Datasheet For Vl366s3253

Transcript

Product Specifications PART NO: VL366S3253-GAS/GHS/GLS REV: 1.3 General Information 256MB 32Mx64 SDRAM PC100/PC133 UNBUFFERED 168 PIN DIMM Description: The VL366S3253 is a 32M X 64 Synchronous Dynamic RAM high density memory module. This memory module consists of 8 CMOS 32Mx8 bit with 4 banks Synchronous DRAMs in TSOP-II 400 mil packages and a 2K EEPROM in 8-pin TSSOP package. This module is a 168-pin Dual In-line Memory Module and is intended for mounting into connector sockets. Decoupling capacitors are mounted on the printed circuit board for each SDRAM. Features: • Unbuffered 8 byte SDRAM 168pin DIMM • High Speed - 100MHz, 133MHz , CL2, CL3 • Burst Mode Operation • Auto & Self refresh Capability (8192 Cycles/64ms) • LVTTL compatible inputs and outputs • Single 3.3V ±0.3 V power supply • 13/10/4 Addressing (Row/Column/Bank) • MRS cycle with address key programs • EPROM Serial Presence Detect • Gold (Au) contacts • Lead-free/RoHS compliant • PCB height: 1150 (mil) , single sided component Order Information: VL366S3253-GA S X Pin Name Function A0-A12 Address inputs B A 0, B A 1 Bank Select Address DQ0-DQ63 Data Input/Output C LK 0, C LK 1, C LK 2, C LK 3 Clock Input C KE0 Clock Enable Input C S 0#, C S 2# Chip Select Input RAS# Row Address Strobe C AS# Column Address Input WE# Write Enable DQM0-DQM7 Data input/output mask VD D Power Supply (3.3V) VSS Ground *VREF Power Supply for Reference SD A Serial Data Input/Output SC L SPD Clock Input SA0 ~ SA2 Address in EEPROM NC No Connect * These pins are not used in this module. DRAM DIE (Option) DRAM MANUFACTURER S -SAMSUNG MODULE SPEED GA: PC133 @ CL3 GH: PC100 @ CL2 GL: PC100 @ CL3 VL: Lead-free/RoHS Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688 Tel: 949-888-2444 Fax: 949-888-2445 PAGE 1 OF 8 Product Specifications PART NO: VL366S3253-GAS/GHS/GLS REV: 1.3 Pin Configuration Pin Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 Front Side VSS DQ0 DQ1 DQ2 DQ3 V DD DQ4 DQ5 DQ6 DQ7 DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 V DD DQ14 DQ15 NC NC VSS NC NC V DD WE# DQM0 DQM1 CS0# NC VSS A0 A2 A4 A6 A8 A10/AP BA1 V DD V DD CLK0 Pin Number 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 Pin Number 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 Front Side VSS NC CS2# DQM2 DQM3 NC V DD NC NC NC NC VSS DQ16 DQ17 DQ18 DQ19 V DD DQ20 NC NC NC VSS DQ21 DQ22 DQ23 VSS DQ24 DQ25 DQ26 DQ27 V DD DQ28 DQ29 DQ30 DQ31 VSS CLK2 NC NC SDA SCL V DD Back Side VSS DQ32 DQ33 DQ34 DQ35 V DD DQ36 DQ37 DQ38 DQ39 DQ40 VSS DQ41 DQ42 DQ43 DQ44 DQ45 V DD DQ46 DQ47 NC NC VSS NC NC V DD CAS# DQM4 DQM5 NC RAS# VSS A1 A3 A5 A7 A9 BA0 A11 V DD CLK1 A12 Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688 Tel: 949-888-2444 Fax: 949-888-2445 PAGE 2 OF 8 Pin Number 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 Back Side VSS CKE0 NC DQM6 DQM7 NC V DD NC NC NC NC VSS DQ48 DQ49 DQ50 DQ51 V DD DQ52 NC NC NC VSS DQ53 DQ54 DQ55 VSS DQ56 DQ57 DQ58 DQ59 V DD DQ60 DQ61 DQ62 DQ63 VSS CLK3 NC SA0 SA1 SA2 V DD Product Specifications PART NO: VL366S3253-GAS/GHS/GLS REV: 1.3 Functional Block Diagram CS0# DQM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQM4 DQM I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 CS# DQM I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 CS# DQM I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 CS# DQM I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 CS# DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 U0 DQM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 U1 DQM CS# I/O0 I/O1 I/O2 U5 I/O3 I/O4 I/O5 I/O6 I/O7 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 U2 DQM I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 CS# DQM I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 CS# U6 DQM7 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 U3 RAS# SDRAM U0 ~ U7 CAS# SDRAM U0 ~ U7 WE# SDRAM U0 ~ U7 CKE0 SDRAM U0 ~ U7 10 Ohm CLK0 U4 U1 U5 Serial PD SCL SDA A0 A1 A2 SA0 SA1 SA2 WP 47K 3.3pF 10 Ohm U2 Every DQ pin of SDRAM 10 Ohm CLK2 To all SDRAMs VSS U6 10 Ohm CLK1/3 U3 VDD Two 0.1uF Capacitors per each SDRAM U7 U0 SDRAM U0 ~ U7 A0 ~ A12, BA0 & 1 DQn U4 DQM6 DQM3 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 CS# DQM5 CS2# DQM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQM I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 U7 3.3pF Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688 Tel: 949-888-2444 Fax: 949-888-2445 PAGE 3 OF 8 10pF Product Specifications PART NO: VL366S3253-GAS/GHS/GLS REV: 1.3 Absolute Maximum Ratings Parameter Symbol Value Unit VIN, VOUT -1.0 ~ 4.6 V VDD, VDDQ -1.0 ~ 4.6 V TSTG -55 ~ +150 Power dissi pation PD 8 W Short circuit current IOS 50 mA Voltage on any pin relative to Vss Voltage on VDD supply relative to Vss Storage temperature 0 C Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating conditi on. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. R ecommended D C Operating C onditions (TA = 00C to +700C) Parameter Symbol Min Typ Max U nit VDD,VDDQ 3.0 3.3 3.6 V Input hi gh voltage VIH 2.0 3.0 VDDQ+0.3 V 1 Input low voltage VIL -0.3 0 0.8 V 2 Output hi gh voltage VOH 2.4 - - V IOH = -2mA Output low voltage VOL - - 0.4 V IOL = 2mA Input leakage current (Inputs) IIL -8 - 8 uA 3 Input leakage current (I/O pins) IIL -1.5 - 1.5 uA 3,4 Supply voltage N ote Notes: 1. VIH (max) = 5.6V AC. The overshoot voltage durati on is <= 3ns. 2. VIL (mi n) = 2.0V AC . The undershoot voltage durati on is <= 3ns. 3. Any i nput 0V <= VIN <= VDDQ. 4.D OUT i s desabled, 0V <= VOUT <= VDDQ. Capacitance (TA = 250C, f = 1MHz, VDD = 3.3V) Parameter Symbol Min Max Unit Input capacitance (A0 ~ A12, BA0 ~ BA1) C IN1 30 40 pF Input capacitance (RAS#, CAS#, WE#) CIN2 30 40 pF Input capacitance (CKE0) CIN3 30 40 pF Input capacitance (CLK0, CLK2) CIN4 25 30 pF Input capacitance (CS0#, CS2#) CIN5 16 25 pF Input capacitance (DQM0 ~ DQM7) CIN6 8 10 pF Data input/output capacitance (DQ0 ~ DQ63) COUT 6 8 pF Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688 Tel: 949-888-2444 Fax: 949-888-2445 PAGE 4 OF 8 Product Specifications PART NO: DC Characteristics VL366S3253-GAS/GHS/GLS REV: 1.3 (Recommended operation condition unless otherwise noted, TA = 00C to +700C) Version Parameter Operating current (One bank active) Symbol ICC1 Precharge standby current in power-down mode Active standby current in non power-down mode (One bank active) Burst length = 1 tRC >= tRC(min) IOL = 0 mA -GA -GH -GL 720 720 720 Unit Note mA 1 ICC2P CKE <= VIL(max), tCC = 10ns 16 mA ICC2PS CKE & CLK <=VIL(max), tcc = 00 16 mA ICC2N CKE >= VIH (min), CS# >= VIH (min), tCC = 10ns Input signals are changed one time during 20ns 160 mA ICC2NS CKE >= VIH(min), CLK <= VIL(max), tcc = oo Input signals are stable 80 mA ICC3P CKE <= VIL(max), tcc = 10ns 48 mA ICC3PS CKE & CLK <= VIL(max), tcc = 00 48 mA ICC3N CKE >= VIH(min), CS# >= VIH(min), tcc = 10ns Input signals are changed one time during 20ns 240 mA ICC3NS CKE >= VIH(min), CLK <= VIL (max), tcc = 00 Input signals are stable 200 mA Precharge standby current in non power-down mode Active standby current in powerdown mode Test Condion Operating current (Burst mode) ICC4 IOL = 0 mA Page burst 2 Banks actived tCCD = 2CLKs 800 880 800 mA 1 Refresh current ICC5 tRC >= tRC(min) 1520 1600 1520 mA 2 Self refresh current ICC6 CKE <= 0.2V 24 Note: 1. Measured with outputs open. 2.Refresh period is 64ms. Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688 Tel: 949-888-2444 Fax: 949-888-2445 PAGE 5 OF 8 mA Product Specifications PART NO: VL366S3253-GAS/GHS/GLS AC Operating Test Conditions REV: 1.3 (VDD = 3.3V, TA = 00C to +700C) Parameter AC input levels (VIH/VIL) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Value Unit 2.4/0.4 V 1.4 V tr/tf = 1/1 ns 1.4 V See Fig.2 3.3V Vtt=1.4V 1200 50 VOH (DC)=2.4V,IOH=-2mA VOL!(DC)=0.4V,IOL=2mA Output 870 Output Z0!=!50 50pF 50pF (Fig.1)DC output load circuit (Fig.2) AC output load circuit Operating AC Parameter Version Parameter Symbol -GA -GH -GL U nit N ote Row acti ve to row acti ve delay tRRD(mi n) 15 20 20 ns 1 RAS# to C AS# delay tRCD(mi n) 20 20 20 ns 1 Row precharge ti me tRP(mi n) 20 20 20 ns 1 tRAS(mi n) 45 50 50 ns 1 Row acti ve ti me tRAS(max) Row cycle ti me tRC(mi n) Last data i n to row precharge tRDL(mi n) Last data i n to Acti ve delay 100 65 70 us 70 ns 1 2 C LK 2 tDAL(mi n) 2 C LK + tRP - Last data i n to new col. addrees delay tCDL(mi n) 1 C LK 1 Last data i n to burst stop tBDL(mi n) 1 C LK 2 C ol. address to col. address delay tCCD(mi n) 1 C LK 2 C AS Latency = 3 2 C LK 3 C AS Latency = 2 1 ea 4 Number of vali d output data Notes: 1. The mi ni mum number of clock cycles i s determi ned by di vi di ng the mi ni mum ti me requi red wi th clock cycle ti me and then roundi ng off to the next hi gher i nteger. 2. Mi ni mum delay i s requi red to complete wri te. 3. All parts allow every cycle column address change. 4. In case of row precharge i nterrupt, auto precharge and read burst stop. Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688 Tel: 949-888-2444 Fax: 949-888-2445 PAGE 6 OF 8 Product Specifications PART NO: VL366S3253-GAS/GHS/GLS REV: 1.3 Operating AC Parameter -GA Parameter -GH -GL Symbol Min C AS latency = 2 - C AS latency = 3 Max 1000 tCC C LK to vali d output delay Min 7.5 C AS latency = 3 C LK cycle ti me Max Min C AS latency = 3 Output data hold ti me 10 1000 ns 1 ns 1,2 ns 2 - 5.4 - 6 - 6 - 3 - 3 - 3 - tOH C AS latency = 2 N ote 10 1000 tSAC C AS latency = 2 U nit Max C LK hi gh pulse wi dth tCH 2.5 3 3 ns 3 C LK low pulse wi dth tCL 2.5 3 3 ns 3 Input setup ti me tSS 1.5 2 2 ns 3 Input hold ti me tSH 0.8 1 1 ns 3 C LK to output i n Low-Z tSLZ 1 1 1 ns 2 C AS latency = 3 C LK to output i n Hi -z 5.4 - 6 - 6 - tSHZ C AS latency = 2 ns Notes: 1. Parameters depend on programmed C AS latency. 2. If clock ri si ng ti me i s longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed i nput ri se and fall ti me (tr & tf) = 1ns. i f tr & tf i s longer than 1ns, transi ent ti mecompensati on should be consi dered, i .e. ,[(tr + tf)/2-1]ns should be added to the parameter. Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688 Tel: 949-888-2444 Fax: 949-888-2445 PAGE 7 OF 8 Product Specifications PART NO: VL366S3253-GAS/GHS/GLS REV: 1.3 Package Dimensions Units : Inches (Millimeters) 5.250 (133.350) 2X FULL RADIUS 2X 0.157 ± 0.004 (4.000 ± 0.100 ) B A 2X 0.118DIA ± 0.004 (3.000DIA ± 0.100) 0.250 (6.350) 0.350 (8.890) C 0.250 (6.350) 1.450 (36.830) 0.450 (11.430) 0.100 Min (2.540 Min) 2X 0.700 (17.780) 2X 0.145 (3.683) 2X 0.040 (1.016) 2X R 0.050+0.004 (R 1.27+0.100) 2X 0.080 (2.032) 1.150 (29.21) 2X 0.250 (6.350) 2X 0.089 (2.26) 5.014 (127.350) 2X 0.118 (3.000) 2.150 (54.61) 4.550 (115.57) 0.130Max (3.302Max) 0.157 Min FULL RADIUS 0.050 ± 0.0039 (1.270 ± 0.100) 0.100 Min 0.250 (6.350 ) 0.125 (3.175) 0.123 ± 0.005 (3.125 ± 0.125) 0.079 ± 0.004 (2.000 ± 0.100) Detail A (2.540 Min) FULL RADIUS 0.250 (6.350 ) 0.164 (4.175) (4.00 Min) 2.507 (63.675) 0.039 ± 0.002 (1.000 ± 0.050) 0.123 ± 0.005 (3.125 ± 0.125) 0.079 ± 0.004 (2.000 ± 0.100) Detail B 0.008 ± 0.006 (0.200 ± 0.150) 0.050 (1.270 ) Detail C Tolerances : ± .005(.13) unless otherwise specified Revision History: Date Rev. P ag e 09/23/2010 1.3 All C h an g es Update datasheet Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688 Tel: 949-888-2444 Fax: 949-888-2445 PAGE 8 OF 8