Transcript
Product Specifications PART NO:
VL366S3353-GAS/GHS/GLS
REV: 1.3
General Information 256MB 32Mx64 SDRAM PC100/PC133 UNBUFFERED 168 PIN DIMM Description:
The VL366S3353 is a 32M X 64 Synchronous Dynamic RAM high density memory module. This memory module consists of eight CMOS 32Mx8 bit with 4 banks Synchronous DRAMs in TSOP-II 400 mil packages and a 2K EEPROM in 8-pin TSSOP package. This module is a 168-pin Dual In-line Memory Module and is intended for mounting into connector sockets. Decoupling capacitors are mounted on the printed circuit board for each SDRAM.
Features: • Unbuffered 8 byte SDRAM 168pin DIMM • High Speed - 100/133MHz CL2/ CL3 • Burst Mode Operation • Auto & Self refresh Capability (8192 Cycles/64ms) • LVTTL compatible inputs and outputs • Single 3.3V ±0.3 V power supply • 13/10/4 Addressing (Row/Column/Bank) • MRS cycle with address key programs • EPROM Serial Presence Detect • Gold (Au) contacts • Lead-free/RoHS compliant • PCB height: 1158 (mil) , single sided component
Order Information: VL 366S3353-GA S X
Pin Name
Function
A0-A12
Address inputs
B A 0, B A 1
Bank Select Address
DQ0-DQ63
Data Input/Output
C LK 0, C LK 2
Clock Input
C KE0
Clock Enable Input
CS0#,CS2#
Chip Select Input
RAS#
Row Address Strobe
C AS#
Column Address Input
WE#
Write Enable
DQM0-DQM7
Data input/output mask
VD D
Power Supply (3.3V)
VSS
Ground
*VREF
Power Supply for Reference
SD A
Serial Data Input/Output
SC L
SPD Clock Input
SA0~SA2
Address in EEPROM
NC
No Connect
* These pins are not used in this module.
DRAM DIE (Option) DRAM MANUFACTURER S -SAMSUNG MODULE SPEED GA: PC133 @ CL3 GH: PC100 @ CL2 GL: PC100 @ CL3 VL: Lead-free/RoHS
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Product Specifications PART NO:
VL366S3353-GAS/GHS/GLS
REV: 1.3
Pin Configuration Pin Number
Front Side
Pin Number
Front Side
Pin Number
Back Side
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Pin Number
Back Side
Product Specifications PART NO:
VL366S3353-GAS/GHS/GLS
REV: 1.3
Functional Block Diagram
CS0# DQM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7
DQM4 DQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7
CS#
DQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7
CS#
DQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7
CS#
DQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7
CS#
DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39
U0
DQM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15
DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47
U1
DQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7
CS#
U4
U5
DQM6 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55
U2
DQM3 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31
CS#
DQM5
CS2# DQM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23
DQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7
DQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7
CS#
DQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7
CS#
U6
DQM7 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63
U3
U7
Serial PD SDRAM U0 ~ U7
A0 ~ A12, BA0 & 1 RAS#
SCL
SDRAM U0 ~ U7
CAS#
SDRAM U0 ~ U7
WE#
SDRAM U0 ~ U7
CKE0
SDRAM U0 ~ U7
SDA A0
A1
A2
SA0 SA1 SA2
U0/U2 10 Ohm
U4/U6
CLK0/2
U1/U3
10 Ohm DQn
U5/U7
Every DQpin of SDRAM
3.3pF 10 Ohm CLK1/3
VDD Two 0.1uF Capacitors per each SDRAM
WP 47K
To all SDRAMs
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10pF
Product Specifications PART NO:
VL366S3353-GAS/GHS/GLS
REV: 1.3
Absolute Maximum Ratings Parameter
Symbol
Value
Unit
VIN, VOUT
-1.0 ~ 4.6
V
VDD, VDDQ
-1.0 ~ 4.6
V
TSTG
-55 ~ +150
Power dissi pation
PD
8
W
Short circuit current
IOS
50
mA
Voltage on any pin relative to Vss Voltage on VDD supply relative to Vss Storage temperature
0
C
Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating conditi on. Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
R ecommended D C Operating C onditions (TA = 00C to +700C) Parameter
Symbol
Min
Typ
Max
U nit
VDD,VDDQ
3.0
3.3
3.6
V
Input hi gh voltage
VIH
2.0
3.0
VDDQ+0.3
V
1
Input low voltage
VIL
-0.3
0
0.8
V
2
Output hi gh voltage
VOH
2.4
-
-
V
IOH = -2mA
Output low voltage
VOL
-
-
0.4
V
IOL = 2mA
Input leakage current (Inputs)
IIL
-18
-
18
uA
3
Input leakage current (I/O pins)
IIL
-3
-
3
uA
3,4
Supply voltage
N ote
Notes: 1. VIH (max) = 5.6V AC. The overshoot voltage durati on is <= 3ns. 2. VIL (mi n) = 2.0V AC . The undershoot voltage durati on is <= 3ns. 3. Any i nput 0V <= VIN <= VDDQ. 4.D OUT i s desabled, 0V <= VOUT <= VDDQ.
Capacitance (TA = 250C, f = 1MHz, VDD = 3.3V) Parameter
Symbol
Min
Max
Unit
Input capacitance (A0 ~ A12, BA0 ~ BA1)
C IN1
30
40
pF
Input capacitance (RAS#, CAS#, WE#)
CIN2
30
40
pF
Input capacitance (CKE0)
CIN3
30
40
pF
Input capacitance (CLK0, CLK2)
CIN4
25
30
pF
Input capacitance (CS0#, CS2#)
CIN5
16
25
pF
Input capacitance (DQM0 ~ DQM7)
CIN6
8
10
pF
Data input/output capacitance (DQ0 ~ DQ63)
COUT
6
8
pF
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Product Specifications PART NO:
DC Characteristics
VL366S3353-GAS/GHS/GLS
REV: 1.3
(Recommended operation condition unless otherwise noted, TA = 00C to +700C) Version
Parameter
Operating current (One bank active)
Symbol
ICC1
Precharge standby current in power-down mode
Active standby current in non power-down mode (One bank active)
Burst length = 1 tRC >= tRC(min) IOL = 0 mA
-GA
-GH
-GL
720
720
720
Unit
Note
mA
1
ICC2P
CKE <= VIL(max), tCC = 10ns
16
mA
ICC2PS
CKE & CLK <=VIL(max), tcc = 00
16
mA
ICC2N
CKE >= VIH (min), CS# >= VIH (min), tCC = 10ns Input signals are changed one time during 20ns
160
mA
ICC2NS
CKE >= VIH(min), CLK <= VIL(max), tcc = oo Input signals are stable
80
mA
ICC3P
CKE <= VIL(max), tcc = 10ns
48
mA
ICC3PS
CKE & CLK <= VIL(max), tcc = 00
48
mA
ICC3N
CKE >= VIH(min), CS# >= VIH(min), tcc = 10ns Input signals are changed one time during 20ns
240
mA
ICC3NS
CKE >= VIH(min), CLK <= VIL (max), tcc = 00 Input signals are stable
200
mA
Precharge standby current in non power-down mode
Active standby current in powerdown mode
Test Condion
Operating current (Burst mode)
ICC4
IOL = 0 mA Page burst 2 Banks actived tCCD = 2CLKs
880
800
800
mA
1
Refresh current
ICC5
tRC >= tRC(min)
1600
1520
1520
mA
2
Self refresh current
ICC6
CKE <= 0.2V
24
Note: 1. Measured with outputs open. 2.Refresh period is 64ms.
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mA
Product Specifications PART NO:
VL366S3353-GAS/GHS/GLS
AC Operating Test Conditions
REV: 1.3
(VDD = 3.3V, TA = 00C to +700C)
Parameter AC input levels (VIH/VIL) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition
Value
Unit
2.4/0.4
V
1.4
V
tr/tf = 1/1
ns
1.4
V
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Operating AC Parameter Version Parameter
Symbol -GA
-GH
-GL
U nit
N ote
Row acti ve to row acti ve delay
tRRD(mi n)
15
20
20
ns
1
RAS# to C AS# delay
tRCD(mi n)
20
20
20
ns
1
Row precharge ti me
tRP(mi n)
20
20
20
ns
1
tRAS(mi n)
45
50
50
ns
1
Row acti ve ti me tRAS(max) Row cycle ti me
tRC(mi n)
Last data i n to row precharge
tRDL(mi n)
Last data i n to Acti ve delay
100 65
70
us 70
ns
1
2
C LK
2
tDAL(mi n)
2 C LK + tRP
-
Last data i n to new col. addrees delay
tCDL(mi n)
1
C LK
1
Last data i n to burst stop
tBDL(mi n)
1
C LK
2
C ol. address to col. address delay
tCCD(mi n)
1
C LK
2
C AS Latency = 3
2
C LK
3
C AS Latency = 2
1
ea
4
Number of vali d output data
Notes: 1. The mi ni mum number of clock cycles i s determi ned by di vi di ng the mi ni mum ti me requi red wi th clock cycle ti me and then roundi ng off to the next hi gher i nteger. 2. Mi ni mum delay i s requi red to complete wri te. 3. All parts allow every cycle column address change. 4. In case of row precharge i nterrupt, auto precharge and read burst stop.
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Product Specifications PART NO:
VL366S3353-GAS/GHS/GLS
REV: 1.3
Operating AC Parameter -GA Parameter
-GH
-GL
Symbol Min
C AS latency = 2
-
C AS latency = 3
Max
1000
tCC
C LK to vali d output delay
Min
7.5
C AS latency = 3 C LK cycle ti me
Max
Min
C AS latency = 3 Output data hold ti me
10
1000
ns
1
ns
1,2
ns
2
-
5.4
-
6
-
6
-
3
-
3
-
3
-
tOH C AS latency = 2
N ote
10 1000
tSAC C AS latency = 2
U nit Max
C LK hi gh pulse wi dth
tCH
2.5
3
3
ns
3
C LK low pulse wi dth
tCL
2.5
3
3
ns
3
Input setup ti me
tSS
1.5
2
2
ns
3
Input hold ti me
tSH
0.8
1
1
ns
3
C LK to output i n Low-Z
tSLZ
1
1
1
ns
2
C AS latency = 3 C LK to output i n Hi -z
5.4
-
6
-
6
-
tSHZ C AS latency = 2
ns
Notes: 1. Parameters depend on programmed C AS latency. 2. If clock ri si ng ti me i s longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed i nput ri se and fall ti me (tr & tf) = 1ns. i f tr & tf i s longer than 1ns, transi ent ti mecompensati on should be consi dered, i .e. ,[(tr + tf)/2-1]ns should be added to the parameter.
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Product Specifications PART NO:
VL366S3353-GAS/GHS/GLS
REV: 1.3
Package Dimensions
Units : Inches (Millimeters) 5.250 (133.350) 5.014 (127.350)
0.118 (3.000)
R 0.079 (R 2.000)
B
A
.118DIA ± 0.004 (3.000DIA ± 0.100)
.450 (11.430)
C
0.250 (6.350)
0.250 (6.350)
0.350 (8.890)
0.100 Min (2.540 Min)
0.700 (17.780)
1.158 (29.413)
0.157 ± 0.004 (4.000 ± 0.100 )
1.450 (36.830)
2.150 (54.61) 4.550 (115.57)
(4.00 Min)
0.157 Min
0.100 Max (2.54 Max)
0.100 Min
0.250 (6.350 )
0.250 (6.350 )
0.123 ± .005 (3.125 ± .125) 0.079 ± .004 (2.000 ± .100)
Detail A
(2.540 Min)
0.050 ± 0.0039 (1.270 ± 0.10)
0.039 ± .002 (1.000 ± .050)
0.123 ± .005 (3.125 ± .125) 0.079 ± .004 (2.000 ± .100)
Detail B
0.010Max (0.250 Max) 0.050 (1.270 )
Detail C
Tolerances : ± .005(.13) unless otherwise specified
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688 Tel: 949-888-2444 Fax: 949-888-2445 PAGE 8 OF 9
Product Specifications PART NO:
VL366S3353-GAS/GHS/GLS
Revision History: Date
Rev.
P ag e
C h an g es
01/05/2006
1.1
All
Released spec
10/23/2006
1.2
9
Added History Revision
09/23/2010
1.3
All
Update datasheet
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688 Tel: 949-888-2444 Fax: 949-888-2445 PAGE 9 OF 9
REV: 1.3
