Datasheet For Y24kpc By Techsem

Transcript

Y24KPC PHASE CONTROL THYRISTOR Features  Center amplifying gate  Metal case with ceramic insulator  Low on-state and switching losses Typical Applications  AC controllers  DC and AC motor control  Controlled rectifiers IT(AV) VDRM/VRRM ITSM I2t 450A 400~1000V 5.0 kA 125 103A2S VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT Min IT(AV) Mean on-state current 180 half sine wave 50Hz Double side cooled Type TC=55C 530 125 A TC=70C 450 VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage VDRM&VRRM tp=10ms VDSM&VRSM= VDRM&VRRM+100V 125 IDRM IRRM Repetitive peak current VDM= VDRM VRM= VRRM 125 ITSM Surge on-state current 10ms half sine wave VR=0.6VRRM 125 2 It VTO 2 I T for fusing coordination Max 400 1000 V 16 mA 5 kA 2 A s*103 125 Threshold voltage 0.75 V 0.7 m 125 rT On-state slop resistance VTM Peak on-state voltage ITM=770A, F=5.0kN 125 1.29 V dv/dt Critical rate of rise of off-state voltage VDM=0.67VDRM 125 1000 V/ s di/dt Critical rate of rise of on-state current VDM= 67%VDRM to 800A, Gate pulse tr ≤0.5 s IGM=1.5A 125 100 A/ s Qrr Recovery charge ITM=500A,tp=2000µs, di/dt=-20A/µs, VR =50V 125 IGT Gate trigger current VGT Gate trigger voltage IH VGD Rth(j-c) Rthc-h) VA=12V, IA=1A 25 Holding current Non-trigger gate voltage VDM=67%VDRM Thermal resistance Junction to case Thermal resistance case to heat sink 125 At 1800 sine, double side cooled Clamping force 5.0kN 800 µC 30 200 mA 0.8 2.0 V 20 150 mA 0.3 V 0.080 C /W 0.020 Fm Mounting force 3.3 5.5 kN Tstg Stored temperature -40 140 C Wt Weight Outline http://www.tech-sem.com 60 g KT19aT Page 1 of 3 2013-07 Y24KPC 0.08 Max . junction To case Thermai Impedance Vs.Time Y24KPC 1 On-state Current Peak On-state Voltage Vs.Peak 3.5 TJ =125°C 3 2.5 2 1.5 1 0.5 100 0.09 Transient thermal impedance,°C/W Instantaneous on-state voltage,volts 4 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0.001 1000 10000 Instantaneous on-state current,amperes 0.01 0.1 Time,seconds Fig.1 Y24KPC OVER Max . caseTemperature Vs.Mean On-state Current 140 1200 180 1000 0 800 120 120 180 60 Conduction Angle 0 90 30 600 400 200 180 100 case temperature,°C Max.on-state dissipation ,watts 10 Fig.2 Max . Pow er Dissipation On-state Current Y24KPC Vs.Mean 1 Conduction Angle 80 60 40 20 30 60 90 120 180 0 0 0 100 200 300 400 500 0 600 100 200 Fig.3 270 120 400 Case temperature,°C 180 90 600 700 140 DC 360 Conduction Angle 500 Max . case Temperature Vs.Mean On-state Current 24kpc over 700 500 400 Fig.4 Max . Pow er Dissipation Vs.Mean On-state Current Y24KPC 1 600 300 Mean on-state current,amperes Mean on-state current,amperes Max.on-state dissipation ,watts 1 120 60 300 30 200 360 100 100 Conduction Angle 80 60 40 20 0 30 60 90 120 180 270 DC 0 0 100 200 300 400 500 Mean on-state current,amperes 600 Fig.5 http://www.tech-sem.com 0 200 400 600 800 Mean on-state current,amperes 1000 Fig.6 Page 2 of 3 2013-07 Y24KPC I2t 125---5 Vs.Time Surge Current Vs.Cycles 5 140 5 Maximum 2It(Kamps2,secs) Total peak half-sine surge current,kA 5.5 4.5 4 3.5 3 2.5 2 120 100 80 60 40 1.5 20 1 1 10 Cycles at 50Hz 1 100 10 Time,m.seconds Fig.7 Fig.8 Gate characteristic at 25°C junction temperature Gate Trigger Zone at varies temperature 2V,200mA 3 18 -30°C -10°C 2.5 14 12 PGM=100W (100µs spulse) max Gate voltageVGT ,V Gate voltageVGT ,V 16 10 8 min 6 P G 2W 4 25 °C 2 125°C 1.5 1 0.5 2 0 0 0 4 8 12 Gate currentIGT ,A 16 20 Fig.9 0 100 200 300 Gate currentIGT ,mA 400 Fig.10 12.6±0.6 Outline: http://www.tech-sem.com Page 3 of 3 2013-07