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Double Data Rate Sdram Module

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MEMORY MODULE DDR SDRam 512Mx16-SOP 3D1D8G16TS8466 Double Data Rate SDRam MODULE 8Gbit DDR SDRam organized as 512Mx16, based on 64Mx16 Pin Assignment (Top View) SOP 78 (Pitch : 0.65 mm) Features                 Stack of eight 1Gbit DDR SDRam Organized as 512Mx16bit Power supply: Vdd=2.5 ± 0.2V, Vddq=2.5±0.2V Double-data-rate architecture; two data transfers per clock cycle Bidirectional data strob Differential Clock input (CK and #CK) DLL aligns DQ and DQS transition with CK transition Programmable Read latency 2, 2.5 (clock) Programmable Burst length (2, 4, 8) Programmable Burst Type (sequential and interleave) Edge aligned data output, center aligned data input LDM, UDM for write masking only Auto and self refresh 7.8 us refresh interval (8K/64ms refresh) Available temperature range : 0°C to +70°C -40°C to +85°C Available with screening option for high reliability application (Space, etc …) General description 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 #CS1 #CS2 #CS3 VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDDQ LDQS A13 VDD DNU LDM #WE #CAS #RAS 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 #CS0 #CS7 BA0 BA1 AP/AI0 A0 A1 A2 A3 VDD #CS4 #CS5 #CS6 CKE1 CKE2 CKE3 VSS A4 A5 A6 A7 A8 A9 A11 A12 CKE7 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 CKE0 CK #CK UDM VSS VREF DNU UDQS VSSQ NC DQ8 VDDQ DQ9 DQ10 VSSQ DQ11 DQ12 VDDQ DQ13 DQ14 VSSQ DQ15 VSS CKE4 CKE5 CKE6 FUNCTIONAL Block Diagram The 3D-Plus 3D1D8G16TS8466 is a high-speed highly integrated DDR Synchronous Dynamic RAM containing 8,589,934,592 bits. It is organized with eight banks of 16bit with #CS and CKE. It is particularly well suited for use in high reliability, high performance and high density system applications, such as solid state mass recorder, server or workstation. The 3D1D8G16TS8466 is packaged in a 78 pin SOP. (All other signals are common to the devices) DDR Memory Module 3D1D8G16TS8466 3D Plus SA reserves the right to cancel product or specifications without notice 3DFP-0466-REV 2-Jan 2012 MEMORY MODULE DDR SDRam 512Mx16-SOP 3D1D8G16TS8466 Double Data Rate SDRam MODULE 8Gbit DDR SDRam organized as 512Mx16, based on 64Mx16 Min 11.50 10.40 27.20 13.40 10.85 A A2 D E E1 b e Max 12.20 10.80 27.60 13.80 11.05 0.30 0.65 Dimension (mm) Max. weight : 8.10 gr. DC OPERATING CONDITIONS Parameter Supply Voltage I/O Supply Voltage I/O Reference Voltage I/O Termination Voltage (syst.) Input High Voltage Input Low Voltage . ABSOLUTE MAXIMUM RATINGS Symbol Min Max Unit VDD VDDQ VREF VTT 2.3 2.3 0.49xVDDQ VREF –0.04 2.7 2.7 0.51x VDDQ VREF +0.04 V V V V Voltage on any pin relative to VSS Storage temperature Power dissipation Short circuit current VIH(DC) VIL(DC) VREF +0.15 -0.3 VREF +0.3 VREF -0.15 V V DC Characteristics @ 133MHz Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability 3D1D8G16TS8466 X Parameter Symbol Value Unit VIN, VOUT TSTG PD IOS -0.5 ~ +3.6 -55 ~ +150 2 50 V °C W mA Parameter Operating recharge Current Precharge Power Down Standby Current Precharge Floating Standby Current Symbol Value Unit IDD1 IDD2P IDD2F 273 80 520 mA mA mA X Temperature Range C = 0°C ~ +70°C I = -40°C ~ +85°C S = Specific Quality Level N = Commercial Grade B = Industrial Grade S = Space Grade C = Custom Main Sales Office 3D PLUS FRANCE 408, rue Hélène Boucher ZI. 78532 BUC Cedex USA 2570 Eldorado Parkway Suite 150 Mckinney, TX 75070 Tel : 33 (0)13 0 83 26 50 Fax : 33 (0)1 39 56 25 89 Web : www.3d-plus.com e-mail : [email protected] Tel : (241) 733-8505 Tel : (241) 733-8506 e-mail : [email protected] DISTRIBUTOR 3D PLUS USA, Inc DDR Memory Module 3D1D8G16TS8466 3D Plus SA reserves the right to cancel product or specifications without notice 3DFP-0466-REV 2-Jan 2012