Transcript
Y89KKJ FAST TURN-OFF THYRISTOR Features
Interdigitated amplifying gates
Fast turn-on and high di/dt
Low switching losses
Typical Applications
Inductive heating
Electronic welders
Self-commutated inverters
IT(AV) VDRM/VRRM tq ITSM I2t
3370A 3100~4000V 70~120µs 35 kA 6125 103A2S
VALUE SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Tj(C)
UNIT Min
IT(AV)
Mean on-state current
180 half sine wave 50Hz Double side cooled,
TC=55°C
3370 2290
VDRM&VRRM , tp=10ms VDSM&VRSM= VDRM&VRRM+100V
125
IDRM IRRM
Repetitive peak current
VD= VDRM VR= VRRM
125
ITSM
Surge on-state current
10ms half sine wave VR=0.6VRRM
125
It VTO rT
I T for fusing coordination
A
TC=85°C
Repetitive peak off-state voltage Repetitive peak reverse voltage
2
Max
125
VDRM VRRM
2
Type
3100
4000
V
250
mA
35 6125
Threshold voltage
125
On-state slop resistance
kA 2
A s*103
1.48
V
0.18
m
VTM
Peak on-state voltage
ITM=2200A, F=70kN
125
1.88
V
dv/dt
Critical rate of rise of off-state voltage
VDM=0.67VDRM
125
500
V/ s
di/dt
Critical rate of rise of on-state current
VDM= 67%VDRM ,to4000A Gate pulse tr ≤0.5 s IGM=1.5A
125
1200
A/ s
Qrr
Recovery charge
IITM=2000A,tp=2000µs, di/dt=-60A/µs,VR=50V
125
tq
Circuit commutated turn-off time
ITM=2000A,tp=1000µs, VR =50V dv/dt=30V/µs ,di/dt=-20A/µs
125
IGT
Gate trigger current
VGT
Gate trigger voltage
IH VGD Rth(j-c) Rth(c-h)
VA=12V, IA=1A
25
Holding current Non-trigger gate voltage
VDM=67%VDRM
Thermal resistance Junction to case Thermal resistance case to heat sink
125
At 1800 sine, double side cooled Clamping force 70kN
3500
µC
70
120
µs
40
450
mA
0.9
4.5
V
20
1000
mA
0.3
V 0.007 C /W 0.002
Fm
Mounting force
63
84
kN
Tstg
Stored temperature
-40
140
C
Wt
Weight
Outline
http://www.tech-sem.com
1390 KT84cT
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g
Y89KKJ Max . junction To Case Thermai Impedance Vs.Time 0.0070
Peak On-state Voltage Vs.Peak On-state Current Y89KKJ 0.008
4.5
Transient thermal impedance,°C/W
Instantaneous on-state voltage,volts
5 TJ =125°C
4 3.5 3 2.5 2 1.5 1 100
0.007 0.006 0.005 0.004 0.003 0.002 0.001 0 0.001
1000 10000 100000 Instantaneous on-state current,amperes
0.01
0.1 Time,seconds
Fig.1
35 I2t 6125 Vs.Time 7000
Total peak half-sine surge current,kA
Total peak half-sine surge current,kA
40 35 30 25 20 15 10 5
6000
5000
4000
3000
2000
1000
1
10 Cycles at 50Hz
100
1
10
Cycles at 50Hz
Fig.3
Fig.4 Gate Trigger Zone at varies temperature 4.5 V,450MA
Gate characteristic at 25°C junction temperature 7
18
-30°C
max.
P GM =140W (100μs spulse)
V
14
6
Gate voltage,VGT
16 V
10
Fig.2
35 Surge Current Vs.Cycles
Gate voltage,VGT
1
12 10 8
min.
6
-10°C
5
25 °C
4
125°C
3 2
P G 2W
4
1
2 0
0 0
4
8 12 16 Gate current,IGT A
20
24
100
200
300
400
500
Gate current,IGT
Fig.5
http://www.tech-sem.com
0
Fig.6
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mA
600
700
800
Y89KKJ Outline:
http://www.tech-sem.com
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