Transcript
AO4425 38V P-Channel MOSFET
General Description
Product Summary
The AO4425 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is ESD protected.
VDS (V) = -38V ID = -14A (VGS = -20V) RDS(ON) < 10mΩ (VGS = -20V) RDS(ON) < 11mΩ (VGS = -10V) ESD Rating: 4000V HBM 100% UIS Tested 100% Rg Tested
SOIC-8 Top View D D
D
Bottom View
D D
G G S
S
S S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage
VGS TA=25°C
Continuous Drain Current A B
TA=25°C Power Dissipation
A
Junction and Storage Temperature Range
Maximum Junction-to-Lead
C
±25
V
ID
-11
IDM
-50
°C
-55 to 150
Symbol
Alpha & Omega Semiconductor, Ltd.
W
2
TJ, TSTG
t 1 10s Steady-State Steady-State
A
3.1
PD
TA=70°C
Thermal Characteristics Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient
Units V
-14
TA=70°C
Pulsed Drain Current
Maximum -38
RθJA RθJL
Typ 26 50 14
Max 40 75 24
Units °C/W °C/W °C/W
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AO4425
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
Conditions
Min
ID=-250µA, VGS=0V
-38 -100 TJ=55°C
-500 ±1
µA
±10
µA
-3.5
V
VDS=VGS ID=-250µA
-2
On state drain current
VGS=-10V, VDS=-5V
-50
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
VGS=-20V, ID=-14A
Reverse Transfer Capacitance Gate resistance
Qgs
Gate Source Charge Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time
Qrr
A 7.7
10 13.5
VGS=-10V, ID=-14A
8.8
11
VDS=-5V, ID=-14A
43
VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg Total Gate Charge Qgd
-2.5
11
TJ=125°C
DYNAMIC PARAMETERS Ciss Input Capacitance
Rg
nA
VDS=0V, VGS=±25V
Gate Threshold Voltage
Crss
Units
VDS=0V, VGS=±20V
VGS(th)
Output Capacitance
Max
V
VDS=-30V, VGS=0V
ID(ON)
Coss
Typ
VGS=-10V, VDS=-20V, ID=-14A
VGS=-10V, VDS=-20V, RL=1.35Ω, RGEN=3Ω IF=-14A, dI/dt=100A/µs
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-14A, dI/dt=100A/µs
0.71
mΩ mΩ S
1
V
4.2
A
3800
pF
560
pF
350
pF
7.5
Ω
63
nC
14.1
nC
16.1
nC
12.4
ns
9.2
ns
97.5
ns
45.5
ns
35
ns nC
33
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. -15 B: Repetitive rating, pulse width limited by junction temperature. -12.8 C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in SOA curve provides a single pulse rating. Rev 3 : Nov. 2010
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4425
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30
30
20
25 20
-4.5V -ID(A)
-ID (A)
VDS=-5V
-20V -10V -5V
25
-4V
15
15
125°C
-3.5V
10
25°C
10
5
5
VGS=-3V 0 0
1
2
3
4
0
5
2
2.5
-VDS (Volts) Fig 1: On-Region Characteristics
3.5
4
4.5
5
-VGS(Volts) Figure 2: Transfer Characteristics
10 Normalized On-Resistance
1.6
VGS=-10V
9 RDS(ON) (mΩ )
3
8 VGS=-20V
7
VGS=-10V ID = -14A
1.4
VGS=-20V ID = -14A
1.2
1
0.8
6 0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
-ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
-15 1.0E+01
20
-12.8
ID=-14A
1.0E+00
125°C -IS (A)
RDS(ON) (mΩ )
1.0E-01 15 125°C
10
1.0E-02 1.0E-03 1.0E-04 25°C
25°C
1.0E-05 1.0E-06
5 4
8
12
16
20
-VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts) Figure 6: Body-Diode Characteristics
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AO4425
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5000
10 VDS=-15V ID=-14A
Ciss
4000 Capacitance (pF)
-VGS (Volts)
8
6
4
3000
2000
2
1000
0
0
Coss Crss
0
10
20
30 40 50 60 -Qg (nC) Figure 7: Gate-Charge Characteristics
100.0
70
0
20 30 -VDS (Volts) Figure 8: Capacitance Characteristics
40
40
10µs RDS(ON) limited
10
TJ(Max)=150°C TA=25°C
100µs 30
1ms Power (W)
-ID (Amps)
10.0 10ms 0.1s
1.0
1s TJ(Max)=150°C TA=25°C
10 10s DC
0.1 0.1
20
1
10
100
0 0.001
0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
-15
10
Zθ JA Normalized Transient Thermal Resistance
0.01
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W
-12.8
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1 Ton Single Pulse
0.01 0.00001
0.0001
T
0.001 0.01 1 10 Pulse 0.1 Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
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