Transcript
polyfet rf devices SM705 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 150.0 Watts Single Ended Package Style AM
"Polyfet"TM process
HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.
ROHS COMPLIANT o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 230 Watts
Junction to Case Thermal Resistance
Maximum Junction Temperature
o 0.75 C/W
o 200 C
DC Drain Current
Storage Temperature o o -65 C to 150 C
13.5 A
Drain to Gate Voltage
Drain to Source Voltage
Gate to Source Voltage
70 V
70 V
20 V
RF CHARACTERISTICS ( 150.0 WATTS OUTPUT ) SYMBOL PARAMETER
MIN
Gps
Common Source Power Gain
η
Drain Efficiency
VSWR
TYP
MAX
13 70
Load Mismatch Tolerance
20:1
UNITS TEST CONDITIONS dB
Idq = 0.80 A, Vds =
28.0 V, F = 150 MHz
%
Idq = 0.80 A, Vds =
28.0 V, F = 150 MHz
Relative Idq = 0.80 A, Vds = 28.0 V, F =
150 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER
MIN
TYP
MAX
UNITS TEST CONDITIONS V
Ids = 100.00 mA, Vgs = 0V
Bvdss
Drain Breakdown Voltage
Idss
Zero Bias Drain Current
5.0
mA
Vds = 28.0 V, Vgs = 0V
Igss
Gate Leakage Current
1
uA
Vds = 0V Vgs = 30V
Vgs
Gate Bias for Drain Current
5
V
gM
Forward Transconductance
65
2
Ids = 0.50 A, Vgs = Vds
6.0
Mho
Vds = 10V, Vgs = 5V
0.20
Ohm
Vgs = 20V, Ids =12.50 A Vgs = 20V, Vds = 10V
Rdson
Saturation Resistance
Idsat
Saturation Current
35.00
Amp
Ciss
Common Source Input Capacitance
250.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
15.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitance
160.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:
[email protected] URL:www.polyfet.com
SM705 POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
SM705 Pin vs Pout Freq=150MHz, VDS=28V, Idq=1A
S1A 5 DICE CAPACITANCE
1000
Coss
18
200
CAPACITANCE IN PFS
17 160
16
Pout
100
15 120
14 13
80
Gain
12 11
40 Efficiency@165W = 70%
4
6
8
10
Crss
1
9 2
10
10
0 0
Ciss
12
14
16
18
0
20
4
8
12
16
20
24
28
VDS IN VOLTS
P in in W a tts
IV CURVE
ID & GM VS VGS S1A 5 DIE ID & GM Vs VG
S1A 5 DIE IV
100.00
40
Id Id in amps; Gm in mhos
35 30 ID IN AMPS
10.00
25 20 15 10
1.00
gM
5
0.10
0 0
2 vg=2v
4
6 Vg=4v
8
10 12 14 VDS IN VOLTS vg=8v Vg=6v
16 0
18
20 vg=12v
0
2
Zin Zout
4
6
8 10 Vgs in Volts
12
14
16
18
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
POLYFET RF DEVICES
.XXX +/-.005 inches
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:
[email protected] URL:www.polyfet.com
