Transcript
AP05N50P RoHS-compliant Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
100% Avalanche Test
D
Fast Switching Characteristic Simple Drive Requirement
G
BVDSS
500V
RDS(ON)
1.4
ID
5.0A
S
Description The AP05N50 provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness.
G
D
S
TO-220(P)
The TO-220 and package is widely preferred for commercial-industrial applications. The good thermal performance and low package cost of the TO-220 Contribute to its wide industry application.
Absolute Maximum Ratings Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25
Continuous Drain Current, V GS @ 10V
5.0
A
ID@TC=100
Continuous Drain Current, V GS @ 10V
2.8
A
18
A
73.5
W
0.59
W/
1
IDM
Pulsed Drain Current
PD@TC=25
Total Power Dissipation Linear Derating Factor 2
EAS
Single Pulse Avalanche Energy
45
mJ
IAR
Avalanche Current
3
A
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
Unit
1.7
/W
62
/W 201022072-1/4
AP05N50P o
Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
500
-
-
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=2.7A
-
-
1.4
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=2.7A
-
2.4
-
S
VDS=500V, VGS=0V
-
-
25
uA
Drain-Source Leakage Current (Tj=125 C)
VDS=400V, VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=3.1A
-
19
30
nC
o
IDSS
Drain-Source Leakage Current (Tj=25 C) o
IGSS
3
V
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=400V
-
4.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
6.3
-
nC
3
td(on)
Turn-on Delay Time
VDD=250V
-
11
-
ns
tr
Rise Time
ID=3.1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=12
-
32
-
ns
tf
Fall Time
RD=80.6
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
985
1580
pF
Coss
Output Capacitance
VDS=25V
-
85
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
3.3
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.5
3.8
Min.
Typ.
Max. Units
-
-
1.5
V
VGS=10V
Source-Drain Diode Symbol VSD
Parameter Forward On Voltage
3
Test Conditions Tj=25
3
, IS=4.5A, VGS=0V
trr
Reverse Recovery Time
IS=3.1A, VGS=0V,
-
300
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
2.6
-
uC
Notes: 1.Pulse width limited by Max. junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25
, IAS=3A.
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4
AP05N50P 5
5
o
T C =25 C
4
ID , Drain Current (A)
ID , Drain Current (A)
4
10V 7 .0V 6 .0V 5 .0 V
T C =150 o C
10V 7.0V 6.0V
3
5.0V 2
3
2
V G = 4.0V 1
1
V G =4.0V 0
0 0
2
4
6
0
8
V DS , Drain-to-Source Voltage (V)
4
8
12
16
20
24
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
Normalized BVDSS (V)
I D =2.7A V G =10V
Normalized RDS(ON)
1.1
1
2
1
0.9
0
0.8 -50
0
50
100
-50
150
o
T j , Junction Temperature ( C)
50
100
150
o
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature 1.5
T j = 150 o C
Normalized VGS(th) (V)
10
IS (A)
0
T j , Junction Temperature ( C )
T j = 25 o C
1
1
0.5
0
0.1 0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4
AP05N50P f=1.0MHz 10000
16
V DS =260V V DS =320V V DS =400V
12
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D =3.1A
8
100
C oss
4
C rss 0
1 0
10
20
30
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
10
ID (A)
100us
1ms
1
o
T c =25 C Single Pulse
10ms 100m 1s DC
0.1 1
10
100
1000
Normalized Thermal Response (Rthjc)
100
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t 0.02
T
0.01
0.01 0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
Single Pulse
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG 10V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
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ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E1
A
E
Millimeters
SYMBOLS
L2
L5
c1
D L4
b1
L3
MIN
NOM
MAX
A
4.25
4.48
4.70
b b1 c c1
0.65
0.80
0.90
1.15
1.38
1.60
0.40
0.50
0.60
1.00
1.20
1.40
E
9.70
10.00
10.40
E1
---
---
11.50
L1
L
c
b
e
----
2.54
----
L
12.70
13.60
14.50
L1
2.60
2.80
3.00
L2
1.00
1.40
1.80
L3
2.6
3.10
3.6
L4
14.70
15.50
16
L5
6.30
6.50
6.70
3.50
3.60
3.70
D
8.40
8.90
9.40
1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220 Part Number
Package Code 05N50P
LOGO YWWSSS Date Code (YWWSSS) Y Last Digit Of The Year WW Week SSS Sequence
