Datasheet For Vl383l5621e-b3s

Transcript

Product Specifications PART NO: VL383L5621E-B3S-I REV: 1.0 General Information 2GB 256MX72 DDR SDRAM REGISTERED ECC 184 PIN DIMM Description The VL383L5621E is a 256Mx72 Double Data Rate SDRAM high density registered DIMM. This memory module consists of thirty-six CMOS 128Mx4 bit with 4 banks DDR Synchronous DRAMs in BGA packages, two 13-26 bit Registered buffers in TSSOP package, a zero delay PLL clock in TSSOP package, and a 2K EEPROM in an 8-pin TSSOP package. This module is a 184-pin dual in-line memory module and is intended for mounting into a connector socket. Decoupling capacitors are mounted on the printed circuit board for each DDR SDRAM. Features . . . . . . . . . . . . . . . . . VDD: 2.5V +/- 0.2V , VDDQ: 2.5V +/- 0.2V VDDSPD = 2.3V to 3.6V 2.5V I/O (STTL_2 compatible) Supports ECC error detection and correction Two data transfers per clock cycle Birdirectional data strobe (DQS) Differential clock inputs (CK and CK#) DLL aligns DQ and DQS transition with CK transition Programmable Read latency: DDR333(3 clock) Programmable burst; length (2, 4, 8) Programmable burst (sequential & interleave) Auto & self refresh, 7.8us refresh interval (8K/64ms refresh) Serial presence detect (SPD) with EEPROM PCB: Height 1.200”, double sided components Gold edge contacts Leaded & lead-free/RoHS compliant Operating temperature (T A): -400C to +85 0C Order Information VL383L5621E-B3 S - I I: Screening temperature DRAM MANUFACTURER S - SAMSUNG Pin Name Function A0~A12 Address Inputs B A 0, B A 1 Bank Select Address DQ0~DQ63 Data Input/Output CB0~CB7 Check Bit (Data-in/Data-out) DQS0~DQS17 Data Strobe Input/Output C K 0, C K 0# Clock Input C K E 0, C K E 1 Clock Enable Input C S 0#, C S 1# Chip Select Input RAS# Row Address Strobe C AS# Column Addres Input WE# Write Enable VD D Power Supply VD D Q Power Supply for DQS VSS Ground VREF Power Supply for Reference VD D SPD SPD Power Supply (2.3V-3.6V) SD A Serial Data Input/Output SC L SPD Clock Input SA0~SA2 SPD Address RESET# Reset Enable NC No Connection MODULE SPEED B3: PC2700 @ CL2.5 VL : Lead-free/RoHS Virtium Technology, Inc. 30052Tomas, Rancho Santa Margarita, CA 92688 Tel: 949-888-2444 Fax: 949-888-2445 PAGE 1 OF 9 Product Specifications PART NO: VL383L5621E-B3S-I REV: 1.0 Pin Configuration 184-PIN DDR DIMM FRONT 184-PIN DDR DIMM BACK Pin Name Pin Name Pin Name Pin Name Pin Name Pin Name Pin Name Pin Name 1 VREF 24 DQ17 47 DQS8 70 VDD 93 VSS 116 VSS 13 9 VSS 162 DQ47 2 DQ0 25 DQS2 48 A0 71 NC 94 DQ4 117 DQ21 140 DQS17 163 NC 3 VSS 26 VSS 49 C B2 72 DQ48 95 DQ5 118 A11 141 A 10 164 VD DQ 4 DQ1 27 A9 50 VSS 73 DQ49 96 VD D Q 119 DQS11 142 C B6 165 DQ52 5 DQS0 28 DQ18 51 C B3 74 VSS 97 DQS9 120 VD D 143 VD D Q 166 DQ53 6 DQ2 29 A7 52 BA1 75 C K 2#* 98 DQ6 121 DQ22 144 CB7 167 A 13* 7 VD D 30 VD D Q 53 DQ32 76 C K 2* 99 DQ7 122 A8 145 VSS 168 VDD 8 DQ3 31 DQ19 54 VD D Q 77 VD D Q 100 VSS 123 DQ23 146 DQ36 169 DQS15 9 NC 32 A5 55 DQ33 78 DQS6 101 NC 124 VSS 147 DQ37 170 DQ54 10 RESET# 33 DQ24 56 DQS4 79 DQ50 102 NC 125 A6 148 VD D 171 DQ55 11 VSS 34 vss 57 DQ34 80 DQ51 103 NC 126 DQ28 149 DQS13 172 VD D Q 12 DQ8 35 DQ25 58 VSS 81 VSS 104 VD D Q 127 DQ29 150 DQ38 173 NC 13 DQ9 36 DQS3 59 BA0 82 NC 105 DQ12 128 VD D Q 151 DQ39 174 DQ60 14 DQS1 37 A4 60 DQ35 83 DQ56 106 DQ13 129 DQS12 152 VSS 175 DQ61 15 VD D Q 38 VDD 61 DQ40 84 DQ57 107 DQS10 130 A3 153 DQ44 176 VSS 16 C K 1* 39 DQ26 62 VD D Q 85 VDD 108 VD D 131 DQ30 154 RAS# 177 DQS16 17 C K 1#* 40 DQ27 63 WE# 86 DQS7 109 DQ14 132 VSS 155 DQ45 178 DQ62 18 VSS 41 A2 64 DQ41 87 DQ58 110 DQ15 133 DQ31 156 VD D Q 179 DQ63 19 DQ10 42 VSS 65 C AS# 88 DQ59 111 C KE1 134 CB4 157 C S 0# 180 VD D Q 20 DQ11 43 A1 66 VSS 89 VSS 112 VD D Q 135 CB5 158 C S 1# 181 SA0 21 C KE0 44 CB0 67 DQS5 90 NC 113 NC 136 VD D Q 159 DQS14 182 SA1 22 VD D Q 45 C B1 68 DQ42 91 SD A 114 DQ20 137 CK0 160 VSS 183 SA2 23 DQ16 46 VDD 69 DQ43 92 SC L 115 A 12 138 C K 0# 161 DQ46 184 VD D SPD Note: *: These pins are not used on this module. Virtium Technology, Inc. 30052Tomas, Rancho Santa Margarita, CA 92688 Tel: 949-888-2444 Fax: 949-888-2445 PAGE 2 OF 9 Product Specifications PART NO: VL383L5621E-B3S-I REV: 1.0 Functional Block Diagram VSS RCS1# RCS0# DQS0 DQS9 DQS I/O 3 I/O 2 I/O 1 I/O 0 S0# DQ0 DQ1 DQ2 DQ3 S0# DQ8 DQ9 DQ10 DQ11 DQS I/O 3 I/O 2 I/O 1 I/O 0 S0# DQ16 DQ17 DQ18 DQ19 DQS I/O 3 I/O 2 I/O 1 I/O 0 S0# DQ24 DQ25 DQ26 DQ27 DQS I/O 3 I/O 2 I/O 1 I/O 0 S0# DQ32 DQ33 DQ34 DQ35 DQS I/O 3 I/O 2 I/O 1 I/O 0 S0# DQ40 DQ41 DQ42 DQ43 DQS I/O 3 I/O 2 I/O 1 I/O 0 S0# DQ48 DQ49 DQ50 DQ51 DQS I/O 3 I/O 2 I/O 1 I/O 0 S0# DQ56 DQ57 DQ58 DQ59 DQS I/O 3 I/O 2 I/O 1 I/O 0 DQS I/O 3 I/O 2 I/O 1 I/O 0 S0# CB0 CB1 CB2 CB3 DM D0 DQS I/O 3 I/O 2 I/O 1 I/O 0 S1# DQS I/O 3 I/O 2 I/O 1 I/O 0 S1# DQS I/O 3 I/O 2 I/O 1 I/O 0 S1# DQS I/O 3 I/O 2 I/O 1 I/O 0 S1# DQS I/O 3 I/O 2 I/O 1 I/O 0 S1# DQS I/O 3 I/O 2 I/O 1 I/O 0 S1# DQS I/O 3 I/O 2 I/O 1 I/O 0 S1# DQS I/O 3 I/O 2 I/O 1 I/O 0 S1# DQS I/O 3 I/O 2 I/O 1 I/O 0 S1# DM DQ4 DQ5 DQ6 DQ7 D18 DQS1 D1 DM DQ12 DQ13 DQ14 DQ15 D19 D2 DM DQ20 DQ21 DQ22 DQ23 D20 S0# DQS I/O 0 I/O 1 I/O 2 I/O 3 S0# DQS I/O 0 I/O 1 I/O 2 I/O 3 S0# DQS I/O 0 I/O 1 I/O 2 I/O 3 S0# DQS I/O 0 I/O 1 I/O 2 I/O 3 S0# DQS I/O 0 I/O 1 I/O 2 I/O 3 S0# DQS I/O 0 I/O 1 I/O 2 I/O 3 S0# DQS I/O 0 I/O 1 I/O 2 I/O 3 S1# DM D27 DM D10 DQS I/O 0 I/O 1 I/O 2 I/O 3 D28 DQS I/O 0 I/O 1 I/O 2 I/O 3 D29 DQS I/O 0 I/O 1 I/O 2 I/O 3 D30 DQS I/O 0 I/O 1 I/O 2 I/O 3 D31 DQS I/O 0 I/O 1 I/O 2 I/O 3 D32 S1# DM DM D11 S1# DM DQS12 DM D3 DM DQ28 DQ29 DQ30 DQ31 D21 DM D12 S1# DM DQS13 DQS4 DM D4 DM DQ36 DQ37 DQ38 DQ39 D22 DM D13 S1# DM DQS14 DQS5 DM D5 DM DQ44 DQ45 DQ46 DQ47 D23 DQS6 DM D14 S1# DM DQS15 DM D6 DM DQ52 DQ53 DQ54 DQ55 D24 DQS7 DM D15 DQS I/O 0 I/O 1 I/O 2 I/O 3 D33 DQS I/O 0 I/O 1 I/O 2 I/O 3 D34 DQS I/O 3 I/O 2 I/O 1 I/O 0 D35 S1# DM DQS16 DM D7 DM DQ60 DQ61 DQ62 DQ63 D25 DQS8 DM D16 S1# DM DQS17 DM D8 DM CB4 CB5 CB6 CB7 D26 RCS0# : RCS1# : S0# DM D17 A0 A1 A2 SA0 SA1 SA2 S1# DM SPD V D D /V DDQ D0 - D35 VREF D0 - D35 V SS D0 - D35 SDA WP 1:2 R E G I S T E R DQS I/O 3 I/O 2 I/O 1 I/O 0 V DDSPD Serial PD SCL PCK DQS I/O 0 I/O 1 I/O 2 I/O 3 DM D9 DQS11 DM DQS3 WE# S0# DQS10 DM DQS2 CS0# CS1# BA0-BA1 A0-A12 RAS# CAS# CKE0 CKE1 DQS I/O 0 I/O 1 I/O 2 I/O 3 SDRAMs D0 - D17 SDRAMs D18 - D35 RBA0 - RBA1 RA0 - RA12 RRAS# RCAS# BA0-BA1: SDRAMs D0 - D35 A0-A12: SDRAMs D0 - D35 R A S #: SDRAMs D0 - D35 C A S #: SDRAMs D0 - D35 RCKE0 CKE : SDRAMs D0 - D17 RCKE1 CKE : SDRAMs D18 - D35 RWE# WE # : SDRAMs D0 - D35 CK0 CK0# PLL RESET# DDR SDRAM X 4 DDR SDRAM X 4 DDR SDRAM X 4 DDR SDRAM X 4 DDR SDRAM X 4 DDR SDRAM X 4 DDR SDRAM X 4 DDR SDRAM X 4 DDR SDRAM X 4 REGISTER X2 Notes: DQ, DQS, DM/DQS resistors: 22 Ohms. PCK# Virtium Technology, Inc. 30052Tomas, Rancho Santa Margarita, CA 92688 Tel: 949-888-2444 Fax: 949-888-2445 PAGE 3 OF 9 Product Specifications PART NO: VL383L5621E-B3S-I REV: 1.0 Absolute Maximum Ratings Parameter Symbol Value Unit Voltage on any pin relative to VSS VIN, VOUT -0.5 ~ 3.6 V Voltage on VDD & VDDQ supply relative to VSS VDD, VDDQ -0.1 ~ 3.6 V Storage temperature TSTG -55 ~ +150 0 C Operating temperature TA -40 ~ +85 0 C Power Dissipation PD 36 W Short circuit output current IOS 50 mA Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. Exposing to higher than recommended voltage for extended periods of time could affect device reliability. D C Operating C onditions TA = -400C to +850C Parameter Symbol Mi n Max Uni t VDD 2.3 2.7 V I/O Supply voltage D D R333 ( nomi nal VD D 2.5V) VDDQ 2.3 2.7 V I/O Reference voltage Supply voltage D D R333 ( nomi nal VD D 2.5V) Note VREF 0.49 * VD D Q 0.51 * VD D Q V 1 I/O Termi nati on voltage VTT VREF-0.04 VREF+0.04 V 2 Input logi c hi gh voltage VIH(D C ) VREF+0.15 VDDQ+0.30 V Input logi c low voltage VIL(D C ) -0.3 VREF-0.15 V Input voltage level, C K and C K# VIN(D C ) -0.3 VDDQ+0.30 V Input di fferenti al voltage, C K and C K# VID(D C ) 0.36 VDDQ+0.60 V Input crossi ng poi nt voltage, C K and C K# VIX(D C ) 0.3 VDDQ+0.60 V -5 5 uA Addr, C AS#,RAS#,WE# Input leakage current C S #, C K E -5 5 uA C K, C K# -10 10 uA DM -4 4 uA II Output leakage current IOZ -10 10 uA Output hi gh current(normal strength) VOUT = v + 0.84V IOH -16.8 - mA Output hi gh current(normal strength) VOUT = VTT - 0.84V IOL 16.8 - mA Output hi gh current(half strength) VOUT = VTT + 0.45V IOH -9 - mA Output hi gh current(half strength) VOUT = VTT - 0.45V IOL 9 - mA Notes: 3 1. VREF i s expected to be equal to 0.5*VD D Q of the transmi tti ng devi ce, and to track vari ati ons i n the D C level of the same. Peak to peak noi se on VREF may not exceed +/- 2% of the D C value. 2. VTT i s not appli ed di rectly to the devi ce. VTT i s a system supply for si gnal termi nati on resi stors, i s expected to be set equal to VREF, and must track vari ati ons i n the D C level of VREF. 3. VID i s the magni tude of the di fference between the i nput level on C K and the i nput level of C K#. Virtium Technology, Inc. 30052Tomas, Rancho Santa Margarita, CA 92688 Tel: 949-888-2444 Fax: 949-888-2445 PAGE 4 OF 9 Product Specifications PART NO: VL383L5621E-B3S-I REV: 1.0 AC Operating Conditions (TA = -400C to +850C) Parameter Symbol Min Input High (Logic1) Voltage VIH(AC) VREF+0.31 Input Low (Logic0) Voltage VIL(AC) Input Differential Voltage, CK and CK# Inputs VID(AC) Input Crossing Point Voltage, CK and CK# Inputs VIX(AC) Max Unit V VREF-0.31 V 0.7 VDDQ+0.6 V 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V Input/Output Capacitance TA=250C, f=100MHz Parameter Symbol Min Max Unit Input capacitance (A0~A12, BA0~BA1, RAS#, CAS#, WE#) CIN1 9 11 pF Input capacitance (CKE0, CKE1) CIN2 9 11 pF Input capacitance (CS0#, CS1#) CIN3 9 11 pF Input capacitance (CK0, CK0#) CIN4 11 12 pF Input/Output capacitance (DQ, DQS, DM, CB) CIO 11 13 pF Virtium Technology, Inc. 30052Tomas, Rancho Santa Margarita, CA 92688 Tel: 949-888-2444 Fax: 949-888-2445 PAGE 5 OF 9 Product Specifications PART NO: VL383L5621E-B3S-I REV: 1.0 IDD Specification (TA = -400C to +850C) Condition Symbol -B3 Unit IDD0* 2460 mA IDD1* 3000 mA PRECHARGE POWER-DOWN STANDBY CURRENT: All device banks are idle; Power-down mode; tCK=tCK(MIN); CKE=LOW IDD2P** 660 mA IDLE STANDBY CURRENT: CS#=HIGH; All device banks are idle; tCK=tCK(MIN); CKE=HIGH; Address and other control inputs changing once per clock cycle. VIN=VREF for DQ,DQS and DM IDD2F** 1560 mA ACITVE POWER-DOWN STANDBY CURRENT: One device bank active; Powerdown mode; tCK=tCK(MIN) ; CKE=LOW IDD3P** 1560 mA ACTIVE STANDBY CURRENT: CS#=HIGH; CKE=HIGH; One device bank active; tRC=tRAS(MAX); tCK=tCK(MIN); DQ,DM and DQS inputs change twice per clock cycle; Address and other control inputs changing once per clock cycle IDD3N** 2100 mA OPERATING CURRENT: Burst = 2; Reads; Continnuous burst; One device bank active; Address and other control inputs changing once per clock cycle; tCK=tCK(MIN); IOUT=0mA IDD4R* 3090 mA OPERATING CURRENT: Burst = 2; Writes; Continnuous burst; One device bank active; Address and other control inputs changing once per clock cycle; tCK=tCK(MIN); DQ,DM and DQS inputs change twice per clock cycle IDD4W* 3270 mA AUTO REFRESH CURRENT: TRC=TRFC(MIN) IDD5** 7860 mA SELF-REFRESH CURRENT: CKE< 0.2V IDD6** 180 mA OPERATING CURRENT: Four device bank interleaving Reads Burst=4 with auto precharge; tRC=tRC(MIN) ; tCK=tCK(MIN); Address and control inputs change only during Active READ, or WRITE commands IDD7* 7050 mA OPERATING CURRENT: One device bank active; Active-Precharge; tRC=tRC(MIN); tCK=tCK(MIN); DQ,DM and DQS inputs change once per clock cycle; Address and control inputs change once every two clock cycles OPERATING CURRENT: One device bank; Active-Read-Precharge; BL=4; tRC=tRC(MIN); tCK=tCK(MIN); IOUT=0mA; Address and control inputs change once per clock cycle Note: IDD specification is based on Samsung D-die components. *: Value calculated as one module rank in this operation condition, and other module rank in IDD2P (CKE LOW) mode. **: Value calculated as all module ranks in this operation condition. Virtium Technology, Inc. 30052Tomas, Rancho Santa Margarita, CA 92688 Tel: 949-888-2444 Fax: 949-888-2445 PAGE 6 OF 9 Product Specifications PART NO: VL383L5621E-B3S-I REV: 1.0 AC Timing Parameters & Specifications -B 3 Parameter Symbol MIN Row C ycle Ti me MAX U nit tRC 60 ns tRFC 72 ns Row acti ve tRAS 42 RAS# to C AS# delay tRC D 18 ns Refresh row cycle ti me Row precharge ti me Row acti ve to row acti ve delay Wri te recovery ti me Last data i n to READ command C L=2.5 tRP 18 ns 12 ns tWR 15 ns tWTR 1 tC K - - ns tC K 6 12 ns - - ns tC H 0.45 0.55 tC K C L=3 C lock hi gh level wi dth C lock low level wi dth D QS-out access ti me from C K/C K# ns tRRD C L=2 C lock cycle ti me 70K tC L 0.45 0.55 tC K tD QSC K -0.6 +0.6 ns ns Output data access ti me from C K/C K# tAC -0.7 +0.7 D ata strobe edge to output data edge tD QSQ - 0.4 ns Read preamble tRPRE 0.9 1.1 tC K Read postamble tRPST 0.4 0.6 tC K C K to vali d D QS-i n tD QSS 0.75 1.25 tC K D QS-i n setup ti me tWPRES 0 ns tWPRE 0.25 tC K tD SS 0.2 tC K tC K D QS-i n hold ti me D QS falli ng edge to C K ri si ng-setup ti me D QS falli ng edge to C K ri si ng-hold ti me tD SH 0.2 D QS-i n hi gh level wi dth tD QSH 0.35 tC K D QS-i n low level wi dth TD QSL 0.35 tC K Address and control i nput setup ti me (fast) tISF 0.75 ns Address and control i nput hold ti me (fast) tIHF 0.75 ns Address and control i nput setup ti me (slow) tISs 0.8 ns Address and control i nput hold ti me (slow) tIHs 0.8 D ata-out hi gh i mpedance ti me from C K/C K# tHZ -0.7 +0.7 ns D ata-out low i mpedance ti me from C K/C K# tLZ -0.7 +0.7 ns Mode regi gster set cycle ns tMRD 12 ns tD S 0.45 ns D Q & D M hold ti me to D QS tD H 0.45 ns C ontrol & address i nput pulse wi dth tIPW 2.2 ns D Q & D M i nput pulse wi dth tD IPW 1.75 ns Exi t self refresh to non-Read command tXSNR 75 ns Exi t self refresh to Read command tXSRD 200 tC K D Q & D M setup ti me to D QS Refresh i nterval ti me Output D QS vali d wi ndow C lock half peri od tREFI tQH tHP -tQHS tHP tC Lmi n or tC Hmi n D ata hold skew factor tQHS D QS wri te postamble tWPST 0.4 Acti ve Read wi th auto precharge command tRAP 18 Auto precharge Wri te recovery + Precharge ti me tD AL tWR/tC K + tRP/tC K 7.8 us - ns - ns 0.5 ns 0.6 tC K Virtium Technology, Inc. 30052Tomas, Rancho Santa Margarita, CA 92688 Tel: 949-888-2444 Fax: 949-888-2445 PAGE 7 OF 9 tC K Product Specifications PART NO: VL383L5621E-B3S-I REV: 1.0 Package Dimensions 0.150 (3.80) M AX 5.256 (133.50) 5.244 (133.20) 5.077 (128.95) TYP U1 U3 U2 U4 U19 0 .161(4.10) (4X) 0.154(3.90) U5 U6 U7 U8 U9 U10 1.206 (30.63) 1.194 (30.33) U11 U12 U14 U13 U15 U16 U17 U20 U18 0.700 (17.78) TYP. 0.098 (2.50) D (2X) 0.091 (2.30) TYP. 0.035 (0.90) R PIN 1 0.050 (1.27) 0.039 (1.00) TYP. TYP. 2.55 (64.77) 0.091 (2.30) TYP. 0.394 (10.00) TYP. 0.250 (6.35) TYP. 1.95 (49.53) PIN 92 4.750 (120.65) U21 U32 U23 U22 U33 U24 U34 U25 U35 U26 U36 U27 U28 U37 U30 U29 U38 U39 U31 U40 PIN 93 PIN 184 0.150 (3.80) TYP. NOTE: All dimensions in inches (millimet ers) Virtium Technology, Inc. 30052Tomas, Rancho Santa Margarita, CA 92688 Tel: 949-888-2444 Fax: 949-888-2445 PAGE 8 OF 9 0.054 (1.37) 0.046 (1.17) Product Specifications PART NO: VL383L5621E-B3S-I Revision History: Date Rev. P ag e 07/30/09 1.0 All C h an g es Spec release Virtium Technology, Inc. 30052Tomas, Rancho Santa Margarita, CA 92688 Tel: 949-888-2444 Fax: 949-888-2445 PAGE 9 OF 9 REV: 1.0