Transcript
polyfet rf devices SA701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 25.0 Watts Single Ended Package Style AA
"Polyfet"TM process
HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.
ROHS COMPLIANT o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 60 Watts
Junction to Case Thermal Resistance
Maximum Junction Temperature
o 2.80 C/W
o 200 C
DC Drain Current
Storage Temperature o o -65 C to 150 C
RF CHARACTERISTICS ( SYMBOL PARAMETER
MIN
Gps
Common Source Power Gain
η
Drain Efficiency
VSWR
TYP
3.5 A
Drain to Source Voltage
Gate to Source Voltage
70 V
70 V
20 V
25.0 WATTS OUTPUT ) MAX
13 85
Load Mismatch Tolerance
Drain to Gate Voltage
20:1
UNITS TEST CONDITIONS dB
Idq = 0.20 A, Vds =
28.0 V, F = 175 MHz
%
Idq = 0.20 A, Vds =
28.0 V, F = 175 MHz
Relative Idq = 0.20 A, Vds = 28.0 V, F =
175 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER
MIN
TYP
MAX
UNITS TEST CONDITIONS V
Ids = 20.00 mA, Vgs = 0V
Bvdss
Drain Breakdown Voltage
Idss
Zero Bias Drain Current
1.0
mA
Vds = 28.0 V, Vgs = 0V
Igss
Gate Leakage Current
1
uA
Vds = 0V Vgs = 30V
Vgs
Gate Bias for Drain Current
5
V
gM
Forward Transconductance
65
2
Ids = 0.10 A, Vgs = Vds
1.2
Mho
Vds = 10V, Vgs = 5V
Rdson
Saturation Resistance
0.85
Ohm
Vgs = 20V, Ids = 2.50 A
Idsat
Saturation Current
7.00
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitance
50.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
3.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitance
32.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:
[email protected] URL:www.polyfet.com
SA701 POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
SA701 POUT VS PIN Freq=175MHz, VDS=28V, Idq=.2A
S1A 1 DIE CAPACITANCE
1000
18.00
35
CAPACITANCE IN PFS
30 16.00 25
100
Pout
20
14.00
Efficiency = 85%
15
Coss
Gain
12.00
10 10.00
Ciss 10
5
Crss
0
1
8.00 0
0.5
1
1.5
2 2.5 3 PIN IN WATTS
3.5
4
4.5
0
5
4
8
12
16
20
24
28
VDS IN VOLTS
IV CURVE
ID & GM VS VGS
S1A 1 DIE IV
S1A 1 DIE ID & GM Vs VG
10.00
Id in amps; Gm in mhos
8 7
ID IN AMPS
6 5 4 3 2
Id
1.00
gM
1
0.10
0 0
2 vg=2v
4
6 Vg=4v
8
10 12 14 VDS IN VOLTS vg=8v Vg=6v
16 0
18
20
0
2
vg=12v
Zin Zout
4
6
8 10 Vgs in Volts
12
14
16
18
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
POLYFET RF DEVICES
.XXX +/-.005 inches
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:
[email protected] URL:www.polyfet.com
