Transcript
RF3189 QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE Package Style: Module (5.00mmx5.00mmx1.00mm)
10 DCS RFOUT
DCS RFIN 1
BAND SEL 2
Features
Linear EDGE and GSM Operation
High Gain for use in Systems with Low RF Driver Power
Typical GMSK Efficiency GSM850/900 48/53% DCS/PCS 50/53%
Auto VBATT Tracking Circuit avoids Switching Transients at Low Supply Voltage
Integrated Power Control
VBATT 4
VMODE 5
VRAMP / VBIAS 6
Low Power Mode for Reduced EDGE Current
Digital Bias Control: Simple Implementation of Low Power Mode
Integrated Power Flattening Circuit Reduces Power and Current into Mismatch
TX EN 3
Integrated VRAMP Rejection Filter Eliminates External Components
Applications
Quad-Band GSM/EDGE Handsets
GSM/EDGE Transmitter Line-ups
Portable Battery-Powered Equipment
GSM850/EGSM900/DCS/ PCS Products
GPRS Class 12 Compatible Products
Mobile EDGE/GPRS Data Products
GSM RFIN 7
9 GSM RFOUT
GND 8
Functional Block Diagram
Product Description The RF3189 is a high power, high linearity performance in EDGE mode, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, which is designed to operate either in saturated mode for GMSK signaling or linear mode for 8PSK signaling. The module is designed to be the final amplification stage in a dual-mode GSM/EDGE mobile transmit lineup operating in the 824MHz to 915MHz (low) and 1710MHz to 1910MHz (high) bands (such as a cellular handset). Band selection is controlled by an input on the module which selects either the low or high band. The device is packaged on a 5mmx5mm laminate module with a protective plastic over-mold. The RF3189 features RFMD’s latest integrated power flattening circuit, which significantly reduces current and power variation into load mismatch. The RF3189 provides excellent ESD protection at all the pins. The RF3189 also provides integrated VRAMP rejection filter which improves noise performance and transient spectrum.
Ordering Information RF3189Quad-Band GSM/EDGE/GSM850/EGSM900 /DCS/PCS/Power Amplifier Module
RF3189
RF3189PCBA-41X
Quad-Band GSM/EDGE/GSM850/EGSM900 /DCS/PCS/Power Amplifier Module Power Amplifier Module, 5 Piece Sample Pack Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
GaAs HBT GaAs MESFET InGaP HBT
SiGe BiCMOS Si BiCMOS SiGe HBT
GaAs pHEMT
Si CMOS Si BJT
GaN HEMT RF MEMS LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS100412
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or
[email protected].
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RF3189 Absolute Maximum Ratings Parameter
Rating
Unit
Supply Voltage (VBATT)
-0.5 to +6.0
V
Power Control Voltage (VRAMP)
-0.5 to +3.0
V
Band Select
3.0
V
TX Enable
3.0
V
VMODE
3.0
V
RF - Input Power
10.0
dBm
50
%
Max Duty Cycle Output Load VSWR
Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
10:1
Operating Temperature
-30 to +85
°C
Storage Temperature
-55 to +150
°C
Parameter
Caution! ESD sensitive device.
Min.
Specification Typ.
Max.
Unit
Condition
Recommended Operating Conditions VRAMP/VBIAS VRAMP/VBIAS “High”
1.5
2.2
VRAMP/VBIAS “Low”
0
VRAMP/VBIAS Input Current VRAMP/VBIAS =VRAMP, MAX
V
High Power 8PSK Mode (VMODE =“High”)
0.7
V
Low Power 8PSK Mode (VMODE =“High”)
40
A
VRAMP/VBIAS =VRAMP,MAX
V
GMSK Mode (VMODE =“Low”), Analog Mode
0.25
V
GMSK Mode (VMODE =“Low”), Analog Mode
VMODE “HIGH”
1.5
V
8PSK Mode
VMODE “LOW”
0
0.7
V
GMSK Mode
VMODE Input Current
1
+10
uA
VRAMP/VBIAS =VRAMP, MIN
2.2
VMODE Switch
Band Select Switch BAND_SEL “HIGH”
1.5
V
High Band (DCS1800/PCS1900)
BAND_SEL “LOW”
0
0.7
V
Low Band (GSM850/EGSM900)
BAND_SEL Input Current
1
+10
uA
TX_EN TX_EN “HIGH”
1.5
V
PA “ON”
TX_EN “LOW”
0
0.7
V
PA “OFF”
TX_EN Input Current
1
+10
uA
4.5
V
Performance specified
5.5
V
Functional with performance degraded
10
uA
TX_EN Low
Overall Power Supply VBATT Range
3.2
3.6
3.0 Off Current
RF Impedance LB_RF IN
50
LB_RF OUT
50
HB_RF IN
50
HB_RF OUT
50
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or
[email protected].
DS100412
RF3189 Parameter
Min.
Specification Typ.
Max.
Unit
Condition Nominal test conditions unless otherwise stated. Temp=25 °C, VBATT =3.6V, VMODE =“Low”, Freq=824MHz to 849MHz, 25% Duty Cycle, Pulse Width=1154s, PIN =2dBm, BAND_SEL=“Low”, TX_EN=“High”, VRAMP/VBIAS =VRAMP,MAX
Cellular 850MHz Band GMSK Mode
Operating Frequency Range
824
849
MHz
+4
dBm
-2
+1
Maximum Output Power 1
34.5
35.0
dBm
Maximum Output Power 2
32.5
33
dBm
42
48
%
Input Power Range, PIN
Total Efficiency (PAE) Output Noise Power
-83
Forward Isolation 1 Forward Isolation 2
Temp=25 °C, VBATT =3.6V Temp=85 °C, VBATT =3.2V Pin=+1dBm
-82
dBm
869MHz to 894MHz, f0 =849MHz, POUT
1.5 V PA ON
The Power Down Sequence is the reverse order of the Power On Sequence.
>1.5 V High Band BAND_SEL
<0.7 V Low Band
VMODE
TX_EN 2.2V for max POUT VRAMP/VBIAS
~0.25 V for min POUT
8PSK Power On/Off Sequence 3.2 V to 4.5 V VBATT >1.5 V High Band BAND_SEL
<0.7 V Low Band
<0.7 V Low Power Mode
1. Apply VBATT 2. Apply BAND_SEL 3. Apply High or Low on VRAMP/VBIAS 4. Apply High on VMODE 5. Apply TX_EN 6. Ramp RFIN amplitude for desired output power
>1.5 V 8PSK Mode
The Power Down Sequence is the reverse order of the Power On Sequence.
>1.5 V High Power Mode VRAMP/VBIAS
Power On Sequence:
VMODE >1.5 V PA ON TX_EN
~-1 dBm Low Band, ~-5 dBm High Band for rated POUT
RFIN
Dual Mode Operation MODE
VMODE
GSM
Low
FIXED
8PSK
High
Ramped burst from Variable Gain Amplifier or Source (GSM Burst Ramp Control)
VRAMP/VBIAS
TX ENABLE
Analog voltage that proportionally regulates collector voltage. Controls output power level. (GSM Burst Ramp Control)
High (Normal) Low (Isolation)
RF INPUT
High (Normal) High1 Low (Isolation) 2 Low Note: When VMODE is low (GMSK mode), the voltage on VRAMP/VBIAS is used to regulate the PA collector voltage which directly controls the output power. When VMODE is high (8PSK mode), the PA collector voltage is regulated to 3.6V. The supply for the PA base bias can be selected via the VRAMP/VBIAS pin to optimize current drain for low or high power ranges. 1 2
Normal current consumption for maximum linear output power. Reduced current consumption for improved efficiency at low PCL’s.
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS100412
RF3189 Application Schematic DCS RFIN
1
10 DCS RFOUT
BAND SEL
2
TX EN
3
VBATT
4
Supply Bypass Capacitor VMODE
5
VRAMP / VBIAS
6
GSM RFIN
7
GND
8
Integrated Power Control
GSM RFOUT
DS100412
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RF3189 Evaluation Board Schematic 50 strip
50 strip
DCS RFIN
1
BAND SEL
2
10
DCS OUT
TX EN 3
VBATT+
Integrated Power Control
4 +
C1 68 F
11
GND
5
VMODE R4 0
6 50 strip
0402
VRAMP/VBIAS
7 R5 DNI 0402
GSM RFIN
50 strip
9
GSM OUT
8
J2 Red Banana Receptacle
J3 Black Banana Receptacle
VBATT+
4 3 2 1
J1 4-pin Board-Edge Header Block
BAND SEL R1 100 k 0402
VMODE R2 100 k 0402
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS100412
RF3189 Evaluation Board Layout Board Size 2.0” x 2.0” Board Thickness 0.046”, Board Material Rogers RO4003, Multi-Layer
DS100412
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RF3189 Package Drawing
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS100412
RF3189 PCB Design Requirements PCB Surface Finish The PCB surface finish used for RFMD’s qualification process is electroless nickel, immersion gold. Typical thickness is 3inch to 8inch gold over 180inch nickel. PCB Land Pattern Recommendation PCB land patterns for RFMD components are based on IPC-7351 standards and RFMD empirical data. The pad pattern shown has been developed and tested for optimized assembly at RFMD. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. PCB Metal Land and Solder Mask Pattern
PCB Stencil Pattern
DS100412
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RF3189 Tape and Reel Carrier tape basic dimensions are based on EIA 481. The pocket is designed to hold the part for shipping and loading onto SMT manufacturing equipment, while protecting the body and the solder terminals from damaging stresses. The individual pocket design can vary from vendor to vendor, but width and pitch will be consistent. Carrier tape is wound or placed onto a shipping reel either 330mm (13 inches) in diameter or 178mm (7 inches) in diameter. The center hub design is large enough to ensure the radius formed by the carrier tape around it does not put unnecessary stress on the parts. Prior to shipping, moisture sensitive parts (MSL level 2a-5a) are baked and placed into the pockets of the carrier tape. A cover tape is sealed over the top of the entire length of the carrier tape. The reel is sealed in a moisture barrier ESD bag with the appropriate units of desiccant and a humidity indicator card, which is placed in a cardboard shipping box. It is important to note that unused moisture sensitive parts need to be resealed in the moisture barrier bag. If the reels exceed the exposure limit and need to be rebaked, most carrier tape and shipping reels are not rated as bakeable at 125°C. If baking is required, devices may be baked according to section 4, table 4-1, of Joint Industry Standard IPC/JEDEC J-STD-033. The table below provides information for carrier tape and reels used for shipping the devices described in this document.
Tape and Reel RFMD Part Number
RF3189TR13
Reel Diameter Inch (mm) 13 (330)
Hub Diameter Inch (mm)
Width (mm)
4 (102)
12
Pocket Pitch (mm) 8
Feed Single
Units per Reel 2500
Unless otherwise specified, all dimension tolerances per EIA-481.
Top View Pin 1 Location Sprocket holes toward rear of reel
Part Number YYWW Trace Code
Part Number YYWW Trace Code
Part Number YYWW Trace Code
Part Number YYWW Trace Code
Direction of Feed Figure 1. 5mmx5mm (Carrier Tape Drawing with Part Orientation)
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS100412
