Datasheet For Y38kpa By Techsem

Transcript

Y38KPA PHASE CONTROL THYRISTOR Features  Center amplifying gate  Metal case with ceramic insulator  Low on-state and switching losses Typical Applications  AC controllers  DC and AC motor control  Controlled rectifiers IT(AV) VDRM/VRRM ITSM I2t 1300A 200~600V 18 kA 1620 103A2S VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT Min IT(AV) Mean on-state current 180 half sine wave 50Hz Double side cooled TC=55C 1550 1300 VDRM&VRRM tp=10ms VDSM&VRSM= VDRM&VRRM+100V 125 IDRM IRRM Repetitive peak current VDM=VDRM VRM=VRRM 125 ITSM Surge on-state current 10ms half sine wave VR=0.6VRRM 125 It VTO I T for fusing coordination A TC=70C Repetitive peak off-state voltage Repetitive peak reverse voltage 2 Max 125 VDRM VRRM 2 Type 200 600 V 40 mA 18 1620 Threshold voltage kA 2 A s*103 0.76 V 0.14 m 125 rT On-state slop resistance VTM Peak on-state voltage ITM=1700A, F=15kN 125 1.43 V dv/dt Critical rate of rise of off-state voltage VDM=0.67VDRM 125 1000 V/ s di/dt Critical rate of rise of on-state current VDM= 67%VDRM to1300A, Gate pulse tr ≤0.5 s IGM=1.5A 125 100 A/ s Qrr Recovery charge ITM=1500A,tp=2000µs, di/dt=-20A/µs, VR =50V 125 IGT Gate trigger current VGT Gate trigger voltage IH VGD Rth(j-c) Rth(c-h) VA=12V, IA=1A 25 Holding current Non-trigger gate voltage VDM=0.67VDRM Thermal resistance Junction to case Thermal resistance case to heatsink 125 At 1800 sine, double side cooled Clamping force15kN 1000 µC 35 300 mA 0.8 2.5 V 20 250 mA 0.3 V 0.035 C /W 0.008 Fm Mounting force 10 20 kN Tstg Stored temperature -40 140 C Wt Weight Outline http://www.tech-sem.com 250 KT33cT Page 1 of 3 g Y38KPA 0.035 Max . junction To case Thermai Impedance Vs.Time Peak On-state VoltageY38KPA Vs.Peak On-state Current 0.04 Transient thermal impedance,°C/W Instantaneous on-state voltage,volts 4.5 TJ =125°C 3.5 2.5 1.5 0.5 100 0.035 0.03 0.025 0.02 0.015 0.01 0.005 0 0.001 1000 10000 100000 Instantaneous on-state current,amperes 0.01 Fig.1 Max . caseTemperature Y38KPA Vs.Mean On-state Current 140 1200 90 180 120 180 120 0 60 Conduction Angle 30 900 600 Conduction Angle 80 60 40 20 300 30 60 90 120 180 0 0 0 200 400 600 800 0 1000 1200 1400 400 Fig.3 1400 120 800 Case temperature,°C 180 90 120 60 600 30 400 360 100 200 Conduction Angle 80 60 40 20 0 0 200 400 600 800 1000 1200 1400 Mean on-state current,amperes Fig.5 http://www.tech-sem.com 2000 Y38KP A Vs.Mean over Max . case Temperature On-state Current 270 Conduction Angle 1600 140 DC 360 1000 1200 Fig.4 Max . Pow er Dissipation Y38KPA Vs.Mean On-state Current 1200 800 Mean on-state current,amperes Mean on-state current,amperes Max.on-state dissipation ,watts 180 100 Case temperature,°C Max.on-state dissipation ,watts 1800 0 10 Fig.2 Max . Pow er Dissipation Y38KPAVs.Mean On-state Current 1500 0.1 1 Time,seconds 30 60 90 270 DC 0 0 500 1000 1500 2000 2500 Mean on-state current,amperes Fig.6 Page 2 of 3 120 180 3000 Y38KPA I21620---18 t Vs.Time Surge Current 18 Vs.Cycles 1800 18 1600 Maximum 2It(Kamps2,secs) Total peak half-sine surge current,kA 20 16 14 12 10 8 6 1400 1200 1000 800 600 4 1 10 Cycles at 50Hz 400 100 1 Fig.7 Fig.8 Gate characteristic at 25°C junction temperature Gate Trigger Zone at varies temperature 2.5V,300MA 18 4 16 3.5 -30°C 12 PGM=100W (100µs spulse) max min 6 P G 2W 4 3 2.5 25 °C 10 8 V -10°C 14 Gate voltage,VGT Gate voltageVGT ,V 10 Time,m.seconds 2 125°C 2 1.5 1 0.5 0 0 4 8 12 Gate currentIGT ,A 16 20 Fig.9 0 100 200 300 Gate current,IGT Fig.10 25.9±0.5 Outline: http://www.tech-sem.com 0 Page 3 of 3 400 mA 500 600