Transcript
DRD (xxxx) W COMPLEX ARRAY FOR RELAY DRIVERS Please click here to visit our online spice models database.
Features • • • •
A
Epitaxial Planar Die Construction One Transistor and One Switching Diode in One Package Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2)
SOT-363
B C
Mechanical Data • • • • • • • •
Case: SOT-363 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 8 Ordering Information: See Page 8 Weight: 0.008 grams (approximate)
H K
J
M
D
F
L
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
⎯
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
α
0°
8°
All Dimensions in mm P/N DRDNB16W DRDPB16W DRDNB26W DRDPB26W
R1 (NOM) R2 (NOM) 1K 10K 1K 10K 220 4.7K 220 4.7K DRDN010W/ DRDN005W
Maximum Ratings, Total Device
R2
R2 R1
DRDP006W
DRDNB16W/ DRDNB26W
R1
DRDPB16W/ DRDPB26W
@TA = 25°C unless otherwise specified
Characteristic Power Dissipation (Note 3)
Symbol PD
Value 200
Unit mW
Thermal Resistance, Junction to Ambient Air (Note 3)
RθJA TJ, TSTG
625
°C/W
-55 to +150
°C
Operating and Storage Temperature Range
Maximum Ratings, DRDN010W NPN Transistor Characteristic
Symbol VCBO VCEO VEBO IC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Note 3)
Maximum Ratings, DRDN005W NPN Transistor Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current – Continuous (Note 3) Notes:
@TA = 25°C unless otherwise specified Value 45 18 5 1000
Unit V V V mA
@TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC
Value 80 80 4.0 500
Unit V V V mA
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on page 9 or our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30573 Rev. 10 - 2
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Maximum Ratings, DRDP006W PNP Transistor Characteristic
@TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Note 3)
Maximum Ratings, DRDNB16W Pre-Biased NPN Transistor Characteristic
Maximum Ratings, DRDNB26W Pre-Biased NPN Transistor Characteristic
Maximum Ratings, DRDPB16W Pre-Biased PNP Transistor Characteristic
Maximum Ratings, DRDPB26W Pre-Biased PNP Transistor Characteristic
Maximum Ratings, Switching Diode
Unit V V mA
@TA = 25°C unless otherwise specified Value -50 +5 to -10 600
Unit V V mA
@TA = 25°C unless otherwise specified Value -50 +5 to -5 -600
Unit V V mA
Value 100
Unit V
75
V
53 500 250 4.0 2.0
V mA mA
@TA = 25°C unless otherwise specified
Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
DS30573 Rev. 10 - 2
Value 50 -5 to +5 600
Symbol VCC VIN IC
Supply Voltage Input Voltage Output Current
Unit V V mA
@TA = 25°C unless otherwise specified
Symbol VCC VIN IC
Supply Voltage Input Voltage Output Current
Non-Repetitive Peak Forward Surge Current
Value 50 -5 to +10 600
Symbol VCC VIN IC
Supply Voltage Input Voltage Output Current
Unit V V V mA
@TA = 25°C unless otherwise specified
Symbol VCC VIN IC
Supply Voltage Input Voltage Output Current
RMS Reverse Voltage Forward Continuous Current Average Rectified Output Current
Value -60 -60 -5.0 -600
(Note 3) (Note 3) @ t = 1.0μs @ t = 1.0s
Symbol VRM VRRM VRWM VR VR(RMS) IFM IO IFSM
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A
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Electrical Characteristics, DRDN010W NPN Transistor Characteristic DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Current Gain-Bandwidth Product Capacitance
Symbol hFE VCE(SAT) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO fT Cobo
Min 150
@TA = 25°C unless otherwise specified Max 800 0.5
⎯ 45 18 5
⎯ ⎯ ⎯ 1 1
⎯ ⎯ 100
Test Condition IC = 100mA, VCE = 1V IC = 300mA, IB = 30mA IC = 100μA, IE = 0 IC = 1mA, IB = 0 IE = 100μA, IC = 0 VCB = 40V, IE = 0 VEB = 4V, IC = 0 VCE = 10V, IC = 50mA, f = 100MHz VCB = 10V, IE = 0, f = 1MHz
μA μA MHz pF
⎯ 8
⎯
Electrical Characteristics, DRDN005W NPN Transistor Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
Unit ⎯ V V V V
@TA = 25°C unless otherwise specified
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
Min 80 80 4.0
Max ⎯ ⎯ ⎯
Unit V V V
Collector Cutoff Current
ICBO
⎯
100
nA
Collector Cutoff Current
ICES
⎯
100
nA
DC Current Gain
hFE
100
⎯
⎯
VCE(SAT) VBE(SAT)
⎯ ⎯
0.25 1.2
V V
fT
100
⎯
MHz
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product
Electrical Characteristics, DRDP006W PNP Transistor Characteristic DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Current Gain-Bandwidth Product Capacitance
Symbol hFE VCE(SAT) V(BR)CBO V(BR)CEO V(BR)EBO ICBO fT Cobo
Min 100 ⎯ -60 -60 -5
@TA = 25°C unless otherwise specified Max 300 -0.4
Unit ⎯ V V V V nA MHz pF
⎯ ⎯ ⎯ -10
⎯ 200
⎯ 8
⎯
Test Condition IC = -150mA, VCE = -10V IC = -150mA, IB = -15mA IC = -10μA, IE = 0 IC = -10mA, IB = 0 IE = -10μA, IC = 0 VCB = -50V, IE = 0 VCE = -20V, IC = -50mA, f = 100MHz VCB = -10V, IE = 0, f = 1MHz
Electrical Characteristics, DRDNB16W Pre-Biased NPN Transistor Characteristic Input Voltage Output Voltage Input Current Output Current DC Current Gain Gain-Bandwidth Product
DS30573 Rev. 10 - 2
Symbol Vl(off) Vl(on) VO(on) Il IO(off) Gl fT
Min 0.3 ⎯ ⎯ ⎯ ⎯ 56 ⎯
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Test Condition IC = 100μA, IE = 0 IC = 1.0mA, IB = 0 IE = 100μA, IC = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 60V, IBO = 0V VCE = 80V, IBO = 0V IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 100mA, IB = 10mA IC = 100mA, VCE = 1.0V VCE = 2.0V, IC = 10mA, f = 100MHz
Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 200
Max ⎯ 2.0 0.3V 7.2 0.5 ⎯ ⎯
@TA = 25°C unless otherwise specified
Unit V V V mA
Test Condition VCC = 5V, IO = 100μA VO = 0.3V, IO = 20mA IO/Il = 50mA/2.5mA VI = 5V μA VCC = 50V, VI = 0V ⎯ VO = 5V, IO = 50mA MHz VCE = 10V, IE = 5mA, f = 100MHz
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Electrical Characteristics, DRDNB26W Pre-Biased NPN Transistor Characteristic Input Voltage Output Voltage Input Current Output Current DC Current Gain Gain-Bandwidth Product
Symbol Vl(off) Vl(on) VO(on) Il IO(off) Gl fT
Min 0.5
Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 200
⎯ ⎯ ⎯ ⎯ 47 ⎯
Max ⎯ 3.0 0.3V 28 0.5 ⎯ ⎯
Unit V V V mA
Test Condition VCC = 5V, IO = 100μA VO = 0.3V, IO = 20mA IO/Il = 50mA/2.5mA VI = 5V μA VCC = 50V, VI = 0V ⎯ VO = 5V, IO = 50mA MHz VCE = 10V, IE = 5mA, f = 100MHz
Electrical Characteristics, DRDPB16W Pre-Biased PNP Transistor Characteristic Input Voltage Output Voltage Input Current Output Current DC Current Gain Gain-Bandwidth Product
Symbol Vl(off) Vl(on) VO(on) Il IO(off) Gl fT
Min -0.3
Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 200
⎯ ⎯ ⎯ ⎯ 56 ⎯
Max ⎯ -2.0 -0.3V -7.2 -0.5 ⎯ ⎯
@TA = 25°C unless otherwise specified
Unit V V V mA
Test Condition VCC = -5V, IO = -100μA VO = -0.3V, IO = -20mA IO/Il = -50mA/-2.5mA VI = -5V μA VCC = -50V, VI = 0V ⎯ VO = -5V, IO = -50mA MHz VCE = -10V, IE = -5mA, f = 100MHz
Electrical Characteristics, DRDPB26W Pre-Biased PNP Transistor Characteristic Input Voltage Output Voltage Input Current Output Current DC Current Gain Gain-Bandwidth Product
Symbol Vl(off) Vl(on) VO(on) Il IO(off) Gl fT
Electrical Characteristics, Switching Diode Characteristic Reverse Breakdown Voltage (Note 4)
Min -0.5
Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 200
⎯ ⎯ ⎯ ⎯ 47 ⎯
Max ⎯ -3.0 -0.3V -28 -0.5 ⎯ ⎯
@TA = 25°C unless otherwise specified
@TA = 25°C unless otherwise specified
Unit V V V mA
Test Condition VCC = -5V, IO = -100μA VO = -0.3V, IO = -20mA IO/Il = -50mA/-2.5mA VI = -5V μA VCC = -50V, VI = 0V ⎯ VO = -5V, IO = -50mA MHz VCE = -10V, IE = -5mA, f = 100MHz
@TA = 25°C unless otherwise specified Symbol V(BR)R
Min 75
Max ⎯
Unit ⎯
Forward Voltage
VF
0.62 ⎯ ⎯ ⎯
0.72 0.855 1.0 1.25
V
Reverse Current (Note 4)
IR
⎯
2.5 50 30 25
μA μA μA nA
Total Capacitance
CT
⎯
4.0
pF
Reverse Recovery Time
trr
⎯
4.0
ns
Notes:
Test Condition IR = 10μA IF = 5.0mA IF = 10mA IF = 100mA IF = 150mA VR = 75V VR = 75V, TJ = 150°C VR = 25V, TJ = 150°C VR = 20V VR = 0, f = 1.0MHz IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω
4. Short duration pulse test used to minimize self-heating effect.
DS30573 Rev. 10 - 2
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Device Characteristics 1,000
200
RθJA = 625°C/W
hFE, DC CURRENT GAIN
PD, POWER DISSIPATION (mW)
250
150
100
100
50 VCE = 1.0V
1 0.0001
0 0
80 120 160 40 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Derating Curve (Total Device)
100
0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 2, Typical DC Current Gain vs. Collector Current (DRDN010W)
10
1,000
VCE (SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (mV)
COBO, OUTPUT CAPACITANCE (pF)
f = 1MHz
10
1 0.1
0.0001
100
1
0.1
0.01 50
75
100
TA, AMBIENT TEMPERATURE (ºC) Fig. 5, Typical Collector-Cutoff Current vs. Ambient Temperature (DRDN005W) DS30573 Rev. 10 - 2
0.001
0.01
0.1
10
1
IC, COLLECTOR CURRENT (A) Fig. 4, Typical Collector Saturation Voltage vs. Collector Current (DRDN010W)
VCE, COLLECTOR EMITTER VOLTAGE (V)
ICBO, COLLECTOR-BASE CURRENT (nA)
10
1
1 10 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 3, Typical Output Capacitance vs. Collector-Base Voltage (DRDN010W)
10
25
100
125
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2.0 1.8 IC = 30mA
1.6 1.4 IC = 10mA
1.2 1.0
IC = 1mA
0.8 0.6 0.4
IC = 100mA
0.2 0 0.001
1 0.1 10 100 IB, BASE CURRENT (mA) Fig. 6, Typical Collector Saturation Region (DRDN005W) 0.01
DRD (xxxx) W © Diodes Incorporated
0.500
10,000
0.450 0.400
T A = 150°C
1,000
hFE, DC CURRENT GAIN
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
VCE = 5V
IC IB = 10
0.350 0.300 TA = 25°C
0.250 TA = 150°C
0.200 0.150 0.100
100
T A = 25°C
TA = -50°C
10
0.050 TA = -50°C
0 1
1
1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7, Typical Collector-Emitter Saturation Voltage vs. Collector Current (DRDN005W)
1
VCE = 5V
0.9
fT, GAIN BANDWIDTH PRODUCT (MHz)
VBE(ON), BASE-EMITTER ON VOLTAGE (V)
1,000
1,000
1.0
0.8 TA = -50°C
0.7 TA = 25°C
0.6 0.5 0.4
T A = 150°C
0.3 0.2 0.1 0.1
1 10 IC, COLLECTOR CURRENT (mA) Fig. 9, Typical Base-Emitter On Voltage vs. Collector Current (DRDN005W)
100
10
1
100
10
1 IC, COLLECTOR CURRENT (mA) Fig. 10, Typical Gain Bandwidth Product vs. Collector Current (DRDN005W)
0.6
1.6 VCE, COLLECTOR-EMITTER VOLTAGE (V)
IC = 10 IB
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
10 100 IC, COLLECTOR CURRENT (mA) Fig. 8, Typical DC Current Gain vs. Collector Current (DRDN005W)
0.5 0.4
0.3 TA = 150°C
TA = 25°C
0.2
0.1
TA = -50°C
0 1
10
100
1,000
IC, COLLECTOR CURRENT (mA) Fig.11, Typical Collector-Emitter Saturation Voltage vs. Collector Current (DRDP006W)
DS30573 Rev. 10 - 2
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1.4
IC = 300mA
IC = 10mA
IC = 100mA
1.2
IC = 1mA
IC = 30mA
1.0 0.8 0.6 0.4 0.2 0 0.001
0.01
0.1 1 10 100 IB, BASE CURRENT (mA) Fig. 12, Typical Collector Saturation Region (DRDP006W)
DRD (xxxx) W © Diodes Incorporated
1.0
1,000 VBE(ON), BASE-EMITTER ON VOLTAGE (V)
VCE = 5V
hFE, DC CURRENT GAIN
TA = 150°C
100 T A = 25°C TA = -50°C
10
VCE = 5V
0.9
0.7 0.6 0.5 0.4 0.3
1 1
10 100 IC, COLLECTOR CURRENT (mA) Fig. 13, Typical DC Current Gain vs. Collector Current (DRDP006W)
0.2
1,000
0.1
10 1 IC, COLLECTOR CURRENT (mA) Fig. 14, Typical Base-Emitter On Voltage vs. Collector Current (DRDP006W)
100
30 VCE = 5V
20 C, CAPACITANCE (pF)
fT, GAIN BANDWIDTH PRODUCT (MHz)
1,000
100
10
1
10 100 IC, COLLECTOR CURRENT (mA) Fig. 15, Typical Gain Bandwidth Product vs. Collector Current (DRDP006W)
1,000
Cibo
10
5.0
-1.0 -10 -30 VR, REVERSE VOLTAGE (V) Fig. 16, Typical Capacitance (DRDP006W)
IR, INSTANTANEOUS REVERSE CURRENT (nA)
10,000
100
10 TA = -40ºC
1
0.1
TA = 125ºC
1,000
0.4 0.8 1.2 1.6 0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 17, Typical Forward Characteristics (Switching Diode)
DS30573 Rev. 10 - 2
f = 1MHz
1.0 -0.1
1
IF, INSTANTANEOUS FORWARD CURRENT (mA)
T A = -50°C
0.8
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100
10
1
0.1 60 80 100 20 40 VR, REVERSE VOLTAGE (V) Fig. 18, Typical Reverse Characteristics (Switching Diode) 0
DRD (xxxx) W © Diodes Incorporated
CT, TOTAL CAPACITANCE (pF)
3
2.5
f = 1MHz
2
1.5
1
0.5
0 0
10
30
20
40
V R, REVERSE VOLTAGE (V) Fig. 19, Typical Capacitance vs. Reverse Voltage (Switching Diode)
Ordering Information
Notes:
5.
(Note 5)
Device
Packaging
Shipping
DRDN010W-7
SOT-363
3000/Tape & Reel
DRDP006W-7
SOT-363
3000/Tape & Reel
DRDNB16W-7
SOT-363
3000/Tape & Reel
DRDNB26W-7
SOT-363
3000/Tape & Reel
DRDPB16W-7
SOT-363
3000/Tape & Reel
DRDPB26W-7
SOT-363
3000/Tape & Reel
DRDN005W-7
SOT-363
3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YM
RDxx
Date Code Key Year
RDxx = Product Type Marking Code: RD01 = DRDN010W RD02 = DRDP006W RD03 = DRDNB16W RD04 = DRDNB26W RD05 = DRDPB16W RD06 = DRDPB26W RD07 = DRDN005W YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September
2005
2006
2007
2008
2009
2010
2011
2012
S
T
U
V
W
X
Y
Z
Code Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30573 Rev. 10 - 2
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Sample Applications R2 R1
Relay
Relay
RL
DRDN010W/ DRDN005W
DRDP006W
DRDNB16W
R1
Relay
RL
10kΩ
RL
R2
1kΩ
Application Example: DRDN010W/DRDN005W current sink configuration, bias resistors not included
Application Example: DRDP006W current source configuration, bias resistors not included
Application Example: DRDNB16W current sink configuration with built-in bias resistors
4.7kΩ 10kΩ
220Ω
Relay
1kΩ
RL RL
DRDPB26W
DRDPB16W
DRDNB26W 220Ω
Relay
Relay
RL
4.7kΩ
Application Example: DRDNB26W current sink configuration with built-in bias resistors (low R1)
Application Example: DRDPB16W current source configuration with built-in bias resistors
Application Example: DRDPB26W current source configuration with built-in bias resistors (low R1)
Suggested Pad Layout E
Z
E
Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65
C
G
Y X
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DS30573 Rev. 10 - 2
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