Datasheet Nds0610

Transcript

N April 1995 NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 180mA DC and can deliver pulsed currents up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch. -0.18 and -0.12A, -60V. RDS(ON) = 10Ω Voltage controlled p-channel small signal switch High density cell design for low RDS(ON) TO-92 and SOT-23 packages for both through hole and surface mount applications High saturation current ____________________________________________________________________________________________ S G D Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter NDF0610 NDS0610 Units VDSS Drain-Source Voltage -60 V VDGR Drain-Gate Voltage (RGS < 1 MΩ) -60 V VGSS Gate-Source Voltage - Continuous ±20 V ±30 V - Nonrepetitive (tP < 50 µs) ID Drain Current - Continuous -0.18 - Pulsed PD Maximum Power Dissipation TA = 25°C Derate above 25°C TJ,TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/16" from case for 10 seconds -0.12 A -1 0.8 0.36 W 5 2.9 mW/oC -55 to 150 °C 300 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient 200 350 °C/W NDS0610.SAM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min -60 Typ Max Units -1 µA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -10 µA IDSS Zero Gate Voltage Drain Current VDS = -48 V, VGS = 0 V V -200 µA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 10 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -10 nA V TJ = 125°C ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -1 mA TJ = 125°C RDS(ON) Static Drain-Source On-Resistance -1 -2.4 -3.5 -0.6 -2.1 -3.2 VGS = -10 V, ID = -0.5 A TJ = 125°C VGS = -4.5 V, ID = -0.25 A TJ = 125°C ID(on) On-State Drain Current -0.6 VGS = -10 V, VDS = -10 V VGS = -4.5 V, VDS = -10 V gFS Forward Transconductance 3.6 10 5.9 16 5.2 20 7.9 30 -1.6 Ω A -0.35 70 VDS = -10 V, ID = -0.1 A 170 mS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz 40 60 pF 11 25 pF 3.2 5 pF 7 10 nS 5 15 nS SWITCHING CHARACTERISTICS (Note 1) tD(on) Turn - On Delay Time VDD = -25 V, ID = -0.18 A, VGS = -10 V, RGEN = 25 Ω tr Turn - On Rise Time tD(off) Turn - Off Delay Time 13 15 nS tf Turn - Off Fall Time 10 20 nS Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = -48 V, ID = -0.5 A, VGS = -10 V 1.43 nC 0.6 nC 0.25 nC DRAIN-SOURCE DIODE CHARACTERISTICS IS Maximum Continuous Source Current ISM Maximum Pulse Source Current (Note 1) VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.5 A (Note 1) TJ = 125°C trr Reverse Recovery Time Irr Reverse Recovery Current VGS = 0 V, IS = -0.5 A, dIF/dt = 100 A/µs -0.18 A -1 A -1.2 -1.5 V -0.98 -1.3 40 ns 2.8 A Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDS0610.SAM Typical Electrical Characteristics -1.4 V GS = -4V -8 -1.2 R DS(on) , NORMALIZED -7 -1 -0.8 -6 -0.6 -5 -0.4 -4 -0.2 2 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 2.2 -9 VGS = -10V -5 1.8 -2 -4 -6 -8 V DS , DRAIN-SOURCE VOLTAGE (V) -9 -10 1.2 1 0 -10 Figure 1. On-Region Characteristics. -0.6 -0.8 -1 I D , DRAIN CURRENT (A) R DS(on) , NORMALIZED V GS = -10V 1.2 1 0.8 -25 -1.2 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 -4.5V -10V 2.5 25 -55 2 125 1.5 25 1 -55 0.5 150 0 Figure 3. On-Resistance Variation with Temperature. -0.2 -0.4 -0.6 -0.8 -1 I D , DRAIN CURRENT (A) 25 -1 125 Vth , NORMALIZED -0.8 -0.6 -0.4 -0.2 0 0 -2 -4 -6 V GS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. -8 -10 GATE-SOURCE THRESHOLD VOLTAGE 1.1 TJ = -55°C -1.2 -1.4 Figure 4. On-Resistance Variation with Drain Current and Temperature. -1.2 V DS = -10V -1.4 V GS TJ = 125°C -0.5A DRAIN-SOURCE ON-RESISTANCE D= 1.4 0.6 -50 -0.4 3 I 1.6 -0.2 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 1.8 R DS(ON) , NORMALIZED -8 0.8 0 DRAIN-SOURCE ON-RESISTANCE -7 1.4 0 I D, DRAIN CURRENT (A) -6 1.6 VDS = V GS I D = -1m A 1.05 1 0.95 0.9 0.85 0.8 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 Figure 6. Gate Threshold Variation with Temperature. NDS0610.SAM Typical Electrical Characteristics (continued) 1.5 I D = -10µA VGS = 0V -I , REVERSE DRAIN CURRENT (A) DRAIN-SOURCE BREAKDOWN VOLTAGE (V) 1.1 1.05 1 0.95 1 25 0.3 -55 0.2 0.9 -50 -25 0 TJ 25 50 75 100 , JUNCTION TEMPERATURE (°C) 125 0.1 0.6 150 Figure 7. Breakdown Voltage Variation with Temperature. 0.8 1 1.2 1.4 1.6 -VSD , BODY DIODE FORWARD VOLTAGE (V) 1.8 Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. -10 70 50 VGS , GATE-SOURCE VOLTAGE (V) C iss 30 CAPACITANCE (pF) TJ = 125°C 0.5 S BV DSS , NORMALIZED 1.15 20 C oss 10 5 f = 1 MHz C rss V GS = 0V 3 2 0.1 -8 V DS = -12V -24 -48 -6 -4 -2 I D = -0.5A 0 0.2 0.5 1 2 5 10 20 -V DS , DRAIN TO SOURCE VOLTAGE (V) 30 60 0 0.2 0.4 0.6 0.8 1 Q g , GATE CHARGE (nC) 1.2 1.4 1.6 Figure 10. Gate Charge Characteristics. Figure 9. Capacitance Characteristics. T J = -55°C 0.3 25 125 0.2 0.1 V DS = -10V g FS , TRANSCONDUCTANCE (SIEMENS) 0.4 0 0 -0.2 -0.4 -0.6 -0.8 -1 I D , DRAIN CURRENT (A) -1.2 -1.4 Figure 11. Transconductance Variation with Drain Current and Temperature NDS0610.SAM Typical Electrical Characteristics (continued) 3 2 3 2 -I D , DRAIN CURRENT (A) 0.5 R ( DS Lim ) ON it 1m 0u 1 s -I D , DRAIN CURRENT (A) 10 1 s 10 10 ms 0m s 1s 0.1 10 s DC 0.05 V GS = -10V SINGLE PULSE S RD (O Lim N) it 1m 10 ms 10 0m s 1s 0.1 0.05 0u s s 10 s DC V G S = -10V SINGLE PULSE T A = 25°C 0.01 10 0.5 T A = 25°C 0.01 0.005 0.005 1 2 5 10 20 30 60 1 80 2 - V DS , DRAIN-SOURCE VOLTAGE (V) 5 10 20 30 - V DS , DRAIN-SOURCE VOLTAGE (V) 60 80 Figure 13. NDS0610 (SOT-23) Maximum Safe Operating Area. Figure 12. NDF0610 (TO-92) Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.5 R θJA (t) = r(t) * R θJA o 0.2 0.2 R θJA = 200 C/W Datasheet) 0.1 0.1 P(pk) 0.05 t1 0.05 t2 0.02 TJ - T A = P * R θ JA (t) Duty Cycle, D = t 1 /t2 0.01 Single Pulse 0.02 0.01 0.0001 0.001 0.01 0.1 t 1, TIME (sec) 1 10 100 300 Figure 14. NDF0610 (TO-92) Transient Thermal Response Curve. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0.2 0.1 0.05 R θJA (t) = r(t) * R θJA 0.1 R o θJA = 350 C/W 0.05 0.02 P(pk) 0.01 t1 0.01 t2 Single Pulse TJ - T A = P * R θ JA (t) Duty Cycle, D = t1 /t2 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 300 Figure 15. NDS0610 (SOT-23) Transient Thermal Response Curve. NDS0610.SAM