Preview only show first 10 pages with watermark. For full document please download

Dg4599 Low-voltage Single-supply, Spdt Analog Switch In Sc-70 Vishay Siliconix Description

   EMBED


Share

Transcript

DG4599 Vishay Siliconix Low-Voltage Single-Supply, SPDT Analog Switch in SC-70 DESCRIPTION FEATURES The DG4599 is a cost effective upgrade to other types of 4599 low-voltage, single-pole/double-throw analog switches available in the industry today. • • • • Combining low power, high speed, low on-resistant and small physical size, the DG4599 is ideal for portable and battery powered applications. The DG4599 is built on Vishay Siliconix’s low voltage CMOS process. An epitaxial layer prevents latchup. Break-before make is guaranteed for DG4599. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. 6-Pin SC-70 Package 60 Ω Max. (26 Typ.) On-Resistance 2 Ω Typ. RON Flatness Fast Switching: tON = 30 ns (Max.) tOFF = 25 ns (Max.) • 2.25 V to 5.5 V Single Supply Operation • Break-Before-Make Switching • TTL/CMOS-Logic Compatible Pb-free Available RoHS* COMPLIANT BENEFITS • • • • Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space APPLICATIONS • • • • • • Battery-Operated Equipment Audio and Video Signal Routing Cellular Phones Low-Voltage Data-Acquistion Systems Sample-and-Hold Circuits Communications Systems FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION TRUTH TABLE SC-70 IN 1 6 NO (Source1) V+ 2 5 COM GND 3 4 NC (Source2) Logic NC NO 0 ON OFF 1 OFF ON Logic "0" ≤ 0.8 V Logic "1" ≥ 2.4 V Top View Device Marking: 4J ORDERING INFORMATION Temp Range Package - 40 to 85 °C SC70-6 Part Number DG4599DL-T1 DG4599DL-T1-E3 * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 72218 S-70852-Rev. C, 30-Apr-07 www.vishay.com 1 DG4599 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Limit Referenced V+ to GND Unit - 0.3 to + 6 IN, COM, NC, NOa V - 0.3 to (V+ + 0.3) Continuous Current (Any Terminal) ± 50 Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 200 Storage Temperature (D Suffix) Power Dissipation (Packages)b mA - 65 to 125 °C 250 mW 6-Pin SO70c Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/°C above 25 °C. SPECIFICATIONS (V+ = 5 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 5 V, ± 10 %, VIN = 0.8 or 2.4 Ve Limits - 40 to 85 °C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch VNO, VNC VCOM Analog Signal Ranged Drain-Source On-Resistance rDS(on) Flatnessd rDS(on) V+ = 4.5 V, VD = 3 V, IS = 10 mA Room Full 7 10 rDS(on) Flatness V+ = 2.5 V Room 2 IS(off) Switch Off Leakage Current ID(off) Channel-On Leakage Current ID(on) V+ = 5.5 V VS = 1 V/4.5 V, VD = 4.5 V/1 V V+ = 5.5 V, VS = VD = 1 V/4.5 V 60 65 Room Full - 1.0 - 4.0 1.0 4.0 Room Full - 1.0 - 4.0 1.0 4.0 Room Full - 1.0 - 3.0 1.0 4.5 2.4 Ω nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Cin Input Capacitance IINL or IINH Input Current 0.8 Full VIN = 0 or V+ Full 3 -1 V pF 1 µA Dynamic Characteristics Turn-On Timed tON Turn-Off Timed tOFF Break-Before-Make Timed td Charge Injectiond QINJ Off-Isolationd OIRR d XTALK Crosstalk Source-Off Capacitanced Channel-On CD(on) d 9 30 40 Room Full 5 25 30 ns 10 pC Room CL = 1 nF, VS = 0 V VGEN = 0 V, RGEN = 0 Ω, Figure 3 RL = 50 Ω, CL = 5 pF, f = 1 MHz CS(off) Capacitanced Drain-to-Source Capacitance VD or VS = 3 V, RL = 300 Ω, CL = 35 pF Figures 1 and 2 Room Full VIN = 0 or V+, f = 1 MHz CDS(off) 1 4 Room 5 Room - 73 Room - 70 Room 7 Room 20 Room 20 dB pF Power Supply Power Supply Range V+ Power Supply Current I+ Power Consumption PC www.vishay.com 2 4.5 VIN = 0 or V+ 0.01 5.5 V 1.0 µA 5.5 µW Document Number: 72218 S-70852-Rev. C, 30-Apr-07 DG4599 Vishay Siliconix SPECIFICATIONS (V+ = 3 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 3 V, ± 10 %, VIN = 0.4 or 2.0 Ve Limits - 40 to 85 °C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged Drain-Source On-Resistanced rDS(on) Flatnessd VNO, VNC VCOM rDS(on) V+ = 2.7 V, VD = 1.5 V, IS = 10 mA Room Full 15 19 rDS(on) Flatness VS = 0 to V+, IS = 10 mA Room 7.5 95 105 Ω Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Current IINL or IINH VIN = 0 or V+ Full 2 0.8 -1 1 V µA Dynamic Characteristics Turn-On Timed tON Turn-Off Timed tOFF Break-Before-Make Timed Charge Injectiond VD or VS = 2.0 V, RL = 300 Ω, CL = 35 pF Figures 1 and 2 td QINJ Room Full 12 45 55 Room Full 6 35 40 ns 5 10 pC 3.3 V 0.01 1.0 µA 3.3 µW Room CL = 1 nF, VGEN = 0 V, VS = 0 V RGEN = 0 Ω, Figure 3 1 Room 7 Power Supply Power Supply Range V+ Power Supply Current I+ Power Consumption PC Document Number: 72218 S-70852-Rev. C, 30-Apr-07 2.7 VIN = 0 or V+ www.vishay.com 3 DG4599 Vishay Siliconix SPECIFICATIONS (V+ = 2.5 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 2.5 V, ± 10 %, VIN = 0.4 or 2.0 Ve Limits - 40 to 85 °C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged Drain-Source On-Resistance rDS(on) Flatnessd VNO, VNC VCOM rDS(on) V+ = 2.25 V, VD = 1.0 V, IS = 10 mA Room Fulld 26 29 rDS(on) Flatness V+ = 2.5 V Room 10 110 120 Ω Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Current IINL or IINH VIN = 0 or V+ Full 2 0.4 -1 1 V µA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time VD or VS = 1.5 V, RL = 300 Ω, CL = 35 pF Figures 1 and 2 td Room Fulld 16 50 60 Room Fulld 7 35 45 Room 1 ns 12 Power Supply Power Supply Range V+ Power Supply Currentd I+ Power Consumption PC 2.25 VIN = 0 or V+ 0.01 2.75 V 1.0 µA 2.75 µW Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Guaranteed by 5 V leakage testing, not production tested. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 72218 S-70852-Rev. C, 30-Apr-07 DG4599 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 rDS(on) - Drain-Source On-Resistance (Ω) rDS(on) - Drain-Source On-Resistance (Ω) 30 25 V+ = 2.5 V 20 15 V+ = 3 V 10 V+ = 5 V 5 V+ = 2.5 V 25 20 85 °C 15 25 °C - 40 °C V+ = 5 V 5 - 40 °C 25 °C 0 0 0 1 2 3 4 5 0 1 2 VD - Analog Voltage (V) 3 4 5 VD - Analog Voltage (V) rDS(on) vs. Analog Voltage and Temperature rDS(on) vs. Analog and Power Voltage 100 10 mA V+ = 5 V VIN = 0 V 1 mA I+ - Supply Current (nA) I+ - Supply Current (nA) 85 °C 10 10 1 0.1 100 µA 10 µA 1 µA 100 pA 10 pA 0.01 - 60 - 40 - 20 1 pA 0 20 40 60 80 100 120 140 1 10 Temperature (°C) 10 K 100 K 1M 10 M 100 100 K V+ = 5 V V+ = 5 V VD, V S = 5 V 0 ID(off) Leakage Current (pA) Leakage Current (pA) 1K Supply Current vs. Input Switching Frequency Supply Current vs. Temperature 10 K 100 Input SwitchingFrequency (Hz) 1K ID(on) 100 10 - 100 ID(off) IS(off) - 200 ID(on) - 300 - 400 - 500 1 - 50 - 25 - 600 0 25 50 75 100 125 150 0 1 2 3 4 5 Temperature (°C) VD, V S - Analog Voltage (V) Leakage Current vs. Temperature Leakage vs. Analog Voltage Document Number: 72218 S-70852-Rev. C, 30-Apr-07 6 www.vishay.com 5 DG4599 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 100 Off Isolation 25 °C 20 80 85 °C 15 OIRR, XTALK (dB) tON, tOFF - Switching Time (nS) tON - 40 °C tOFF 25 °C 10 85 °C 5 60 40 20 - 40 °C 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Crosstalk V+ = 3 V RL = 50 Ω 0 10 K 5.5 100 K V+ - Supply Voltage (V) 10 M 100 M Frequency (Hz) Switching Time vs. Temperature and Supply Voltage Crosstalk and Off Isolation vs. Frequency 3.0 0 2.5 -1 Insertion Loss (dB) VT - Threshold Voltage (V) 1M 2.0 1.5 1.0 0.5 V+ = 3 V RL = 50 Ω -2 -3 -4 -5 0.0 -6 0 1 2 3 4 5 6 7 100 K 10 K 1K 1M 10 M 100 M 1G Frequency (Hz) V+ - Supply Voltage (V) Input Switching Threshold vs. Supply Voltage Insertion Loss vs. Frequency 6 CL = 1 nF 4 Charge Injection (pC) V+ = 2.5 V 2 V+ = 3 V 0 -2 V+ = 5 V -4 -6 0 1 2 3 4 5 6 VD - Analog Voltage (V) Charge Injection vs. Analog Voltage www.vishay.com 6 Document Number: 72218 S-70852-Rev. C, 30-Apr-07 DG4599 Vishay Siliconix TEST CIRCUITS V+ +3V Logic Input V+ 0V Switch Output COM NO or NC Switch Input tr < 20 ns tf < 20 ns 50 % VOUT 0.9 x V OUT Switch Output IN Logic Input RL 300 Ω GND CL 35 pF 0V tOFF tON Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT = VCOM RL R L + R ON Figure 1. Switching Time V+ Logic Input V+ VNO VNC 0V COM NO tr < 5 ns tf < 5 ns 3V VO NC RL 300 Ω IN CL 35 pF VNC = VNO VO GND Switch Output 90 % 0V tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V+ Rgen ΔVOUT V+ NC or NO COM VOUT VOUT + IN Vgen CL = 1 nF 3V IN On Off On GND Q = ΔVOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection Document Number: 72218 S-70852-Rev. C, 30-Apr-07 www.vishay.com 7 DG4599 Vishay Siliconix TEST CIRCUITS V+ 10 nF V+ COM 0 V, 2.4 V IN COM NC or NO Off Isolation = 20 log RL GND V NC/ NO V COM Analyzer Figure 4. Off-Isolation V+ 10 nF V+ COM Meter IN 0 V, 2.4 V NC or NO GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz Figure 5. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72218. www.vishay.com 8 Document Number: 72218 S-70852-Rev. C, 30-Apr-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1