Transcript
Single Phase Rectifier Bridge
PSB 35
IdAVM VRRM
= 35 A = 800-1800 V
Preliminary Data Sheet VRSM (V) 800 1200 1400 1600 1800
VRRM (V) 800 1200 1400 1600 1800
Symbol IdAVM IFSM
∫ i dt 2
TVJ TVJM Tstg VISOL
Type PSB PSB PSB PSB PSB
+
35/08 35/12 35/14 35/16 35/18
~ ~
-
Test Conditions TC = 85 °C,
(per module)
TVJ = 45 °C
Maximum Ratings 35
A
t = 10 ms (50 Hz), sine
400
A
VR = 0
t = 8.3 ms (60 Hz), sine
440
A
TVJ = TVJM
t = 10 ms (50 Hz), sine
360
A
VR = 0
t = 8.3 ms (60 Hz), sine
400
A
TVJ = 45 °C
t = 10 ms (50 Hz), sine
800
A²s
VR = 0
t = 8.3 ms (60 Hz), sine
810
A²s
TVJ = TVJM
t = 10 ms (50 Hz), sine
650
A²s
VR = 0
t = 8.3 ms (60 Hz), sine
670
A²s
-40... + 150 150
°C °C
-40... + 150
°C
50/60 Hz, RMS t = 1 min
2500
V∼
IISOL ≤ 1 mA
3000
Features
• • • • • •
Package with screw terminals Isolation voltage 3000 V∼ Planar glass passivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered E 148688
Applications
• • • •
Supplies for DC power equipment Input rectifier for PWM inverter Battery DC power supplies Field supply for DC motors
Advantages
Md
Mounting torque
(M4)
1.5
Nm
• • •
Weight
Terminal connection torque (M4) typ.
1.5 105
Nm g
Package style and outline
t=1s
V∼
Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability
Dimensions in mm (1mm = 0.0394“)
Symbol
Test Conditions
IR
VR = VRRM, TVJ = 25°C
VF VTO rT RthJC RthJK ds dA a
Characteristic Value ≤
0.3
mA
VR = VRRM, TVJ = TVJM
≤
5
mA
IF = 150 A,
≤
2.2
V
0.85
V
TVJ = 25 °C
For power-loss calculations only
12
mΩ
2.8 0.7 3.4
K/W K/W K/W
per module
0.85
K/W
Creeping distance on surface Creeping distance in air Max. allowable acceleration
18.6 18.6 50
mm mm m/s²
per diode; DC per module per diode; DC
Data according to IEC 60747 refer to a single diode unless otherwise stated
POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
200 [A]
I F(OV) -----I FSM
1:TVJ= 150°C
10 TVJ=45°C
2:TVJ= 25°C
3
IFSM (A)
1.6
2 As
TVJ=150°C
400
360
150
TVJ=45°C 1.4
TVJ=150°C 1.2
100
1 0 V RRM
50
0.8
IF
0.6
1/2 V RRM
1
0 1.0
1 V RRM
2 1.5 2.0 VF[V]
2.5
10
0.4
3.0
0 10
Fig. 1 Forward current versus
1 10
2 10
t[ms]
3 10
Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration
voltage drop per diode
50
[W] 80
TC 55
PSB 35 0.29 0.01
60
= RTHCA [K/W]
65 70 75
0.57
1.12
95 100 105
2.23
DC sin.180° rec.120° rec.60° rec.30°
20
PVTOT 0 10 IFAVM
30
[A]
110 115 120 125 130 135
5.57
140 145 °C 150
0
1
2
4 t [ms]
Tamb
50
100
[K]
6
10
Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor)
40 DC sin.180°
[A]
rec.120° rec.60°
30
rec.30°
80 85 90
60
40
2
20
10 I dAV 0
50
100
150
200
T (°C) C
150
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig.5 Maximum forward current at case temperature
5
K/W
4 Z thJC
3
Z thJK
2
1 Z th
0.01
0.1
t[s]
1
10
Fig. 6 Transient thermal impedance per diode (or thyristor), calculated
POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
