Transcript
SHD126234 SHD126234P SHD126234N SHD126234D
SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 653, REV. G
HERMETIC POWER SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200 C Operating Temperature Applications: Switching Power Supply
Converters
Free-Wheeling Diodes
Polarity Protection Diode
Features: Ultra low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Out Performs 100 Volt Ultrafast Rectifiers Add Prefix C to SHD – For Ceramic Seals (SHDC) Add Suffix SS For JANS Screening
Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Max. Thermal Resistance Max. Junction Temperature Max. Storage Temperature
Symbol VRWM IF(AV) IF(AV) IFSM R JC TJ Tstg
Condition 50% duty cycle, rectangular wave form (Single & Doubler) 50% duty cycle, rectangular wave form (Common Anode & Common Cathode) 8.3 ms, half Sine wave (per leg) (per leg) -
Max. 100 15
Units V A
16
A
75
A
2.82 -65 to +200 -65 to +165
C/W C C
Max. 0.93
Units V
0.84
V
0.1
mA
3.0
mA
500
pF
Electrical Characteristics: Characteristics Max. Forward Voltage Drop
Symbol VF1 VF2
Max. Reverse Current
IR1 IR2
Max. Junction Capacitance
CT
Condition @ 15A, Pulse, TJ = 25 C (per leg) @ 15A, Pulse, TJ = 125 C (per leg) @VR = 100V, Pulse, TJ = 25 C (per leg) @VR = 100V, Pulse, TJ = 125 C (per leg) @VR = 5V, TC = 25 C fSIG = 1MHz, VSIG = 50mV (p-p) (per leg)
2000 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com
[email protected]
SHD126234 SHD126234P SHD126234N SHD126234D
SENSITRON TECHNICAL DATA DATA SHEET 653, REV. G Mechanical Dimensions: In Inches / mm .150 (3.81 Dia. .140 3.56)
.665 (16.89 .645 16.38)
1.132 (28.75 1.032 26.21)
1
2
.045 (1.14 .035 0.89)
1
2
3
1
COMMON ANODE
2 DOUBLER
3
.100(2.54) BSC 2 Places
2
3
3
2
TO-257
Typical Forward Characteristics
PIN 3 ANODE ANODE 2 CATHODE 2 CATHODE
Typical Reverse Characteristics 200 °C
Instantaneous Reverse Current - I R (mA)
101
101
1
.120(3.05) BSC
PINOUT TABLE TYPE PIN 1 PIN 2 SINGLE RECTIFIER CATHODE ANODE DUAL RECTIFIER, COMMON CATHODE (P) ANODE 1 COMMON CATHODE DUAL RECTIFIER, COMMON ANODE (N) CATHODE 1 COMMON ANODE DUAL RECTIFIER, DOUBLER (D) ANODE ANODE/CATHODE Note: The Vf curves shown are for the SD125SCU100 unpackaged die only.
200 °C 175 °C
100
175 °C 100
150 °C 125 °C
10-1
100 °C -2
75 °C
10
50 °C
10-3
25 °C
10-4
125 °C
0
20
40 60 80 100 Reverse Voltage - RV (V)
120
Typical Junction Capacitance 25 °C
10-1
Junction Capacitance - C T (pF)
Instantaneous Forward Current - I F (A)
3
.430 (10.92 .410 10.41)
1
.035 (0.89 .025 0.63) 3 Places
COMMON CATHODE
.200 (5.08 .190 4.82)
.420 (10.67 .410 10.41)
.537 (13.64 .527 13.39)
SINGLE
10-2 0.1
0.2
0.3 0.4 0.5 0.6 0.7 Forward Voltage Drop -FV(V)
0.8
400 300 200 100 0
20
40 60 80 100 Reverse Voltage - RV (V)
120
2000 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com
[email protected]
SENSITRON TECHNICAL DATA DATA SHEET 653, REV. G
SHD126234 SHD126234P SHD126234N SHD126234D
DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
2000 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com
[email protected]
