Transcript
Y24KPA PHASE CONTROL THYRISTOR Features
Center amplifying gate
Metal case with ceramic insulator
Low on-state and switching losses
Typical Applications
AC controllers
DC and AC motor control
Controlled rectifiers
IT(AV) VDRM/VRRM ITSM I2t
550A 200~600V 8.0 kA 320 103A2S
VALUE SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Tj(C)
UNIT Min
IT(AV)
Mean on-state current
180 half sine wave 50Hz Double side cooled
Type
TC=55C
660 125
A
TC=70C
550
VDRM VRRM
Repetitive peak off-state voltage Repetitive peak reverse voltage
VDRM&VRRM tp=10ms VDSM&VRSM= VDRM&VRRM+100V
125
IDRM IRRM
Repetitive peak current
VDM= VDRM VRM= VRRM
125
ITSM
Surge on-state current
10ms half sine wave VR=0.6VRRM
125
2
It VTO
2
I T for fusing coordination
Max
200
600
V
16
mA
8 320
Threshold voltage
kA 2
A s*103
0.75
V
0.36
m
125 rT
On-state slop resistance
VTM
Peak on-state voltage
ITM=1000A, F=5.0kN
125
1.41
V
dv/dt
Critical rate of rise of off-state voltage
VDM=0.67VDRM
125
1000
V/ s
di/dt
Critical rate of rise of on-state current
VDM= 67%VDRM to 800A, Gate pulse tr ≤0.5 s IGM=1.5A
125
100
A/ s
Qrr
Recovery charge
ITM=600A,tp=2000µs, di/dt=-20A/µs, VR =50V
125
IGT
Gate trigger current
VGT
Gate trigger voltage
IH VGD Rth(j-c) Rthc-h)
VA=12V, IA=1A
25
Holding current Non-trigger gate voltage
VDM=67%VDRM
125
Thermal resistance Junction to case Thermal resistance case to heat sink
At 1800 sine, double side cooled Clamping force 5.0kN
600
µC
30
200
mA
0.8
2.0
V
20
150
mA
0.3
V 0.080 C /W 0.020
Fm
Mounting force
3.3
5.5
kN
Tstg
Stored temperature
-40
140
C
Wt
Weight
Outline
http://www.tech-sem.com
60 KT19aT
Page 1 of 3
g
Y24KPA Y24KPA Peak On-state Voltage Vs.Peak On-state Current
Max . junction To case Thermai Impedance Vs.Time 0.08 0.09
Transient thermal impedance,°C/W
Instantaneous on-state voltage,volts
4.5 TJ =125°C 3.5
2.5
1.5
0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01
0.5 10
0 0.001
100 1000 10000 Instantaneous on-state current,amperes
0.01
0.1 Time,seconds
Fig.1
Max . caseTemperature Vs.Mean On-state Current Y24KPA 140
800 700 0
600
90
180
Conduction Angle
500
120
180
120 0
100
Case temperature,°C
Max.on-state dissipation ,watts
10
Fig.2
Max . Pow er Dissipation Y24KPAVs.Mean On-state Current
60
30 400 300 200
180
Conduction Angle
80 60 40 20
100
30
60
90
120
180
0
0 0
100
200
300
400
500
0
600
100 200 300 400 500 600 700 800 900 Mean on-state current,amperes
Mean on-state current,amperes
Fig.3
Fig.4
Max . Pow er Dissipation Vs.Mean On-state Current Y24KPA
Y24KP A over Max . case Temperature Vs.Mean On-state Current
600
140 360
270
500
DC
400
Conduction Angle
360
120
180
Case temperature,°C
Max.on-state dissipation ,watts
1
120 90
60 300 30 200
100
100
Conduction Angle
80 60 40 20
0 0
100 200 300 400 500 Mean on-state current,amperes
600
Fig.5
http://www.tech-sem.com
30
60 90
270
DC
0 0
200 400 600 800 1000 Mean on-state current,amperes
Fig.6
Page 2 of 3
120 180
1200
Y24KPA I2t Vs.Time 320---8
Surge Current Vs.Cycles 8 350
8
300
Maximum 2It(Kamps2,secs)
Total peak half-sine surge current,kA
9
7 6 5 4
250
200
150
100
3 2
50
1
10 Cycles at 50Hz
100
1
10
Time,m.seconds
Fig.7
Fig.8
Gate characteristic at 25°C junction temperature
Gate Trigger Zone at varies temperature 2V,200mA 3
18
-30°C -10°C
2.5
14 12
PGM=100W (100µs spulse)
max
Gate voltageVGT ,V
Gate voltageVGT ,V
16
10 8
min
6 P G 2W
4
25 °C
2 125°C
1.5 1 0.5
2 0
0 0
4
8 12 Gate currentIGT ,A
16
20
Fig.9
100
200 300 Gate currentIGT ,mA
Fig.10
13.7±0.6
Outline:
http://www.tech-sem.com
0
Page 3 of 3
400