculations only TVJ = TVJM
≤
1.3 0.8 3
V V mΩ
per diode; DC current per module
0.83 0.21
K/W K/W
RthJK
per diode; DC current per module
1.13 0.28
K/W K/W
dS dA a
Creeping distance on surface Creeping distance in air Max. allowable acceleration
17.6 17.6 50
mm mm m/s2
TVJ = 25°C TVJ = TVJM
POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
PSB 125 10
IF(OV) -----IFSM
200
1.6
160 T=150°C
2 As
IFSM (A) TVJ=45°C TVJ=150°C
A
1800
5
1600
1.4
120
1.2
10
TVJ=45°C
4
TVJ=150°C
1
80
0 VRRM
0.8 1/2 VRRM
40
T=25°C
IF
0.6
1 VRRM
10
0 VF
1
1.5 V
0
1
10
Fig. 1 Forward current versus voltage drop per diode
3 2
1
0.4 10
2
3
t[ms] 10
10
Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration
4 t [ms]
6
10
Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor)
80
300 [W]
TC 85
PSB 125
0.19 0.11
250
= RTHCA [K/W]
0.28
90
150
95
[A]
DC sin.180° rec.120° rec.60° rec.30°
100
200
105
0.44
100
110 115
150
120
0.77
125
100
DC sin.180°
135
1.77
rec.120°
50
rec.60° rec.30°
PVTOT 0
140
IdAV
145
0
°C
150
50
100
IFAVM
50
130
[A]
0
Tamb
50
100
[K]
150
Fig. 4 Power dissipation versus direct output current and ambient temperature
50
100 TC(°C)
150
200
Fig.5 Maximum forward current at case temperature
1.5 K/W Z thJK
1
Z thJC
0.5
Zth
0.01
0.1 t[s]
1
10
Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
