Device Modeling Report Bee Technologies Inc. Components: Bipolar Junction Transistor Part Number: 2sd2012

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Device Modeling Report COMPONENTS: BIPOLAR JUNCTION TRANSISTOR PART NUMBER: 2SD2012 MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005 PSpice model parameter IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC NK RE RB RC CJE VJE MJE CJC VJC MJC FC TF XTF VTF ITF PTF TR EG XTB XTI Model description Saturation Current Ideal Maximum Forward Beta Forward Current Emission Coefficient Forward Early Voltage Forward Beta Roll-off Knee Current Non-ideal Base-Emitter Diode Saturation Current Non-ideal Base-Emitter Diode Emission Coefficient Ideal Maximum Reverse Beta Reverse Emission Coefficient Reverse Early Voltage Reverse Beta Roll-off Knee Current Non-ideal Base-Collector Diode Saturation Current Non-ideal Base-Collector Diode Emission Coefficient Forward Beta Roll-off Slope Exponent Emitter Resistance Base Resistance Series Collector Resistance Zero-bias Emitter-Base Junction Capacitance Emitter-Base Junction Potential Emitter-Base Junction Grading Coefficient Zero-bias Collector-Base Junction Capacitance Collector-base Junction Potential Collector-base Junction Grading Coefficient Coefficient for Onset of Forward-bias Depletion Capacitance Forward Transit Time Coefficient for TF Dependency on Vce Voltage for TF Dependency on Vce Current for TF Dependency on Ic Excess Phase at f=1/2pi*TF Reverse Transit Time Activation Energy Forward Beta Temperature Coefficient Temperature Coefficient for IS All Rights Reserved Copyright (c) Bee Technologies Inc. 2005 Reverse Reverse Early Voltage Characteristic Ic VAR Vce Y=aX+b (X1,Y1) (X2,Y2) All Rights Reserved Copyright (c) Bee Technologies Inc. 2005 Reverse DC Beta Characteristic (Ie vs. hFE) Measurement Simulation All Rights Reserved Copyright (c) Bee Technologies Inc. 2005 Forward Forward Early Voltage Characteristic Ic (X2,Y2) Y=aX+b VAF (X1,Y1) Vce All Rights Reserved Copyright (c) Bee Technologies Inc. 2005 C-B Capacitance Characteristic E-B Capacitance Characteristic All Rights Reserved Copyright (c) Bee Technologies Inc. 2005 BJT Ic-hFE Characteristics Circuit simulation result Evaluation circuit Q2 Q2 SD2 01 2 0A dc V1 5V dc I1 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005 Comparison Graph Circuit simulation result Simulation result Ic(A) 0.01 0.02 0.05 0.1 0.2 0.5 1 2 hFE Measurement 233 253 265 256 225 153 95 50 Simulation 232.203 253.496 265.427 255.682 224.195 152.503 93.910 49.808 %Error All Rights Reserved Copyright (c) Bee Technologies Inc. 2005 - 0.342 0.196 0.161 - 0.124 - 0.358 - 0.324 - 1.147 - 0.384 BJT Vce(sat) voltage & Vbe(sat) voltage Characteristics Circuit simulation result VBE VCE(SAT) Evaluation circuit Q2 Q2SD2012 0.2Adc 2Adc I2 I1 0 Simulation result Test condition: IC/IB = 10, IC=2A Vbe(sat)(V) Measurement Simulation Error(%) 1.02 1.0278 0.765 Vce(sat)(V) Measurement Simulation 0.443 0.443394 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005 Error(%) 0.089 Output Characteristics Circuit simulation result From top IB = 40mA 35mA 30mA 25mA 20mA 15mA 10mA 5mA Evaluation circuit Q2 Q2 SD2 01 2 0A dc V1 5V dc I1 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005 Output Characteristics Reference From top IB = 40mA 35mA 30mA 25mA 20mA 15mA 10mA 5mA All Rights Reserved Copyright (c) Bee Technologies Inc. 2005