Transcript
Thyristor Modules Thyristor/Diode Modules
PSKT 26 PSKH 26
ITRMS ITAVM VRRM
= 2x 50 A = 2x 32 A = 800-1600 V
Preliminary Data Sheet VRSM
VRRM
VDSM
VDRM
V
V
900 1300 1500 1700
800 1200 1400 1600
Type
TO-240 AA
Version 1
Version 8
Version 8
PSKT 26/08io1 PSKT 26/12io1 PSKT 26/14io1 PSKT 26/16io1
PSKT PSKT PSKT PSKT
PSKH PSKH PSKH PSKH
Symbol
Test Conditions
ITRMS, IFRMS ITAVM, IFAVM
TVJ = TVJM TC = 75°C; TC = 85°C;
180° sine 180° sine
ITSM, IFSM
TVJ = 45°C; VR = 0
∫i2dt
(di/dt)cr
26/08io8 26/12io8 26/14io8 26/16io8
1
50 32 27
A A A
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
520 560
A A
TVJ = TVJM VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
460 500
A A
TVJ = 45°C VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
1350 1300
A2s A2s
TVJ = TVJM VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
1050 1030
A2s A2 s
TVJ = TVJM repetitive, IT = 45 A f =50 Hz, tP =200 µs VD = 2/3 VDRM IG = 0.45 A non repetitive, IT = ITAVM diG/dt = 0.45 A/µs
150
A/µs
500
A/µs
TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise)
PGM
TVJ = TVJM IT = ITAVM
tP = 30 µs tP = 300 µs
1000
VRGM
10
V
TVJ TVJM Tstg
-40...+125 125 -40...+125
°C °C °C
Md
Mounting torque (M5) Terminal connection torque (M5)
Weight
Typical including screws
5
3000 3600
V~ V~
2.5-4.0/22-35 Nm/lb.in. 2.5-4.0/22-35 Nm/lb.in. 90
g
6 7 1
5 4 2
3
6 1
5 2
3
1
5 2
Features
● ● ● ●
International standard package, JEDEC TO-240 AA Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 Gate-cathode twin pins for version 1
Applications ● ● ●
DC motor control Softstart AC motor controller Light, heat and temperature control
Advantages ● ● ●
●
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
3
PSKH Version 8
●
PGAV
t = 1 min t=1s
4
PSKT Version 8
V/µs W W W
50/60 Hz, RMS IISOL ≤ 1 mA
7
PSKT Version 1
●
10 5 0.5
VISOL
6
26/08io8 26/12io8 26/14io8 26/16io8
Maximum Ratings
(dv/dt)cr
3
2
Space and weight savings Simple mounting with two screws Improved temperature and power cycling capability Reduced protection circuits
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Symbol
Test Conditions
IRRM, IDRM
TVJ = TVJM; VR = VRRM; VD = VDRM
VT, VF
IT, IF = 80 A; TVJ = 25°C
1.64
V
VT0 rT
For power-loss calculations only (TVJ = 125°C)
0.85 11.0
V mΩ
VGT
VD = 6 V;
TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C
1.5 1.6 100 200
V V mA mA
IGT
VD = 6 V;
Characteristic Values 3
VGD IGD
TVJ = TVJM;
VD = 2/3 VDRM
0.2 10
V mA
IL
TVJ = 25°C; tP = 10 µs; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/µs
450
mA
IH
TVJ = 25°C; VD = 6 V; RGK = ∞
200
mA
tgd
TVJ = 25°C; VD = 1/2 VDRM IG = 0.45 A; diG/dt = 0.45 A/µs
2
µs
tq
TVJ = TVJM; IT = 20 A, tP = 200 µs; -di/dt = 10 A/µs VR = 100 V; dv/dt = 20 V/µs; VD = 2/3 VDRM
QS IRM
TVJ = TVJM; IT, IF = 25 A, -di/dt = 0.64 A/µs
RthJC
per per per per
RthJK dS dA a
thyristor/diode; DC current module thyristor/diode; DC current module
10 1: IGT, TVJ = 125°C
mA
2: IGT, TVJ = 25°C
V
3: IGT, TVJ = -40°C
VG
2
1
3
1
5
6
4
4: PGAV = 0.5 W 5: PGM =
IGD, TVJ = 125°C 0.1 100
101
5W
6: PGM = 10 W 102
103 IG
mA 104
Fig. 1 Gate trigger characteristics typ.
other values see Fig. 8/9
Creepage distance on surface Strike distance through air Maximum allowable acceleration
150
µs 1000
50 6
TVJ = 25°C
µC A
0.88 0.44 1.08 0.54
K/W K/W K/W K/W
12.7 9.6 50
mm mm m/s2
µs tgd typ.
100
Limit
10
Optional accessories for module-type PSKT 26 version 1 Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
1 10
100
mA IG
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394") PSKT/ PSKH Version 1
PSKT Version 8
PSKH Version 8
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
1000
Fig. 4 ∫i2dt versus time (1-10 ms) Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration
Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode)
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
Circuit B6 3 x PSKT 26 or 3 x PSKH 26
POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature
Circuit W3 3 x PSKT 26 or 3 x PSKH 26
PSKT 26 PSKH 26 Z thJC(t)
Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: RthJC (K/W)
d DC 180° 120° 60° 30°
0.88 0.92 0.95 0.98 1.01
Constants for ZthJC calculation: i 1 2 3
Rthi (K/W)
ti (s)
0.019 0.029 0.832
0.0031 0.0216 0.191
Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) PSKT 26 PSKH 26 ZthJK(t)
RthJK for various conduction angles d: d DC 180° 120° 60° 30°
RthJK (K/W) 1.08 1.12 1.15 1.18 1.21
Constants for ZthJK calculation: i 1 2 3 4
Rthi (K/W)
ti (s)
0.019 0.029 0.832 0.2
0.0031 0.0216 0.191 0.45
POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
