Transcript
MITSUBISHI THYRISTOR MODULES
TM90DZ/CZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE
TM90DZ/CZ-M,-H
Average on-state current ............ 90A Repetitive peak reverse voltage ........ 400/800V VDRM Repetitive peak off-state voltage ........ 400/800V DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
no t fo Re rN c o ew m m De e n sig d n
• IT (AV) • VRRM •
• • •
APPLICATION DC motor control, NC equipment, AC motor control, Contactless switches, Electric furnace temperature control, Light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
93.5
(DZ)
80
K2 G2
2–φ6.5
A1K2 CR1
K1
20
K1 G1
3–M5
(CZ)
K2 G2
Tab#110, t=0.5
A1
CR1
K1K2
A2
K1 G1
LABEL
30
9
CR2
21
20
A2
CR2
G1
6.5
17.5
K1
26
G2
12.5
K2
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM90DZ/CZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS Symbol
Voltage class
Parameter
M
H
Unit
Repetitive peak reverse voltage
400
800
V
Non-repetitive peak reverse voltage
480
960
V
VR (DC)
DC reverse voltage
320
640
V
VDRM
Repetitive peak off-state voltage
400
800
V
VDSM
Non-repetitive peak off-state voltage
480
960
V
VD (DC)
DC off-state voltage
320
640
V
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VRRM VRSM
Symbol
Conditions
Parameter
Ratings
Unit
140
A
90
A
IT (RMS)
RMS on-state current
IT (AV)
Average on-state current
Single-phase, half-wave 180° conduction, TC=86°C
ITSM
Surge (non-repetitive) on-state current
One half cycle at 60Hz, peak value
1800
A
I2t
I2t for fusing
Value for one cycle of surge current
1.4 × 104
A2s
di/dt
Critical rate of rise of on-state current
VD=1/2VDRM, IG=1.0A, Tj=125°C
100
A/µs
PGM
Peak gate power dissipation
5.0
W
PG (AV)
Average gate power dissipation
0.5
W
VFGM
Peak gate forward voltage
10
V
VRGM
Peak gate reverse voltage
5.0
V
IFGM
Peak gate forward current
2.0
A
Tj
Junction temperature
–40~+125
°C
Tstg
Storage temperature
–40~+125
°C
Viso
Isolation voltage
Charged part to case
Main terminal screw M5
—
Mounting torque
Mounting screw M6
—
Weight
Typical value
2500
V
1.47~1.96
N·m
15~20
kg·cm
1.96~2.94
N·m
20~30
kg·cm
160
g
ELECTRICAL CHARACTERISTICS Symbol
Test conditions
Parameter
Limits
Min.
Typ.
Max.
Unit
IRRM
Repetitive peak reverse current
Tj=125°C, VRRM applied
—
—
15
mA
IDRM
Repetitive peak off-state current
Tj=125°C, VDRM applied
—
—
15
mA
VTM
On-state voltage
Tj=125°C, ITM=270A, instantaneous meas.
—
—
1.3
V
dv/dt
Critical rate of rise of off-state voltage
Tj=125°C, VD=2/3VDRM
500
—
—
V/µs
VGT
Gate trigger voltage
Tj=25°C, VD=6V, RL=2Ω
—
—
3.0
V
VGD
Gate non-trigger voltage
Tj=125°C, VD=1/2VDRM
0.25
—
—
V
IGT
Gate trigger current
Tj=25°C, VD=6V, RL=2Ω
15
—
100
mA
Rth (j-c)
Thermal resistance
Junction to case (per 1/2 module)
—
—
0.3
°C/ W
Rth (c-f)
Contact thermal resistance
Case to fin, conductive grease applied (per 1/2 module)
—
—
0.2
°C/ W
Insulation resistance
Measured with a 500V megohmmeter between main terminal and case
10
—
—
MΩ
—
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM90DZ/CZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE
PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC
10 3 7 5 3 2
RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT
Tj=125°C
SURGE (NON-REPETITIVE) ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
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2000
1600
10 2 7 5 3 2
1200
10 1 7 5 3 2 10 0 0.4
0.8
1.2
1.6
2.0
800
400 0
2.4
1
2 3
ON-STATE VOLTAGE (V)
0.20 0.15 0.10 0.05
0 10 –3 2 3 5 7 10 –2 2 3 5 7 10 –1 2 3 5 7 10 0
LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE)
130
180°
120°
60°
90°
θ=30°
60
PER SINGLE ELEMENT
120
40
PER SINGLE ELEMENT
CASE TEMPERATURE (°C)
AVERAGE ON-STATE POWER DISSIPATION (W)
0.25
MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE HALFWAVE)
80
θ 360° RESISTIVE, INDUCTIVE LOAD
110 100 90 80 70
θ=30°
60° 90° 120° 180°
60
20 0
0.30
TIME (s)
RESISTIVE, INDUCTIVE LOAD
100
0.35
GATE CURRENT (mA)
θ 360°
120
TRANSIENT THERMAL IMPEDANCE (°C/W)
IFGM=2.0A
GATE VOLTAGE (V)
VFGM=10V
140
50 70100
MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 710 1 0.40
10 1 PGM=5.0W 7 5 VGT=3.0V PG(AV)= 3 0.50W 2 I GT = 10 0 100mA 7 5 Tj=25°C 3 2 VGD=0.25V 10 –1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4
160
20 30
CONDUCTION TIME (CYCLES AT 60Hz)
GATE CHARACTERISTICS
4 3 2
5 7 10
0
20
40
60
80
AVERAGE ON-STATE CURRENT (A)
100
50
0
20
40
60
80
100
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM90DZ/CZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE
MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) DC 270°
130
180°
120
120° 90°
100
60°
80
θ=30°
60
θ 360°
40 20
PER SINGLE ELEMENT
200
40
60
100
0
130
°
30
40
PER SINGLE MODULE
20
60
80 100 120 140 160
40
80
120
160
110 105
θ
100
θ
95
360°
90
80
200
θ=30° 60° 90° 120° 180°
115
RESISTIVE, INDUCTIVE LOAD
85
0
40
PER SINGLE MODULE
80
120
240
180°
RESISTIVE, INDUCTIVE LOAD
200 160
120°
60°
90°
θ=30°
120 80 40
CASE TEMPERATURE (°C) (PER SINGLE MODULE)
125
θ θ 360°
θ θ 360°
120 115
RESISTIVE, INDUCTIVE LOAD
110 105 100 95 90
θ=30°
85
0
40
80
120
160
DC OUTPUT CURRENT (A) (PER TWO MODULES)
200
LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) 130
320
280
160
RMS ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED)
ON-STATE POWER DISSIPATION (W) (PER SINGLE MODULE)
40
120
RMS ON-STATE CURRENT (A)
0
20
125
60
0
θ=30° 60° 90° 180° 270° DC 120°
LIMITING VALUE OF THE RMS ON-STATE CURRENT (SINGLE PHASE FULLWAVE AC)
80
0
70
MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE FULLWAVE AC)
RESISTIVE, INDUCTIVE LOAD
120
80
AVERAGE ON-STATE CURRENT (A)
360°
140
90
AVERAGE ON-STATE CURRENT (A)
θ
160
RESISTIVE, INDUCTIVE LOAD
100
50
80 100 120 140 160
θ
180
AVERAGE ON-STATE POWER DISSIPATION (W)
20
CASE TEMPERATURE (°C)
0
θ 360°
110
60
18 1 0° 60 90 20° ° °
0
RESISTIVE, INDUCTIVE LOAD
PER SINGLE ELEMENT
120
CASE TEMPERATURE (°C)
140
θ=
AVERAGE ON-STATE POWER DISSIPATION (W)
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160
LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE)
200
80
0
40
60° 90° 120° 180°
80
120
160
200
DC OUTPUT CURRENT (A) (PER TWO MODULES)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM90DZ/CZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE
200
LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE PHASE FULLWAVE RECTIFIED) 130
90° 120°
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ON-STATE POWER DISSIPATION (W) (PER SINGLE MODULE)
MAXIMUM ON-STATE POWER DISSIPATION (THREE PHASE FULLWAVE RECTIFIED)
120
60°
160 140
θ=30°
120 100
θ 360°
80 60
RESISTIVE, INDUCTIVE LOAD
40 20 0
0
40
80 120 160 200 240 280 320
DC OUTPUT CURRENT (A) (PER THREE MODULES)
CASE TEMPERATURE (°C) (PER SINGLE MODULE)
180
θ 360°
110
RESISTIVE, INDUCTIVE LOAD
100 90
θ=30°
80
60° 90° 120°
70 60 50
0
40
80 120 160 200 240 280 320
DC OUTPUT CURRENT (A) (PER THREE MODULES)
Feb.1999
