Transcript
AP06P20GJ-HF Preliminary
Advanced Power Electronics Corp.
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Lower Gate Charge
D
Simple Drive Requirement RoHS Compliant & Halogen-Free
G
BVDSS
-200V
RDS(ON)
1.4
ID
-4.7A
S
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
G
D
S
TO-251(J)
The TO-251 package is widely preferred for all commercial-industrial through-hole applications and suited for low voltage applications.
Absolute Maximum Ratings Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-200
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25
Continuous Drain Current, VGS @ 10V
-4.7
A
ID@TC=100
Continuous Drain Current, VGS @ 10V
-3
A
1
IDM
Pulsed Drain Current
-12
A
PD@TC=25
Total Power Dissipation
62.5
W
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
2
/W
110
/W
1 20100316pre
AP06P20GJ-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-200
-
-
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-3A
-
-
1.4
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-2
-
-4
V
gfs
Forward Transconductance
VDS=-10V, ID=-3A
-
3
-
S
IDSS
Drain-Source Leakage Current
VDS=-160V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=-3A
-
17
-
nC
2
V
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-200V
-
3.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
5.5
-
nC
VDS=-100V
-
9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-3A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3
-
24
-
ns
tf
Fall Time
VGS=-10V
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
670
-
pF
Coss
Output Capacitance
VDS=-25V
-
100
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
25
-
pF
Rg
Gate Resistance
f=1.0MHz
-
4.5
-
Min.
Typ.
IS=-3A, VGS=0V
-
-
-1.3
V
IS=-3A, VGS=0V,
-
160
-
ns
dI/dt=-100A/µs
-
1.35
-
uC
Source-Drain Diode Symbol VSD
Parameter 2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes: 1.Pulse width limited Max. junction temperature. 2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP06P20GJ-HF 8
5
-ID , Drain Current (A)
T C =25 o C 6
4
-10V -9.0V -8.0V -7.0V V G = -6.0V
T C = 150 o C 4
-ID , Drain Current (A)
-10V -9.0V -8.0V -7.0V V G =-6.0V
3
2
2
1
0
0
0
4
8
12
16
20
24
0
4
8
12
16
20
24
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
1.2
2.0 1.1
Normalized RDS(ON)
Normalized -BVDSS (V)
ID=-3A V G =-10V
1
1.6
1.2
0.9 0.8
0.8
0.4 -50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( o C)
o
T j , Junction Temperature ( C)
Fig 3. Normalized BV DSS v.s. Junction Temperature
Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4
Normalized -VGS(th) (V)
8
-IS(A)
6
T j =150 o C
T j =25 o C
4
1.2
1.0
0.8
2 0.6
0
0.4 0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP06P20GJ-HF f=1.0MHz
1000
12
800
8
I D = -3A V DS = -160V
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
C iss
600
400 4
200 2
C oss C rss 0
0 0
4
8
12
16
1
20
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
100us
-ID (A)
10 Operation in this area limited by RDS(ON)
1ms 1
10ms 100ms 1s DC
T C =25 o C Single Pulse
Duty factor=0.5
0.2
0.1
0.1 0.05
PDM 0.02
t T
0.01
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1 1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG -10V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
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