Transcript
AP09N70P/R-H RoHS-compliant Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
100% Avalanche Rated
D
BVDSS RDS(ON)
Fast Switching Characteristics Simple Drive Requirement
ID
G
700V 0.85 8.3A
S
Description G AP09N70 series are specially designed as main switching devices for D S universal 90~265VAC off-line AC/DC converter applications. The TO-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. The TO-220 and TO-262 package is widely preferred for all commercialindustrial applications. The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits.
G
D S
TO-220(P)
TO-262(R)
Absolute Maximum Ratings Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
700
V
VGS
Gate-Source Voltage
+30
V
ID@TC=25
Continuous Drain Current, V GS @ 10V
8.3
A
ID@TC=100
Continuous Drain Current, V GS @ 10V
5.2
A
40
A
156
W
32
mJ
1
IDM
Pulsed Drain Current
PD@TC=25
Total Power Dissipation 2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
8
A
EAR
Repetitive Avalanche Energy
32
mJ
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol
Parameter
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
0.8
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
/W
Data & specifications subject to change without notice
1 200912283
AP09N70P/R-H o
Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
700
-
-
VGS=10V, ID=4A
-
-
0.85
VGS=0V, ID=250uA 3
Max. Units V
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=4.5A
-
4.5
-
S
IDSS
Drain-Source Leakage Current
VDS=600V, VGS=0V
-
-
25
uA
Drain-Source Leakage Current (T j=125 C) VDS=480V, VGS=0V
-
-
500
uA
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
ID=9A
-
44
-
nC
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
11
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
12
-
nC
3
td(on)
Turn-on Delay Time
VDD=300V
-
19
-
ns
tr
Rise Time
ID=9A
-
21
-
ns
td(off)
Turn-off Delay Time
RG=10
-
56
-
ns
tf
Fall Time
RD=34
-
24
-
ns
Ciss
Input Capacitance
VGS=0V
-
2660
-
pF
Coss
Output Capacitance
VDS=25V
-
170
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
10
-
pF
Min.
Typ.
-
-
8.3
A
-
-
40
A
-
-
1.5
V
VGS=10V
Source-Drain Diode Symbol IS ISM VSD
Parameter
Test Conditions VD=VG=0V , VS=1.5V
Continuous Source Current ( Body Diode ) 1
Pulsed Source Current ( Body Diode )
Forward On Voltage
3
Tj=25
, IS=9A, VGS=0V
Max. Units
Notes: 1.Pulse width limited by Maximum junction temperature. o
2.Starting Tj=25 C , VDD=50V , L=1mH , RG=25
, IAS=8A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP09N70P/R-H 10
10
o
T C =25 C
10V 6.0V 5.0V 4.5V
8
ID , Drain Current (A)
8
ID , Drain Current (A)
T C =150 o C
10V 6.0V 5.0V
6
4
4.5V
6
4
4.0V 2
2
V G = 3 .5 V
4.0V V G = 3 .5 V 0
0
0
3
6
9
0
12
5
10
15
20
25
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
Normalized RDS(ON)
Normalized BVDSS (V)
I D =4A V G =10V 1.1
1
2
1
0.9
0
0.8 -50
0
50
100
-50
150
0
50
100
150
o
T j , Junction Temperature ( o C)
T j , Junction Temperature ( C )
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature 5
100
4
T j = 150 o C
VGS(th) (V)
IS (A)
10
o T j = 25 C
3
1 2
1
0.1 0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP09N70P/R-H f=1.0MHz 10000
16
C iss
12
V DS =320V V DS =400V V DS =480V
8
C (pF)
VGS , Gate to Source Voltage (V)
I D =9A
C oss 100
C rss
4
0
1 0
20
40
60
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
Operation in this area limited by RDS(ON) 10
ID (A)
100us
1ms 1
10ms 100ms DC
o
T c =25 C Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t 0.02
T 0.01
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1 1
10
100
1000
10000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG 10V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
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