Transcript
Single Phase Rectifier Bridge
PSB 55
IdAVM VRRM
= 50 A = 800-1800 V
Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800
VRRM V 800 1200 1400 1600 1800
Type PSB 55/08 PSB 55/12 PSB 55/14 PSB 55/16 PSB 55/18
~ ~
Symbol
Test Conditions
IdAVM IFSM
TC = 64°C, module TVJ = 45°C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine
50 750 820
A A A
TVJ = TVJM VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
670 740
A A
TVJ = 45°C VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
2800 2820
A2 s A2 s
TVJ = TVJM VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
2250 2300
A2 s A2 s
-40 ... + 150 150 -40 ... + 150
°C °C °C
2500 3000
V∼ V∼
5 3 200
Nm Nm g
∫ i2 dt
TVJ TVJM Tstg VISOL Md Weight
50/60 HZ, RMS IISOL ≤ 1 mA
Maximum Ratings
t = 1 min t=1s
Mounting torque Terminal connection torque typ.
(M5) (M5)
Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 148688 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394“)
Symbol
Test Conditions
Characteristic Value
IR
VR = VRRM VR = VRRM
≤ ≤
0.3 10.0
mA mA
VF VTO rT RthJC
IF = 150 A TVJ = 25°C For power-loss calculations only TVJ = TVJM
≤
1.6 0.85 8
V V mΩ
per diode; DC current per module
2.6 0.65
K/W K/W
RthJK
per diode; DC current per module
2.84 0.71
K/W K/W
dS dA a
Creeping distance on surface Creeping distance in air Max. allowable acceleration
7.8 7.8 50
mm mm m/s2
TVJ = 25°C TVJ = TVJM
POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
PSB 55 200 [A]
1:TVJ= 150°C
IF(OV) -----IFSM
2:TVJ= 25°C
150
4 10 2 As
IFSM (A) TVJ=45°C TVJ=150°C
1.6
750
670 TVJ=45°C
1.4
100
1.2
10
3
TVJ=150°C
1 0 VRRM
50
0.8 1/2 VRRM
IF
1
0 0.5
0.6
2 1 1.5 VF[V]
2
10
2.5
0.4
0
1
10
Fig. 1 Forward current versus voltage drop per diode
100 [W]
1 VRRM
10
2
3
t[ms] 10
85
TC 0.6 0.35
90
= RTHCA [K/W]
4 t [ms]
70
105
60
10
DC sin.180° rec.120° re c.60° .30°
[A]
100
1.35
6
Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor)
95
0.85
80
2
1
10
Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration
PSB 55
2
50
110 115 120
2.35
40 DC sin.180° rec.120° rec.60° rec.30°
20 PVTOT 0
125 130 135
5.35
140 145
°C
150
10 IFAVM
30
30
[A]
0
Tamb
50
100
[K]
150
Fig. 4 Power dissipation versus direct output current and ambient temperature
10 IdAV 0 50
100
150
20
T C(°C)
Fig.5 Maximum forward current at case temperature
4 K/W Z thJK Z thJC
3
2
1 Z th
0.01
0.1
t[s]
1
10
Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
