Transcript
DG9411 Vishay Siliconix
Low-Voltage Single SPDT Analog Switch
DESCRIPTION
FEATURES
The DG9411 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (tON: 9 ns, tOFF: 5 ns), low on-resistance (rDS(on): 7 Ω) and small physical size (SC70), the DG9411 is ideal for portable and battery powered applications requiring high performance and efficient use of board space.
• • • • • • •
The DG9411 is built on Vishay Siliconix’s low voltage JI2 process. An epitaxial layer prevents latchup. Break-before make is guaranteed for DG9411.
BENEFITS
Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off.
• • • •
Low voltage operation (2.25 V to 5.5 V) Low on-resistance - rDS(on): 7 Ω Fast switching - tON: 9 ns, tOFF: 5 ns Low charge injection - QINJ: 5 pC Low power consumption TTL/CMOS compatible 6-Pin SC70 package
Pb-free Available
RoHS* COMPLIANT
Reduced power consumption Simple logic interface High accuracy Reduce board space
APPLICATIONS • • • • •
Cellular phones Communication systems Portable test equipment Battery operated systems Sample and hold circuits
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE SC-70 IN
1
6
NO (Source1)
V+
2
5
COM
GND
3
4
NC (Source2)
Logic
NC
NO
0
ON
OFF
1
OFF
ON
Logic "0" ≤ 0.8 V Logic "1" ≥ 2.4 V
Top View
ORDERING INFORMATION Device Marking 4Dx or 4Dxy
Temp Range
Package
- 40 to 85 °C
SC70-6
Part Number DG9411DL-T1 DG9411DL-T1-E3
* Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71347 S-72609-Rev. D, 24-Dec-07
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DG9411 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Reference V+ to GND
Limit - 0.3 to + 6
IN, COM, NC, NOa Continuous Current (Any Terminal)
V
- 0.3 to (V+ + 0.3) ± 50
Peak Current (Pulsed at 1 ms, 10 % duty cycle) b
mA
± 200
Storage Temperature Power Dissipation (Packages)
Unit
6-Pin SC70
c
- 65 to 150
°C
250
mW
Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 3.1 mW/°C above 70 °C.
SPECIFICATIONS V+ = 2.5 V
Parameter
Symbol
Test Conditions Unless Otherwise Specified V+ = 2.5 V, ± 10 % VIN = 0.4 or 2.0 Ve
Limits - 40 to 85 °C Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch VNO, VNC VCOM
Analog Signal Ranged Drain-Source On-Resistance rDS(on) Flatnessd
rDS(on)
V+ = 2.25 V, VD = 1.0 V, IS = 10 mA
Room Fulld
26 29
rDS(on) Flatness
V+ = 2.5 V
Room
10
IS(off)
Switch Off Leakage Currentf
V+ = 2.75 V, VS = 0.5 V/1.5 V, VD = 1.5 V/0.5 V ID(off)
Channel-On Leakage Currentf
ID(on)
V+ = 2.75 V, VS = VD = 0.5 V/1.5 V
35 40
Ω
Room Fulld
- 250 - 3.0
250 3.0
pA nA
Room Fulld
- 250 - 3.0
250 3.0
pA nA
Room Fulld
- 250 - 3.0
250 3.0
pA nA
2
Digital Control Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitanced
Cin IINL or IINH
Input Current
0.4
Full VIN = 0 or V+
Full
3 -1
V pF
1
µA
Dynamic Characteristics Turn-On Time
tON
Turn-Off Time
tOFF
Charge Injectiond
QINJ
Off-Isolationd
OIRR
Crosstalkd
XTALK
Source-Off Capacitanced
CL = 1 nF, VGEN = 0 V, VS = 0 V, RGEN = 0 Ω, Figure 3 RL = 50 Ω, CL = 5 pF, f = 1 MHz
CS(off)
Capacitanced
CD(on) d
Drain-to-Source Capacitance
16
40 45
Room Full
7
23 28
ns
10
pC
Roomd
td
Break-Before-Make Time
Channel-On
VD or VS = 1.5 V, RL = 300 Ω, CL = 35 pF Figures 1 and 2
Room Fulld
VIN = 0 or V+, f = 1 MHz
CDS(off)
1
12
Room
5
Room
- 73
Room
- 70
Room
7
Room
20
Room
20
dB
pF
Power Supply Power Supply Range
V+ d
Power Supply Current
I+
Power Consumption
PC
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2.25 VIN = 0 or V+
2.75 0.01
V
1.0
µA
0.3
µW
Document Number: 71347 S-72609-Rev. D, 24-Dec-07
DG9411 Vishay Siliconix SPECIFICATIONS V+ = 3 V
Parameter
Symbol
Test Conditions Unless Otherwise Specified V+ = 3 V, ± 10 % VIN = 0.4 or 2.0 Ve
Limits - 40 to 85 °C Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch Analog Signal Ranged
VNO, VNC VCOM
Drain-Source On-Resistanced
rDS(on)
V+ = 2.7 V, VD = 1.5 V, IS = 10 mA
Room Full
15 19
rDS(on) Flatnessd
rDS(on) Flatness
VS = 0 to V+, IS = 10 mA
Room
7.5
Switch Off Leakage Currentf Channel-On Leakage Currentf
IS(off) V+ = 3.3 V, VS = 1 V/3 V, VD = 3 V/1 V ID(off) ID(on)
V+ = 3.3 V, VS = VD = 1 V/3 V
25 30
Ω
Room Full
- 500 - 4.0
500 4.0
pA nA
Room Full
- 500 - 4.0
500 4.0
pA nA
Room Full
- 500 - 4.0
500 4.0
pA nA
2
Digital Control Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitanced
Cin
Input Current
IINL or IINH
0.8
Full VIN = 0 or V+
Full
3 -1
V pF
1
µA
Dynamic Characteristics Turn-On Timed
tON
Turn-Off Timed
tOFF
Break-Before-Make Timed
VD or VS = 2.0 V, RL = 300 Ω, CL = 35 pF Figures1 and 2
td
Room Full
12
15 20
Room Full
6
8 10
ns
10
pC
Room CL = 1 nF, VGEN = 0 V, VS = 0 V, RGEN = 0 Ω, Figure 3
1
7
Charge Injectiond
QINJ
Off-Isolationd
OIRR
Crosstalkd
XTALK
Source-Off Capacitanced
CS(off)
Room
7
Channel-On Capacitanced
CD(on)
Room
20
Drain-to-Source Capacitanced
CDS(off)
Room
20
RL = 50 Ω, CL = 5 pF, f = 1 MHz
VIN = 0 or V+, f = 1 MHz
Room
5
Room
- 73
Room
- 70
dB
pF
Power Supply Power Supply Range
V+
Power Supply Current
I+
Power Consumption
PC
Document Number: 71347 S-72609-Rev. D, 24-Dec-07
2.7 VIN = 0 or V+
0.01
3.3
V
1.0
µA
0.4
µW
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DG9411 Vishay Siliconix SPECIFICATIONS V+ = 5 V
Parameter
Symbol
Test Conditions Unless Otherwise Specified V+ = 5 V, ± 10 % VIN = 0.8 or 2.4 Ve
Limits - 40 to 85 °C Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch VNO, VNC VCOM
Analog Signal Ranged Drain-Source On-Resistance rDS(on) Flatnessd
rDS(on)
V+ = 4.5 V, VD = 3 V, IS = 10 mA
Room Full
7 10
rDS(on) Flatness
V+ = 2.5 V
Room
2
IS(off)
Switch Off Leakage Current
V+ = 5.5 V, VS = 1 V/4.5 V, VD = 4.5 V/1 V ID(off)
Channel-On Leakage Current
ID(on)
V+ = 5.5 V, VS = VD = 1 V/4.5 V
12 16
Room Full
- 1.0 - 4.0
1.0 4.0
Room Full
- 1.0 - 4.0
1.0 4.0
Room Full
- 1.0 - 3.0
1.0 4.5
2.4
Ω
nA
Digital Control Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitance
Cin IINL or IINH
Input Current
0.8
Full VIN = 0 or V+
Full
3 -1
V pF
1
µA
Dynamic Characteristics Turn-On Timed
tON
Turn-Off Timed
tOFF
Break-Before-Make Timed
td
Charge Injectiond
QINJ
Off-Isolationd
OIRR
d
XTALK
Crosstalk
Source-Off Capacitanced Channel-On Capacitance Drain-to-Source Capacitanced
VD or VS = 3 V, RL = 300 Ω, CL = 35 pF Figure 1 and 2
CD(on)
9
11 15
Room Full
5
7 9
ns
10
pC
Room CL = 1 nF, VS = 0 V, VGEN = 0 V, RGEN = 0 Ω, Figure 3 RL = 50 Ω, CL = 5 pF, f = 1 MHz
CS(off) d
Room Full
VIN = 0 or V+, f = 1 MHz
CDS(off)
1
4
Room
5
Room
- 73
Room
- 70
Room
7
Room
20
Room
20
dB
pF
Power Supply Power Supply Range
V+
Power Supply Current
I+
Power Consumption
PC
4.5 VIN = 0 or V+
0.01
5.5
V
1.0
µA
0.6
µW
Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Guaranteed by 5 V leakage testing, not production tested. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 71347 S-72609-Rev. D, 24-Dec-07
DG9411 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 rDS(on) - Drain-Source On-Resistance (Ω)
30
25 V+ = 2.5 V 20
15
V+ = 3 V
10 rDS(on) -
V+ = 5 V 5
V+ = 2.5 V 25
20 85 °C
15
85 °C
10
5
40 °C 25 °C
0
0 0
1
2
3
4
0
5
1
2
3
4
5
VD - Analog Voltage (V)
VD - Analog Voltage (V)
rDS(on) vs. Analog Voltage and Temperature
rDS(on) vs. Analog and Power Voltage 100
10 mA V+ = 5 V VIN = 0 V
1 mA
10
I+ - Supply Current (nA)
I+ - Supply Current (nA)
25 °C 40 °C
V+ = 5 V
1
0.1
100 µA 10 µA 1 µA 100 pA 10 pA 1 pA
0.01 - 60 - 40 - 20
0
20
40
60
80
1
100 120 140
10
100
1K
10 K
100 K
1M
10 M
Input Switching Frequency (Hz)
Temperature (°C)
Supply Current vs. Input Switching Frequency
Supply Current vs. Temperature 100
100 K
V+ = 5 V V+ = 5 V VD, V S = 5 V
ID(off)
1K
Leakage Current (pA)
Leakage Current (pA)
10 K
0
ID(on)
100
- 100 ID(off)
IS(off)
- 200 ID(on) - 300 - 400
10 - 500 1
- 600 - 50
- 25
0
25
50
75
100
125
Temperature (°C)
Leakage Current vs. Temperature
Document Number: 71347 S-72609-Rev. D, 24-Dec-07
150
0
1
2
3
4
5
6
VD, V S - Analog Voltage (V)
Leakage vs. Analog Voltage
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DG9411 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25
100 Off Isolation
25 °C
20
80
85 °C
15
OIRR, XTALK (dB)
tON, tOFF - Switching Time (nS)
tON
40 °C
tOFF 25 °C
10
85 °C 5
2.5
3.0
3.5
4.0
4.5
5.0
Crosstalk
40
20
- 40 °C
0 2.0
60
V+ = 3 V RL = 50 Ω
0 10 K
5.5
100 K
1M
V+ - Supply Voltage (V)
Switching Time vs. Temperature and Supply Voltage
100 M
Crosstalk and Off Isolation vs. Frequency
3.0
0
2.5
V+ = 3 V RL = 50 Ω
-1
2.0
Insertion Loss (dB)
VT - Threshold Voltage (V)
10 M
Frequency (Hz)
1.5
1.0
0.5
-2
-3
-4
-5
0.0
-6 0
1
2
3
4
5
6
7
1K
100 K
10 K
1M
10 M
100 M
1G
Frequency (Hz)
V+ - Supply Voltage (V)
Insertion Loss vs. Frequency
Input Switching Threshold vs. Supply Voltage 6 CL = 1 nF 4 Charge Injection (pC)
V+ = 2.5 V 2 V+ = 3 V 0
-2
V+ = 5 V
-4
-6 0
1
2
3
4
5
6
VD - Analog Voltage (V)
Charge Injection vs. Analog Voltage
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Document Number: 71347 S-72609-Rev. D, 24-Dec-07
DG9411 Vishay Siliconix TEST CIRCUITS
V+
+3V
Logic Input V+
0V Switch Output
COM
NO or NC
Switch Input
tr < 20 ns tf < 20 ns
50 %
VOUT 0.9 x V OUT Switch Output
IN Logic Input
RL 300 Ω
GND
CL 35 pF
0V tOFF
tON
Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense.
CL (includes fixture and stray capacitance) VOUT = VCOM
RL R L + R ON
Figure 1. Switching Time
V+ Logic Input
V+ VNO VNC
0V
COM
NO
tr < 5 ns tf < 5 ns
3V
VO
NC RL 300 Ω
IN
CL 35 pF
VNC = V NO VO
GND
Switch Output
90 %
0V tD
tD
CL (includes fixture and stray capacitance)
Figure 2. Break-Before-Make Interval
V+
Rgen
ΔVOUT
V+ NC or NO
COM
VOUT VOUT
+ IN
Vgen
CL = 1 nF
3V
IN On
Off
On
GND Q = ΔVOUT x CL IN depends on switch configuration: input polarity determined by sense of switch.
Figure 3. Charge Injection
Document Number: 71347 S-72609-Rev. D, 24-Dec-07
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DG9411 Vishay Siliconix TEST CIRCUITS
V+ 10 nF
V+ COM 0 V, 2.4 V
IN COM
NC or NO V NC/NO Off Isolation = 20 log
RL
GND
VCOM
Analyzer
Figure 4. Off-Isolation
V+ 10 nF
V+ COM Meter IN 0 V, 2.4 V NC or NO GND
HP4192A Impedance Analyzer or Equivalent f = 1 MHz
Figure 5. Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71347.
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Document Number: 71347 S-72609-Rev. D, 24-Dec-07
Package Information Vishay Siliconix
SCĆ70:
6ĆLEADS
MILLIMETERS 6
5
Dim A A1 A2 b c D E E1 e e1 L
4 E1 E
1
2
3 -B-
e
b e1 D
-Ac A2 A L A1
Document Number: 71154 06-Jul-01
INCHES
Min
Nom
Max
Min
Nom
Max
0.90
–
1.10
0.035
–
0.043
–
–
0.10
–
–
0.004
0.80
–
1.00
0.031
–
0.039
0.15
–
0.30
0.006
–
0.012
0.10
–
0.25
0.004
–
0.010
1.80
2.00
2.20
0.071
0.079
0.087
1.80
2.10
2.40
0.071
0.083
0.094
1.15
1.25
1.35
0.045
0.049
0.053
0.65BSC
0.026BSC
1.20
1.30
1.40
0.047
0.051
0.055
0.10
0.20
0.30
0.004
0.008
0.012
7_Nom
7_Nom
ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550
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Legal Disclaimer Notice www.vishay.com
Vishay
Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
