Transcript
2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
A Microchip Technology Company
Data Sheet
The SST12LP07 is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. Easily configured for high-power applications with good power-added efficiency while operating over the 2.4- 2.5 GHz frequency band, the SST12LP07 has excellent linearity, typically ~2.5% added EVM at 19 dBm output power, while meeting 802.11g spectrum mask at 22 dBm. The SST12LP07 features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin, and is offered in a 16-contact VQFN package.
Features • Low shut-down current (< 0.1 µA)
• High Gain: – Typically 29 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C
• High linear output power: – >26 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 5 – Meets 802.11g OFDM ACPR requirement up to 22 dBm – ~2.5% added EVM up to 19 dBm for 54 Mbps 802.11g signal – Meets 802.11b ACPR requirement up to 22 dBm
• High power-added efficiency/Low operating current for both 802.11g/b applications
• Excellent On-chip power detection – <+/- 0.3dB variation between 0°C to +85°C – <+/- 0.4dB variation with 2:1 VSWR mismatch – <+/- 0.3dB variation Ch1 through Ch14
• 20 dB dynamic range on-chip power detection • Simple input/output matching • Packages available – 16-contact VQFN – 3mm x 3mm
• All non-Pb (lead-free) devices are RoHS compliant
– ~22%/220 mA @ POUT = 22 dBm for 802.11g – ~21%/230 mA @ POUT = 22 dBm for 802.11b
• Single-pin low IREF power-up/down control
Applications
– IREF <2 mA
• WLAN (IEEE 802.11g/b)
• Low idle current – ~70 mA ICQ
• Home RF
• High-speed power-up/down – Turn on/off time (10%- 90%) <100 ns – Typical power-up/down delay with driver delay included <200 ns
• Cordless phones • 2.4 GHz ISM wireless equipment
• High temperature stability – ~1 dB gain/power variation between 0°C to +85°C
©2011 Silicon Storage Technology, Inc.
www.microchip.com
DS75033A
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
A Microchip Technology Company
Data Sheet
Product Description The SST12LP07 is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The SST12LP07 can be easily configured for high-power applications with good power-added efficiency while operating over the 2.4- 2.5 GHz frequency band. This device typically provides 29 dB gain with 22% power-added efficiency @ POUT = 22 dBm for 802.11g and 21% power-added efficiency @ POUT = 22 dBm for 802.11b. The SST12LP07 has excellent linearity, typically ~2.5% added EVM at 19 dBm output power which is essential for 54 Mbps 802.11g/n operation while meeting 802.11g spectrum mask at 22 dBm. The SST12LP07 can also be configured for high-efficiency operation, typically 17 dBm linear 54 Mbps 802.11g output power at 85 mA total power consumption. High-efficiency operation is desirable in embedded applications such as in hand-held units. The SST12LP07 also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin. Ultra-low reference current (total IREF ~2 mA) makes the SST12LP07 controllable by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make the SST12LP07 ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications. The SST12LP07 has an excellent on-chip, single-ended power detector, which features wide-range (~20 dB) with dB-wise linearization and high stability over temperature (< +/-0.3 dB 0°C to +85°C), frequency (<+/-0.3 dB across Channels 1 through 14), and output load (<+/-0.4 dB with 2:1 output VSWR all phases). The excellent on-chip power detector provides a reliable solution to board-level power control. The SST12LP07 is offered in a 16-contact VQFN package. See Figure 2 for pin assignments and Table 1 for pin descriptions.
©2011 Silicon Storage Technology, Inc.
DS75033A
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
A Microchip Technology Company
Data Sheet
VCC1
NC
VCCb
VCC2
Functional Blocks
16
15
14
13
NC
1
12 NC
RFIN
2
11 RFOUT
NC
3
10 NC Bias Circuit
VREF
4
9 5
6
7
8
NC
NC
NC
NC
Det
1321 B1.0
Figure 1: Functional Block Diagram
©2011 Silicon Storage Technology, Inc.
DS75033A
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
A Microchip Technology Company
Data Sheet
NC
VCC1
NC
VCCb
VCC2
Pin Assignments
16
15
14
13 12 NC
1
Top View RFIN
2
NC
3
VREF
(contacts facing down)
11 RFOUT 10 NC
RF and DC GND 0
4
5
6
7
8
9 NC
NC
NC
NC
Det 1321 P1.0
Figure 2: Pin Assignments for 16-contact VQFN
Pin Descriptions Table 1: Pin Description Symbol
Pin No.
Pin Name
Type1
Function
GND
0
Ground
The center pad should be connected to RF ground with several low inductance, low resistance vias
NC
1
No Connection
Unconnected pin
RFIN
2
NC
3
VREF
4
NC
5
No Connection
Unconnected pin
NC
6
No Connection
Unconnected pin
NC
7
No Connection
Unconnected pin
Det
8
NC
9
No Connection
NC
10
No Connection
RFOUT
11
I No Connection
RF input, DC decoupled Unconnected pin
I
O
1st and 2nd stage idle current control
On-chip power detector Unconnected pin Unconnected pin
O
RF output
NC
12
No Connection
VCC2
13
Power Supply
PWR
Power supply, 2nd stage
Unconnected pin
VCCb
14
Power Supply
PWR
Power supply, bias circuit
NC
15
No Connection
VCC1
16
Power Supply
Unconnected pin PWR
Power supply, 1st stage T1.0 75033
1. I=Input, O=Output
©2011 Silicon Storage Technology, Inc.
DS75033A
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
A Microchip Technology Company
Data Sheet
Electrical Specifications The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and current specifications. Refer to Figures 3 through 11 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Input power to pin 2 (PIN). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm Average output power (POUT)1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +26 dBm Supply Voltage at pins 13, 14, and 16 (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.0V Reference voltage to pin 4 (VREF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.3V DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds 1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the maximum rating of average output power could cause permanent damage to the device.
Table 2: Operating Range Range
Ambient Temp
VDD
Industrial
-40°C to +85°C
3.3V T2.1 75033
Table 3: DC Electrical Characteristics Symbol
Parameter
Min. Typ Max. Unit Test Conditions
VCC
Supply Voltage at pins 13, 14, 16
ICC
Supply Current
3.0
3.3
3.6
V
for 802.11g, 22 dBm
220
mA
for 802.11b, 22 dBm
230
mA
70
mA
ICQ
Idle current for 802.11g to meet EVM <2.5% @ 19 dBm
IOFF
Shut down current
VREG
Reference Voltage for, with 110 resistor
2.7 5
2.8 5
0.1
µA
2.95
V T3.0 75033
©2011 Silicon Storage Technology, Inc.
DS75033A
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
A Microchip Technology Company
Data Sheet
Table 4: AC Electrical Characteristics for Configuration Symbol
Parameter
Min.
FL-U
Frequency range
2400
POUT
Output power @ PIN = -6 dBm 11b signals @ PIN = -7 dBm 11g signals
Typ
Max.
Unit
2485
MHz
22
dBm
21 28
dBm
G
Small signal gain
29
dB
GVAR1
Gain variation over band (2400~2485 MHz)
GVAR2
Gain ripple over channel (20 MHz)
ACPR
Meet 11b spectrum mask
22
dBm
Meet 11g OFDM 54 Mbps spectrum mask
22
dBm
±0.5 0.2
dB dB
Added EVM @ 19 dBm output with 11g OFDM 54 Mbps signal
2.5
%
2f, 3f, 4f, 5f
-40
dBc
Harmonics at 22 dBm, without external filters
T4.2 75033
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DS75033A
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
A Microchip Technology Company
Data Sheet
Typical Performance Characteristics Test Conditions: VCC = 3.3V, TA = 25°C, unless otherwise specified S11 versus Frequency
S12 versus Frequency 0
0
-10
-5
-20
S12 (dB)
S11 (dB)
-10 -15 -20
-30 -40 -50 -60
-25 -30 0.0
-70
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
-80 0.0
9.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
7.0
8.0
9.0
Frequency (GHz)
Frequency (GHz)
S22 versus Frequency
S21 versus Frequency 40
0
30
-5
S22 (dB)
S21 (dB)
20 10 0 -10
-10 -15 -20
-20 -25
-30 -40 0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
-30 0.0
1.0
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
Frequency (GHz)
1321 F3.0
Figure 3: S-Parameters
©2011 Silicon Storage Technology, Inc.
DS75033A
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
A Microchip Technology Company
Data Sheet
Typical Performance Characteristics Test Conditions: VCC = 3.3V, TA = 25°C, 54 Mbps 802.11g OFDM signal EVM versus Output Power
EVM (%)
10 9
Freq=2.412 GHz
8
Freq=2.442 GHz
7
Freq=2.484 GHz
6 5 4 3 2 1 0 9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Output Power (dBm) 1321 F4.0
Figure 4: EMV versus Output Power
Power Gain versus Output Power
Power Gain (dB)
40 38
Freq=2.412 GHz
36
Freq=2.442 GHz Freq=2.484 GHz
34 32 30 28 26 24 22 20 9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Output Power (dBm) 1321 F5 0
Figure 5: Power Gain versus Output Power
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DS75033A
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
A Microchip Technology Company
Data Sheet
Supply Current versus Output Power 280
Supply Current (mA)
260
Freq=2.412 GHz
240
Freq=2.442 GHz Freq=2.484 GHz
220 200 180 160 140 120 100 80 9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Output Power (dBm) 1321 F6.0
Figure 6: Total Current Consumption for 802.11g operation versus Output Power
PAE (%)
PAE versus Output Power 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0
Freq=2.412 GHz Freq=2.442 GHz Freq=2.484 GHz
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Output Power (dBm) 1321 F7.0
Figure 7: PAE versus Output Power
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DS75033A
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
A Microchip Technology Company
Data Sheet
10 Freq = 2.412 GHZ
0
Freq = 2.442 GHz Freq = 2.484 GHz
Amplitude (dB)
-10 -20 -30 -40 -50 -60 -70 2.3 5
2.4 0
2 .45
2 .50
2 .5 5
Frequency (GHz) 1321 F8.0
Figure 8: 802.11g Spectrum Mask at 22 dBm
Detector Voltage versus Output Power 1.7 Freq = 2.412 GHz (25°C) Freq = 2.442 GHz (25°C) Freq = 2.484 GHz (25°C) Freq = 2.412 GHz (0°C) Freq = 2.442 GHz (0°C) Freq = 2.484 GHz (0°C) Freq = 2.412 GHz (85°C) Freq = 2.442 GHz (85°C) Freq = 2.484 GHz (85°C)
1.6
Detector Voltage (V)
1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Output Power (dBm) 1321 F9.1
Figure 9: Detector Characteristics Over Temperature and Over Frequency
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DS75033A
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
A Microchip Technology Company
Data Sheet
Detector Voltage versus Output Power 1.7 Freq = 2.442 GHz (0°C) Freq = 2.442 GHz (25°C) Freq = 2.442 GHz (85°C) Freq = 2.442 GHz (Max) Freq = 2.442 GHz (Min)
1.6
Detector Voltage (V)
1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Output Power (dBm) 1321 F10.1
Figure 10: CH7 Detector Characteristics Over Temperature with 2:1 Output VSWR All Phases
Test Conditions: VCC = 3.3V, TA = 25°C, 1 Mbps 802.11B CCK signal 10 Freq = 2.412 GHZ
0
Freq = 2.442 GHz
Amplitude (dB)
-10
Freq = 2.484 GHz
-20 -30 -40 -50 -60 -70 -80 2.35
2. 40
2.45
2. 50
2.55
Frequency (GHz) 1321 F11.0
Figure 11:802.11B Spectrum Mask at 22 dBm
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DS75033A
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
A Microchip Technology Company
Data Sheet
10 µF VCC R2 = 50 Ω
0.1 µF 6.8 nH 0.1 µF 0.1 µF
16
47pF
15
14
13
1
12
2
11
50Ω / 60–70 mil
50 Ω / 0–20 mil
RFIN
47 pF RFOUT 2.0 pF
1.5 nH
3
10 Bias Circuit
R1 = 110 Ω
4
VREG
9
22 pF
5
6
8
7
Det 10 pF
Suggested operation conditions: 1. VCC = 3.3V 2. Center slug to RF ground 3. VREG = 2.85V with R1=110Ω Suggested for robustness under input overdrive condition when working with some transceivers. 1321 Schematic 1.1
Figure 12:Typical Schematic for High-Power/High-Efficiency 802.11b/g Applications
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
A Microchip Technology Company
Data Sheet
Product Ordering Information SST
12 LP XX XX
07 XX
-
QVCE XXXX Environmental Attribute E1 = non-Pb contact (lead) finish Package Modifier C = 16 contact Package Type QV = VQFN Product Family Identifier Product Type P = Power Amplifier Voltage L = 3.0-3.6V Frequency of Operation 2 = 2.4 GHz Product Line 1 = RF Product
1. Environmental suffix “E” denotes non-Pb solder. SST non-Pb solder devices are “RoHS Compliant”.
Valid combinations for SST12LP07 SST12LP07-QVCE
SST12LP07 Evaluation Kits SST12LP07-QVCE-K Note:Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations.
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
A Microchip Technology Company
Data Sheet
Packaging Diagrams TOP VIEW
SIDE VIEW
BOTTOM VIEW See notes 2 and 3
0.2
Pin 1
Pin 1 1.7
3.00 ± 0.075 1.7
0.5 BSC
0.075 0.45 0.35
0.05 Max
3.00 ± 0.075
1.00 0.80
0.30 0.18 1mm 16-vqfn-3x3-QVC-2.0
Note: 1. Complies with JEDEC JEP95 MO-220J, variant VEED-4 except external paddle nominal dimensions. 2. From the bottom view, the pin 1 indicator ma y be either a 45-degree chamfer or a half-circle notch. 3. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. Untoleranced dimensions are nominal target dimensions. 5. All linear dimensions are in millimeters (max/min).
Figure 13:16-contact Very-thin Quad Flat No-lead (VQFN) SST Package Code: QVC
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
A Microchip Technology Company
Data Sheet
Table 5:Revision History Revision 00 01 02 A
Description
Date
• •
Initial release of data sheet Updated document status from Preliminary Specifications to Data Sheet
May 2006
• • • •
Updated “Contact Information” on page 14 Applied new document format Released document under letter revision system Updated spec number from S71321 to DS75033
Mar 2009
Mar 2008
Oct 2011
ISBN:978-1-61341-701-0 © 2011 Silicon Storage Technology, Inc–a Microchip Technology Company. All rights reserved. SST, Silicon Storage Technology, the SST logo, SuperFlash, MTP, and FlashFlex are registered trademarks of Silicon Storage Technology, Inc. MPF, SQI, Serial Quad I/O, and Z-Scale are trademarks of Silicon Storage Technology, Inc. All other trademarks and registered trademarks mentioned herein are the property of their respective owners. Specifications are subject to change without notice. Refer to www.microchip.com for the most recent documentation. For the most current package drawings, please see the Packaging Specification located at http://www.microchip.com/packaging. Memory sizes denote raw storage capacity; actual usable capacity may be less. SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of Sale. For sales office locations and information, please see www.microchip.com.
Silicon Storage Technology, Inc. A Microchip Technology Company www.microchip.com
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