Transcript
Single Phase Rectifier Bridges
PSB 62
IdAVM VRRM
= 52 A = 800-1800 V
Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800
VRRM V 800 1200 1400 1600 1800
Type
~ ~
PSB 62/08 PSB 62/12 PSB 62/14 PSB 62/16 PSB 62/18
Symbol
Test Conditions
IdAVM IFSM
TC = 100°C, module TVJ = 45°C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine
52 550 600
A A A
TVJ = TVJM VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
500 550
A A
TVJ = 45°C VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
1520 1520
A2 s A2 s
TVJ = TVJM VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
1250 1250
A2 s A2 s
-40 ... + 150 150 -40 ... + 125
°C °C °C
2500 3000
V∼ V∼
5 5 160
Nm Nm g
∫ i2 dt
TVJ TVJM Tstg VISOL Md Weight
50/60 HZ, RMS IISOL ≤ 1 mA
Maximum Ratings
t = 1 min t=1s
Mounting torque Terminal connection torque typ.
(M5) (M5)
Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 148688 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394“)
Symbol
Test Conditions
Characteristic Value
IR
VR = VRRM VR = VRRM
≤ ≤
0.3 5
mA mA
VF VTO rT RthJC
IF = 150 A TVJ = 25°C For power-loss calculations only TVJ = TVJM
≤
1.8 0.8 8
V V mΩ
per diode; DC current per module
1.45 0.36
K/W K/W
RthJK
per diode; DC current per module
1.87 0.47
K/W K/W
dS dA a
Creeping distance on surface Creeping distance in air Max. allowable acceleration
10 9.4 50
mm mm m/s2
TVJ = 25°C TVJ = TVJM
POWERSEM GmbH,Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
PSB 62 IF(OV) -----IFSM
200
4 10 2 As
IFSM (A) TVJ=45°C TVJ=150°C
[A] 1.6
550
500
150 1.4 1.2
10
100
TVJ=45°C
3
TVJ=150°C
1 0 VRRM
0.8
50
1/2 VRRM
Tvj = 150°C
IF
0.6
Tvj = 25°C
0
0.5
1 1.5 VF [V]
10
0.4 0
2
1
10
Fig. 1 Forward current versus voltage drop per diode 200 [W]
1 VRRM
10
2
3
t[ms] 10
2 1
2
10
Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration
4 t [ms]
6
10
Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor)
75
TC
PSB 62
0.25 0.12
175
= RTHCA [K/W]
0.37
80 85 90
150
70 DC sin.180° rec.120° rec.60° rec.30°
[A]
95
125
100
0.62
50
105 110
100
115
1.12
75
25 PVTOT 0
130
2.62
135 140
10 IdAV
145
0
°C
150
IFAVM
20
40
[A]
30
125
DC sin.180° rec.120° rec.60° rec.30°
50
120
0
Tamb
50
100
[K]
150
Fig. 4 Power dissipation versus direct output current and ambient temperature
50
100
150
200
TC(°C)
Fig.5 Maximum forward current at case temperature
2.5 K/W
Z thJK
2
Z thJC
1.5 1 0.5 Zth
0.01
0.1
t[s]
1
10
Fig. 6 Transient thermal impedance per diode (or thyristor), calculated
POWERSEM GmbH,Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
