Transcript
HMC313
v02.0703 MICROWAVE CORPORATION
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
AMPLIFIERS - SMT
8
Typical Applications
Features
Ideal as a Driver & Amplifier for:
P1dB Output Power: +14 dBm
• 2.2 - 2.7 GHz MMDS
Output IP3: +27 dBm
• 3.5 GHz Wireless Local Loop
Gain: 17 dB
• 5.0 - 6.0 GHz UNII & HiperLAN
Single Supply: +5V High Reliability GaAs HBT Process Ultra Small Package: SOT26
General Description
Functional Diagram
The HMC313 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifier that operates from a single Vcc supply. The surface mount SOT26 amplifier can be used as a broadband gain stage or used with external matching for optimized narrow band applications. With Vcc biased at +5V, the HMC313 offers 17 dB of gain and +15 dBm of saturated power while only requiring 50 mA of current. The “HMC313 Biasing and Impedance Matching Techniques” application note available within the “Application Notes” section offers recommendations for narrow band operation.
Electrical Specifications, TA = +25 °C Vcc = +5V Parameter
Units Min.
Frequency Range Gain
Max.
DC - 6 14
Gain Variation Over Temperature Input Return Loss
GHz
17
20
dB
0.02
0.03
dB/°C
7
dB
Output Return Loss
6
dB
Reverse Isolation
30
dB
14
dBm
15
dBm
27
dBm
Noise Figure
6.5
dB
Supply Current (Icc)
50
mA
Output Power for 1 dB Compression (P1dB) @ 1.0 GHz
11
Saturated Output Power (Psat) @ 1.0 GHz Output Third Order Intercept (IP3) @ 1.0 GHz
8 - 68
Typ.
24
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
HMC313
v02.0703
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz Gain & Return Loss
Gain vs. Temperature
8
25
25 20
S11 S21 S22
5
GAIN (dB)
RESPONSE (dB)
10
0
15
10
-5 -10
+ 25 C + 85 C - 40 C
5
-15 -20
0 0
1
2
3
4
5
6
0
7
1
2
FREQUENCY (GHz)
3
4
5
6
7
5
6
7
FREQUENCY (GHz)
Input & Output Return Loss
Reverse Isolation
0
0
AMPLIFIERS - SMT
20
15
ISOLATION (dB)
RETURN LOSS (dB)
-10 -5
-10
-15
S11 S22
-20
-30
-40
-20
-50 0
1
2
3
4
5
6
7
0
1
2
FREQUENCY (GHz)
P1dB vs. Temperature
4
Psat vs. Temperature
25
25 + 25 C + 85 C - 40 C
+ 25 C + 85 C - 40 C
20 Psat (dBm)
20 P1dB (dBm)
3
FREQUENCY (GHz)
15
10
5
15
10
5
0
0 0
1
2
3
4
FREQUENCY (GHz)
5
6
7
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
8 - 69
HMC313
v02.0703 MICROWAVE CORPORATION
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz Output IP3 vs. Temperature
Power Compression @ 1.0 GHz 20
40 35
+ 25 C + 85 C - 40 C
25 20 15 10 5 0 0
1
2
3
4
5
FREQUENCY (GHz)
6
7
15 10 5 0
-10 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 INPUT POWER (dBm)
-2
Power Compression @ 3.0 GHz 15 10 5 0 -5 -10 -22 -20 -18 -16 -14 -12 -10 -8 -6 INPUT POWER (dBm)
8 - 70
Pout (dBm) Gain (dB) PAE (%)
-5
20 Pout (dBm), Gain (dB), PAE (%)
IP3 (dBm)
30
AMPLIFIERS - SMT
Pout (dBm), Gain (dB), PAE (%)
8
Pout (dBm) Gain (dB) PAE (%)
-4
-2
0
2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
0
2
4
HMC313
v02.0703 MICROWAVE CORPORATION
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz Absolute Maximum Ratings +5.5 Vdc
RF Input Power (RFin)(Vcc = +5.0 Vdc)
+20 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C) (derate 3.99 mW/°C above 85 °C)
0.259 W
Thermal Resistance (junction to lead)
251 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
8 AMPLIFIERS - SMT
Collector Bias Voltage (Vcc)
Absolute Maximum Ratings
NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
8 - 71
HMC313
v02.0703 MICROWAVE CORPORATION
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
AMPLIFIERS - SMT
8
Pin Descriptions Pin Number
Function
Description
1
RFOUT
This pin is DC coupled. An off chip DC blocking capacitor is required.
3
RFIN
This pin is DC coupled. An off chip DC blocking capacitor is required.
2, 4-6
GND
These pins must be connected to RF/DC ground.
Interface Schematic
Application Circuit
Note: 1. Select Rbias to achieve desired Vcc voltage on Pin 1. 2. External Blocking Capacitors are required on Pins 1 & 3. 3. See “Application Notes” section for HMC313 Application Circuit.
8 - 72
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v02.0703
HMC313
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz Evaluation PCB
AMPLIFIERS - SMT
8
List of Material Item
Description
J1 - J2
PC Mount SMA Connector
U1
HMC313
PCB*
Evaluation PCB 1.5” x 1.5”
The circuit board used in the final applicatin should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request.
*Circuit Board Material: Roger 4350
The “HMC313 Biasing and Impedance Matching Techniques” application note is located in the “Application Notes” section of this Designers’ Guide. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
8 - 73
