Transcript
Single Phase Rectifier Bridges
PSB 95
IdAVM VRRM
= 95 A = 800-1800 V
Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800
VRRM V 800 1200 1400 1600 1800
Type PSB 95/08 PSB 95/12 PSB 95/14 PSB 95/16 PSB 95/18
~ ~
Symbol
Test Conditions
IdAVM IFSM
TC = 85°C, module TVJ = 45°C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine
95 1200 1350
A A A
TVJ = TVJM VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
1040 1120
A A
TVJ = 45°C VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
7200 9110
A2 s A2 s
TVJ = TVJM VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
5400 6270
A2 s A2 s
-40 ... + 150 150 -40 ... + 125
°C °C °C
2500 3000
V∼ V∼
5 5 220
Nm Nm g
∫ i2 dt
TVJ TVJM Tstg VISOL Md Weight
50/60 HZ, RMS IISOL ≤ 1 mA
Maximum Ratings
t = 1 min t=1s
Mounting torque Terminal connection torque typ.
(M5) (M5)
Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered, E 148688 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394“)
Symbol
Test Conditions
Characteristic Value
IR
VR = VRRM VR = VRRM
≤ ≤
0.3 6.0
mA mA
VF VTO rT RthJC
IF = 150 A TVJ = 25°C For power-loss calculations only TVJ = TVJM
≤
1.5 0.8 5.0
V V mΩ
per diode; DC current per module
0.9 0.225
K/W K/W
RthJK
per diode; DC current per module
1.1 0.275
K/W K/W
dS dA a
Creeping distance on surface Creeping distance in air Max. allowable acceleration
8.0 4.5 50
mm mm m/s2
TVJ = 25°C TVJ = TVJM
POWERSEM GmbH, Walpersdorfer Str.53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
PSB 95 10
IF(OV) -----IFSM
200
IFSM (A) TVJ=45°C TVJ=150°C
A
1200
1.6
160
2 As
1040
TVJ=45°C
1.4
T=150°C
120
4
TVJ=150°C
1.2
80
1 0 VRRM
0.8
40
1/2 VRRM
0.6
T=25°C
IF
1 VRRM
10
0 VF
1
0.4
1.5 V
0 10
Fig. 1 Forward current versus voltage drop per diode 300 [W]
1 2 10 t[ms] 10
80
250
2
= RTHCA [K/W]
0.28
120
90
[A] 100
95
4 t [ms]
105
0.44
115
125
50 PVTOT 0 IFAVM
0 100 [A]
40
130 135
1.77
140 145
°C
150
50
60
120
0.77
DC sin.180° rec.120° rec.60° rec.30°
80
110
150 100
10
DC sin.180° rec.120° rec.60° rec.30°
100
200
6
Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor)
TC 85
0.19 0.11
1
3 10
Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration
PSB 95
3
Tamb
50
100
[K]
150
Fig. 4 Power dissipation versus direct output current and ambient temperature
20 I dAV 0 50
100 TC(°C)
150
200
Fig.5 Maximum forward current at case temperature
K/W
1.2
Z thJK
1
Z thJC
0.8 0.6 0.4 0.2
Z th
0.01
0.1
t[s]
1
10
Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str.53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
