Device Modeling Report Bee Technologies Inc. Components:bipolar Junction Transistor Part Number:2sc1740s

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Device Modeling Report COMPONENTS:BIPOLAR JUNCTION TRANSISTOR PART NUMBER:2SC1740S MANUFACTURER:ROHM Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004 Pspice model parameter IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC NK RE RB RC CJE VJE MJE CJC VJC MJC FC TF XTF VTF ITF PTF TR EG XTB XTI Model description Saturation Current Ideal Maximum Forward Beta Forward Current Emission Coefficient Forward Early Voltage Forward Beta Roll-off Knee Current Non-ideal Base-Emitter Diode Saturation Current Non-ideal Base-Emitter Diode Emission Coefficient Ideal Maximum Reverse Beta Reverse Emission Coefficient Reverse Early Voltage Reverse Beta Roll-off Knee Current Non-ideal Base-Collector Diode Saturation Current Non-ideal Base-Collector Diode Emission Coefficient Forward Beta Roll-off Slope Exponent Emitter Resistance Base Resistance Series Collector Resistance Zero-bias Emitter-Base Junction Capacitance Emitter-Base Junction Potential Emitter-Base Junction Grading Coefficient Zero-bias Collector-Base Junction Capacitance Collector-base Junction Potential Collector-base Junction Grading Coefficient Coefficient for Onset of Forward-bias Depletion Capacitance Forward Transit Time Coefficient for TF Dependency on Vce Voltage for TF Dependency on Vce Current for TF Dependency on Ic Excess Phase at f=1/2pi*TF Reverse Transit Time Activation Energy Forward Beta Temperature Coefficient Temperature Coefficient for IS All Rights Reserved Copyright (C) Bee Technologies Inc. 2004 Reverse Reverse Early Voltage Characteristic Ic VAR Vce Y=aX+b (X1,Y1) (X2,Y2) All Rights Reserved Copyright (C) Bee Technologies Inc. 2004 Reverse DC Beta Characteristic (Ie vs. hFE) Measurement Simulation All Rights Reserved Copyright (C) Bee Technologies Inc. 2004 Forward Forward Early Voltage Characteristic Ic Y=aX+b VAF (X2,Y2) (X1,Y1) Vce All Rights Reserved Copyright (C) Bee Technologies Inc. 2004 C-B Capacitance Characteristic Measurement Simulation E-B Capacitance Characteristic Measurement Simulation All Rights Reserved Copyright (C) Bee Technologies Inc. 2004 BJT Ic-hFE characteristics Circuit simulation result Evaluation circuit Q1 Q2SC1740S 6Vdc I1 V1 1mAdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004 Comparison Graph Circuit simulation result Simulation result Ic(A) 0.001 0.002 0.005 0.01 0.02 0.05 0.1 hFE Measurement 166.93 167.49 167.22 166.39 164.39 159.24 148.81 Simulation 166.92 167.51 167.527 166.741 164.764 158.661 148.774 %Error 0.005990535 0.011941011 0.18359048 0.210950177 0.227507756 0.36360211 0.024191923 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004 BJT Vce(sat) voltage Characteristics Circuit simulation result Evaluation circuit I2 50mAdc Q1 Q2SC1740S I1 5mAdc 0 Simulation result Test condition: IC/IB = 10, IC=50mA Vce(sat)(V) Measurement Simulation 0.4[Max] 0.091 Error(%) - All Rights Reserved Copyright (C) Bee Technologies Inc. 2004 Output Characteristics Circuit simulation result IB=150uA IB=100uA IB=50uA IB=0 Evaluation circuit Q1 Q2SC1740S 10Vdc I1 V1 0Adc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004