Datasheet For Psbt 125/08 By Powersem

Transcript

Single Phase Full Controlled Bridges PSBT 125 IdAV VRRM = 123 A = 400-1600 V Preliminary Data Sheet VRSM VDSM 500 900 1300 1500 *1700 VRRM VDRM 400 800 1200 1400 *1600 + Type PSBT 125/04 PSBT 125/08 PSBT 125/12 PSBT 125/14 PSBT 125/16 ~ ~ * Delivery on request Symbol Test Conditions IdAV ITSM TC = 85 °C, module TVJ = 45°C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine 123 1500 1600 A A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1350 1450 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 11 200 10 750 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 9100 8830 A2 s A2 s TVJ = TJVM repetitive, IT = 50 A f = 400Hz, tP = 200µs VD = 2/3 VDRM 150 A/µs . non repetitive, IT = 1/3 IdAV IG = 0.3 A diG/dt = 0.3 A/µs 500 A/µs 1000 V/µs 10 5 0.5 W W W 10 -40 ... + 125 125 V °C °C ∫ i2 dt (di/dt)cr Maximum Ratings (dv/dt)cr TVJ = TVJM VDR = 2/3 VDRM RGK = ∞, method 1 (linear voltage rise) PGM TVJ = TVJM IT = ITAVM PGAVM VRGM TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL ≤ 1 mA ≤ ≤ tP = 30µs tP = 500µs t = 1 min t=1s Mounting torque Terminal connection torque typ. POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 (M6) (M6) -40 ... + 125 °C 2500 3000 V∼ V∼ 5 5 270 Nm Nm g Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Low forward voltage drop • UL released, E 148688 Applications • Heat and temperature control for industrial furnaces and chemical processes • Lighting control • Motor control • Power converter Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • High power density Package, style and outline Dimensions in mm (1mm = 0.0394“)  2003 POWERSEM reserves the right to change limits, test conditions and dimensions PSBT 125 Symbol Test Conditions ID, IR VT VTO rT VGT TVJ = TVJM, VR = VRRM, VD = VDRM ≤ IT = 200A, TVJ = 25°C ≤ For power-loss calculations only (TVJ = TVJM) Characteristic Value 5 1.57 0.85 3.5 mA V V mΩ VD = 6V TVJ = 25°C TVJ = -40°C ≤ ≤ 1.5 1.6 V V IGT VD = 6V TVJ = 25°C TVJ = -40°C ≤ ≤ 100 200 mA mA VGD IGD IL TVJ = TVJM TVJ = TVJM VD = 2/3 VDRM VD = 2/3 VDRM ≤ ≤ 0.2 5 V mA TVJ = 25°C, tP = 30µs IG = 0.3A, diG/dt = 0.3A/µs ≤ 450 mA IH tgd TVJ = 25°C, VD = 6V, RGK = ∞ TVJ = 25°C, VD = ½ VDRM IG = 0.3A, diG/dt = 0.3A/µs ≤ ≤ 200 2 mA tq TVJ = TVJM, IT = 20A, tP = 200µs, VR = 100V -di/dt = 10A/µs, dv/dt = 15V/µs, VD = 2/3 VDRM 150 µs RthJC per thyristor; sine 180°el per module 0.46 0.115 K/W K/W RthJK per thyristor; sine 180° el per module 0.55 0.1375 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 10 9.4 50 mm mm m/s2 µs 300 [A] 250 1:T = 125°C VJ T 2:TVJ= 25°C VJ IT(OV) -----ITSM =25°C us 1.6 200 ITSM (A) TVJ=45°C TVJ=150°C 1500 1350 1.4 100 Limit 150 t gd 1.2 Typ. 1 100 10 0 VRRM 0.8 1/2 VRRM 50 I F 0 1 0.5 1 VF[V] 0.6 2 1.5 2 Fig. 1 Forward current vs. voltage drop per diode or thyristor POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 1 10 100 I [mA] G 1 VRRM 0.4 1000 Fig. 2 Gate trigger delay time 0 10 1 2 10 t[ms] 10 3 10 Fig. 3 Surge overload current per diode (or thyristor) IFSM, ITSM: Crest value t: duration  2003 POWERSEM reserves the right to change limits, test conditions and dimensions PSBT 125 10 V 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10W 140 DC [A] 120 sin.180° rec.120° rec.60° 100 80 6 1 rec.30° 60 5 40 4 VG 3 2 20 ITAV 1 0.1 10 0 10 1 0 50 10 2 IG 10 3 10 4 mA Fig.4 Gate trigger characteristic 100 150 200 T (°C) C Fig.5 Maximum forward current at case temperature 0.8 K/W Z thJK 0.6 Z thJC 0.4 0.2 Z th 0.01 0.1 t[s] 1 10 Fig.6 Transient thermal impedance per thyristor or diode (calculated) 400 [W] PSBT 125 350 80 0.13 0.07 = RTHCA [K/W] TC 85 0.2 90 300 95 250 0.3 100 200 DC sin.180° rec.120° rec.60° rec.30° 100 50 PVTOT 0 105 0.51 150 110 115 1.13 120 °C 125 25 ITAVM 75 125 0 [A] Tamb 50 100 [K] 150 Fig. 7 Power dissipation vs. direct output current and ambient temperature POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2003 POWERSEM reserves the right to change limits, test conditions and dimensions