Transcript
PSKD 95
Diode Modules
IFRMS IFAVM VRRM
Preliminary Data Sheet
VRSM
VRRM
V
V
900 1300 1500 1700 1900
800 1200 1400 1600 1800
Type
3
1
TO-240 AA
2
1
2
3
PSKD 95/08 PSKD 95/12 PSKD 95/14 PSKD 95/16 PSKD 95/18
Symbol IFRMS IFAVM
Test Conditions TVJ = TVJM TC = 105°C; 180° sine
IFSM
TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0
t t t t
= = = =
10 ms (50 8.3 ms (60 10 ms (50 8.3 ms (60
Hz), Hz), Hz), Hz),
sine sine sine sine
TVJ = 45°C VR = 0 TVJ = TVJM VR = 0
t t t t
= = = =
10 ms (50 8.3 ms (60 10 ms (50 8.3 ms (60
Hz), Hz), Hz), Hz),
sine sine sine sine
∫i2dt
= 2x 180 A = 2x 120 A = 800-1800 V
Maximum Ratings 180 A 120 A
TVJ TVJM Tstg
2800 3300 2500 2750 39 45 31 31
A A A A
200 000 200 300
A 2s A 2s A 2s A 2s
-40...+150 150 -40...+125
°C °C °C
3000 3600
V~ V~
VISOL
50/60 Hz, RMS IISOL ≤ 1 mA
Md Weight
Mounting torque (M5) Terminal connection torque (M5) Typical including screws
Symbol IR
Test Conditions TVJ = TVJM; VR = VRRM
VF
IF = 300 A; TVJ = 25°C
1.43
V
VT0 rT
For power-loss calculations only TVJ = TVJM
0.75 1.95
V mΩ
QS IRM
TVJ = 125°C; IF = 50 A, -di/dt = 6 A/µs
170 45
µC A
RthJC
per per per per
0.26 0.13 0.46 0.23
K/W K/W K/W K/W
12.7 9.6 50
mm mm m/s 2
t = 1 min t=1s
2.5-4/22-35 Nm/lb.in. 2.5-4/22-35 Nm/lb.in. 90 g
Features International standard package JEDEC TO-240 AA Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 ●
●
● ● ●
Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies ● ● ● ●
Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits ● ● ●
●
RthJK dS dA a
diode; DC current module diode; DC current module
Characteristic Values 15 mA
other values see Fig. 6/7
Creepage distance on surface Strike distance through air Maximum allowable acceleration
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 1 Surge overload current IFSM: Crest value, t: duration
Fig. 2 ∫i2dt versus time (1-10 ms)
Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode)
Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load
Circuit B2 2 x PSKD 95
2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
Circuit B6 3 x PSKD 95
Fig. 6 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180° 120° 60° 30°
RthJC (K/W) 0.26 0.28 0.30 0.34 0.38
Constants for ZthJC calculation: i 1 2 3
Rthi (K/W)
ti (s)
0.013 0.072 0.175
0.0012 0.047 0.394
Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180° 120° 60° 30°
RthJK (K/W) 0.46 0.48 0.50 0.54 0.58
Constants for ZthJK calculation: i 1 2 3 4
Rthi (K/W)
ti (s)
0.013 0.072 0.175 0.2
0.0012 0.047 0.394 1.32
POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
